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  1. COMSOL simulation of a new generation of SiGe heterojunction bipolar transistor (HBT) integrated in a BiCMOS 55nm technology

    Article • January 2021, American Institute of Physics

    Saida LATRECHE, Abdelaaziz Boulgheb, Lachkhab Chems El Ghizlane

  2. A new approach of power electronic design using a nonlinear average model

    Article • COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, November 2012, Emerald

    Saida LATRECHE