All Stories

  1. Pt/β-Ga2O3 Schottky devices enabling 60 Hz half-wave rectification for power-efficient pixel display

    Article • Applied Physics Letters, November 2024, American Institute of Physics

    Seongil Im

  2. Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport

    Article • Small, August 2019, Wiley

    Seongil Im

  3. Seamless MoTe 2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

    Article • Advanced Optical Materials, June 2019, Wiley

    Seongil Im

  4. Enhanced device performances of WSe2–MoS2 van der Waals junction p–n diode by fluoropolymer encapsulation

    Article • Journal of Materials Chemistry C, January 2015, Royal Society of Chemistry

    Seongil Im

  5. Trap density probing on top-gate MoS2nanosheet field-effect transistors by photo-excited charge collection spectroscopy

    Article • Nanoscale, January 2015, Royal Society of Chemistry

    Seongil Im

  6. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO

    Article • Nanoscale, January 2015, Royal Society of Chemistry

    Seongil Im

  7. Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation

    Article • Journal of Materials Chemistry C, August 2014, Royal Society of Chemistry

    Seongil Im

  8. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

    Article • Physical Chemistry Chemical Physics, July 2014, Royal Society of Chemistry

    Seongil Im

  9. NiOx Schottky-gated ZnO nanowire metal–semiconductor field effect transistor: fast logic inverter and photo-detector

    Article • Journal of Materials Chemistry C, January 2014, Royal Society of Chemistry

    Seongil Im

  10. MoS2 nanosheet channel and guanine DNA-base charge injection layer for high performance memory transistors

    Article • Journal of Materials Chemistry C, January 2014, Royal Society of Chemistry

    Seongil Im

  11. Manipulating ZnO nanowires for field-effect device integration by optical-fiber grip coated with thermoplastic copolymer

    Article • Journal of Materials Chemistry C, January 2013, Royal Society of Chemistry

    Seongil Im

  12. Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

    Article • Journal of Materials Chemistry C, January 2013, Royal Society of Chemistry

    Seongil Im

  13. Sensing extremely limited H2 contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor

    Article • Nanoscale, January 2013, Royal Society of Chemistry

    Seongil Im

  14. A ZnO nanowire-based photo-inverter with pulse-induced fast recovery

    Article • Nanoscale, January 2013, Royal Society of Chemistry

    Seongil Im