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  1. Pt/β-Ga2O3 Schottky devices enabling 60 Hz half-wave rectification for power-efficient pixel display
  2. Impact of H‐Doping on n‐Type TMD Channels for Low‐Temperature Band‐Like Transport
  3. Seamless MoTe 2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection
  4. Enhanced device performances of WSe2–MoS2 van der Waals junction p–n diode by fluoropolymer encapsulation
  5. Trap density probing on top-gate MoS2nanosheet field-effect transistors by photo-excited charge collection spectroscopy
  6. Wafer-scale single-domain-like graphene by defect-selective atomic layer deposition of hexagonal ZnO
  7. Top and back gate molybdenum disulfide transistors coupled for logic and photo-inverter operation
  8. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode
  9. NiOx Schottky-gated ZnO nanowire metal–semiconductor field effect transistor: fast logic inverter and photo-detector
  10. MoS2 nanosheet channel and guanine DNA-base charge injection layer for high performance memory transistors
  11. Manipulating ZnO nanowires for field-effect device integration by optical-fiber grip coated with thermoplastic copolymer
  12. Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors
  13. Sensing extremely limited H2 contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor
  14. A ZnO nanowire-based photo-inverter with pulse-induced fast recovery