All Stories

  1. Magneto-optical Kerr effect spectroscopy study of 2H−MoS2

    Article • Physical Review B, September 2024, American Physical Society (APS)

    Sandip Ghosh

  2. Polar magneto-optical Kerr effect spectroscopy with a microscope arrangement for studies on 2D materials

    Article • Review of Scientific Instruments, August 2024, American Institute of Physics

    Sandip Ghosh

  3. Elucidating the role of oxygen vacancies on the electrical conductivity of β-Ga2O3 single-crystals

    Article • Applied Physics Letters, October 2023, American Institute of Physics

    Sandip Ghosh

  4. Landé g Factor of Excitons from Circularly Polarized Low-Field Magnetomodulated Reflectance Spectroscopy: Application to Bulk

    Article • Physical Review Applied, June 2023, American Physical Society (APS)

    Sandip Ghosh

  5. Unraveling the excitonic states in bulk 2H−MoS2 v...

    Article • June 2023, American Physical Society (APS)

    Sandip Ghosh

  6. Electroreflectance spectroscopy of few-layer MoS2 : Issues related to A1s exciton subspecies, exciton binding energy, and inter-layer exciton

    Article • Journal of Applied Physics, December 2022, American Institute of Physics

    Sandip Ghosh

  7. An optical setup for doing photolithography on microscopic samples of arbitrary shape and size

    Article • Review of Scientific Instruments, February 2022, American Institute of Physics

    Sandip Ghosh

  8. Interlayer and excited-state exciton transitions in bulk 2H−MoS2

    Article • Physical Review B, December 2020, American Physical Society (APS)

    Sandip Ghosh

  9. Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

    Article • Nano Letters, February 2020, American Chemical Society (ACS)

    Sandip Ghosh

  10. One-Dimensional Behavior of Imidazolium Lead Iodide

    Article • The Journal of Physical Chemistry C, June 2019, American Chemical Society (ACS)

    Professor Deepa Khushalani, Sandip Ghosh

  11. Growth, structural and optical characterization of wurtzite GaP nanowires

    Article • Nanotechnology, April 2019, Institute of Physics Publishing

    Sandip Ghosh

  12. Signatures of self-trapping of trions in monolayer MoS2

    Article • Journal of Physics D Applied Physics, September 2018, Institute of Physics Publishing

    Sandip Ghosh

  13. Anomalous behavior of the excited state of the A exciton in bulk WS2

    Article • Physical Review B, January 2018, American Physical Society (APS)

    Sandip Ghosh

  14. Reconfiguring crystal and electronic structures of MoS2 by substitutional doping

    Article • Nature Communications, January 2018, Springer Science + Business Media

    Sandip Ghosh

  15. Evidence for two distinct defect related luminescence features in monolayer MoS2

    Article • Applied Physics Letters, September 2016, American Institute of Physics

    Sandip Ghosh

  16. Exciton binding energy in bulk MoS2: A reassessment

    Article • Applied Physics Letters, March 2016, American Institute of Physics

    Sandip Ghosh

  17. Phonon induced luminescence decay in monolayer MoS2 on SiO2/Si substrates

    Article • Applied Physics Letters, December 2015, American Institute of Physics

    Sandip Ghosh

  18. H-point exciton transitions in bulk MoS2

    Article • Applied Physics Letters, May 2015, American Institute of Physics

    Sandip Ghosh

  19. Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases

    Article • Journal of Applied Physics, February 2015, American Institute of Physics

    Sandip Ghosh

  20. Absorption spectra of CdSe–ZnS core–shell quantum dots at high photon energies: Experiment and modeling

    Article • Physica E Low-dimensional Systems and Nanostructures, November 2014, Elsevier

    Sandip Ghosh

  21. Angle of incidence averaging in reflectance measurements with optical microscopes for studying layered two-dimensional materials

    Article • Review of Scientific Instruments, July 2014, American Institute of Physics

    Sandip Ghosh

  22. Origin of additional spectral features in modulated reflectance spectra of 2-dimensional semiconductor systems

    Article • Journal of Applied Physics, March 2014, American Institute of Physics

    Sandip Ghosh

  23. A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures

    Article • Journal of Physics D Applied Physics, January 2014, Institute of Physics Publishing

    Sandip Ghosh

  24. Polarization of emission from non-polar III-nitride quantum wells: the influence of confinement

    Article • Journal of Physics D Applied Physics, December 2013, Institute of Physics Publishing

    Sandip Ghosh

  25. Large exciton g-factors in anisotropically strained A-plane GaN film measured using magneto-optical Kerr effect spectroscopy

    Article • Applied Physics Letters, July 2013, American Institute of Physics

    Sandip Ghosh

  26. Magneto-optical Kerr effect spectroscopy based study of Landé g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fields

    Article • Journal of Applied Physics, June 2013, American Institute of Physics

    Sandip Ghosh

  27. Optimum excitation photon energy for CdSe–ZnS core–shell quantum dot based luminescence imaging

    Article • Journal of Physics D Applied Physics, April 2012, Institute of Physics Publishing

    Sandip Ghosh

  28. Note: Improved sensitivity of photoreflectance measurements with a combination of dual detection and electronic compensation

    Article • Review of Scientific Instruments, April 2012, American Institute of Physics

    Sandip Ghosh

  29. A mirror based polar magneto-optical Kerr effect spectroscopy arrangement

    Article • Review of Scientific Instruments, December 2011, American Institute of Physics

    Sandip Ghosh

  30. Anisotropic structural and optical properties of a-plane (112¯) AlInN nearly-lattice-matched to GaN

    Article • Applied Physics Letters, May 2011, American Institute of Physics

    Sandip Ghosh

  31. Importance of strain for green emitters based on (In, Ga)N films of non‐polar orientation

    Article • physica status solidi (b), February 2011, Wiley

    Sandip Ghosh

  32. A twisted periscope arrangement for transporting elliptically polarized light without change in its polarization state

    Article • Review of Scientific Instruments, December 2010, American Institute of Physics

    Sandip Ghosh

  33. Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

    Article • Applied Physics Letters, August 2010, American Institute of Physics

    Sandip Ghosh

  34. Are AlN and GaN substrates useful for the growth of non‐polar nitride films for UV emission? The oscillator strength perspective

    Article • physica status solidi (b), May 2009, Wiley

    Sandip Ghosh

  35. Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum Dots

    Article • Journal of Nanoelectronics and Optoelectronics, December 2008, American Scientific Publishers

    Sandip Ghosh

  36. Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer

    Article • Nanotechnology, November 2008, Institute of Physics Publishing

    Sandip Ghosh

  37. Electroreflectance lineshapes in multilayered semiconductor structures: Influence of the linear electro-optic effect

    Article • Physical Review B, November 2008, American Physical Society (APS)

    Sandip Ghosh

  38. Optical polarization properties of interband transitions in strained group-III-nitride alloy films on GaN substrates with nonpolar orientation

    Article • Applied Physics Letters, August 2008, American Institute of Physics

    Sandip Ghosh

  39. Narrow‐band photodetection based onM‐plane GaN films

    Article • phys stat sol (a), May 2008, Wiley

    Sandip Ghosh

  40. Optical polarization properties of M-plane GaN films investigated by transmittance anisotropy spectroscopy

    Article • Applied Physics Letters, December 2007, American Institute of Physics

    Sandip Ghosh

  41. Determination of InN–GaN heterostructure band offsets from internal photoemission measurements

    Article • Applied Physics Letters, October 2007, American Institute of Physics

    Sandip Ghosh

  42. The role of hydrostatic stress in determining the bandgap of InN epilayers

    Article • Applied Physics Letters, September 2007, American Institute of Physics

    Sandip Ghosh

  43. Polarization-dependent beam switch based on an M-plane GaN∕AlN distributed Bragg reflector

    Article • Applied Physics Letters, June 2007, American Institute of Physics

    Sandip Ghosh

  44. Characteristics of high responsivity 8.5μm InGaAs/InP QWIPs grown by metalorganic vapour phase epitaxy

    Article • Infrared Physics & Technology, April 2007, Elsevier

    Sandip Ghosh

  45. Very narrow-band ultraviolet photodetection based on strained M-plane GaN films

    Article • Applied Physics Letters, February 2007, American Institute of Physics

    Sandip Ghosh

  46. Electronic band structure of wurtzite InN around the fundamental gap in the presence of biaxial strain

    Article • phys stat sol (a), February 2007, Wiley

    Sandip Ghosh

  47. Polarized photoluminescence and absorption in A-plane InN films

    Article • Applied Physics Letters, October 2006, American Institute of Physics

    Sandip Ghosh

  48. Optical polarization anisotropy in strained A‐plane GaN films on R‐plane sapphire

    Article • physica status solidi (b), June 2006, Wiley

    Sandip Ghosh

  49. Polarized photovoltage spectroscopy study of InAs∕GaAs(001) quantum dot ensembles

    Article • Applied Physics Letters, November 2005, American Institute of Physics

    Sandip Ghosh

  50. Wavelength modulation spectroscopy using novel mechanical light chopper blade designs

    Article • Review of Scientific Instruments, August 2005, American Institute of Physics

    Sandip Ghosh

  51. Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire

    Article • Journal of Applied Physics, July 2005, American Institute of Physics

    Sandip Ghosh

  52. Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy

    Article • IEEE Photonics Technology Letters, August 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Sandip Ghosh

  53. Electronic Band Structure of Strained C- and M-Plane GaN Films Investigated by Polarized Photoreflectance Spectroscopy

    Article • physica status solidi (b), December 2002, Wiley

    Sandip Ghosh

  54. Strained M-plane GaN for the realization of polarization-sensitive photodetectors

    Article • Applied Physics Letters, October 2002, American Institute of Physics

    Sandip Ghosh

  55. Comparative Study of the Electronic Band Structure of StrainedC-plane andM-plane GaN Films by Polarized Photoreflectance Spectroscopy

    Article • phys stat sol (a), July 2002, Wiley

    Sandip Ghosh

  56. Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2

    Article • Applied Physics Letters, January 2002, American Institute of Physics

    Sandip Ghosh

  57. Electronic band structure of wurtzite GaN under biaxial strain in theMplane investigated with photoreflectance spectroscopy

    Article • Physical Review B, January 2002, American Physical Society (APS)

    Sandip Ghosh

  58. Recent developments in spectroscopy of quantum structures

    Article • Materials Science in Semiconductor Processing, December 2001, Elsevier

    Sandip Ghosh

  59. Photoreflectance line shape of excitonic transitions analyzed with a redefined set of fitting parameters

    Article • Journal of Applied Physics, July 2001, American Institute of Physics

    Sandip Ghosh

  60. Photoreflectance line shape symmetry and quantum-well ground-state exciton energy in vertical-cavity surface-emitting laser structures

    Article • Applied Physics Letters, May 2001, American Institute of Physics

    Sandip Ghosh

  61. Nondestructive spectroscopic characterisation of visible resonant cavity light emitting diode structures

    Article • IEE Proceedings - Optoelectronics, February 2001, the Institution of Engineering and Technology (the IET)

    Sandip Ghosh

  62. Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium–tin–oxide-coated glass electrode in soft contact mode

    Article • Review of Scientific Instruments, January 2001, American Institute of Physics

    Sandip Ghosh

  63. Resonances between the cavity mode and five excitonic transitions in an InxGa1−xAs/GaAs/AlAs/AlGaAs vertical-cavity surface-emitting laser structure using photomodulated reflectance

    Article • Journal of Applied Physics, November 2000, American Institute of Physics

    Sandip Ghosh

  64. Edge-emission electroluminescence study of as-grown vertical-cavity surface-emitting laser structures

    Article • Journal of Applied Physics, August 2000, American Institute of Physics

    Sandip Ghosh

  65. Spectroscopic study of self-organized quantum dot like structures in Ga–In–P superlattices on (311) GaAs

    Article • Journal of Applied Physics, March 1999, American Institute of Physics

    Sandip Ghosh

  66. Spectroscopic study of Ga-In-P based self-organized lateral superlattices

    Article • Semiconductor Science and Technology, January 1999, Institute of Physics Publishing

    Sandip Ghosh

  67. Contactless electro-reflectance study of interdiffusion in heat-treated single quantum wells

    Article • Journal of Physics Condensed Matter, November 1998, Institute of Physics Publishing

    Sandip Ghosh

  68. Polarization anisotropy in room temperature contactless electroreflectance spectrum of self-organized lateral compositional superlattices

    Article • Superlattices and Microstructures, August 1998, Elsevier

    Sandip Ghosh

  69. Polarization anisotropy of sub-band gap oscillatory features in contactless electroreflectance spectrum of InxGa1−xP layers grown on GaAs (001) substrates

    Article • Journal of Applied Physics, May 1998, American Institute of Physics

    Sandip Ghosh

  70. Photoreflectance spectroscopy with white light pump beam

    Article • Review of Scientific Instruments, March 1998, American Institute of Physics

    Sandip Ghosh

  71. Application of a Fourier transform based filtering technique to improve signal-to-noise ratio in modulation spectroscopy experiments

    Article • Review of Scientific Instruments, August 1997, American Institute of Physics

    Sandip Ghosh

  72. Interference effects in photoreflectance and contactless electroreflectance spectra of CdTe films grown on Si substrate

    Article • Journal of Applied Physics, May 1997, American Institute of Physics

    Sandip Ghosh

  73. Double AC photoreflectance spectroscopy of semiconductors

    Article • IEEE Journal of Selected Topics in Quantum Electronics, January 1995, Institute of Electrical & Electronics Engineers (IEEE)

    Sandip Ghosh