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  1. (Invited) MOCVD Growth of Smooth and Uniform N-Polar AlN Films on AlN Bulk Substrates

    Article • ECS Meeting Abstracts, November 2025, The Electrochemical Society

    Dr. Rafael Dalmau

  2. Mapping Analysis of Crystalline Perfection and UV‐C Transparency of 2‐in. Aluminum Nitride Substrates Grown by Physical Vapor Transport

    Article • physica status solidi (b), December 2023, Wiley

    Dr. Rafael Dalmau

  3. High p-conductivity in AlGaN enabled by polarization field engineering

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Dr. Rafael Dalmau

  4. (Invited) Deep Level Defects in AlN Studied By UV-Visible Spectroscopy

    Article • ECS Meeting Abstracts, October 2022, The Electrochemical Society

    Dr. Rafael Dalmau

  5. (Invited) Deep Level Defects in AlN Studied By UV-Visible Spectroscopy

    Article • ECS Transactions, September 2022, The Electrochemical Society

    Dr. Rafael Dalmau

  6. (Invited) Complex Relative Permittivity of UV-C Transparent AlN

    Article • ECS Meeting Abstracts, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  7. Prismatic Slip in AlN Crystals Grown By PVT

    Article • ECS Meeting Abstracts, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  8. (Invited) Complex Relative Permittivity of UV-C Transparent AlN

    Article • ECS Transactions, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  9. Prismatic Slip in AlN Crystals Grown By PVT

    Article • ECS Transactions, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  10. (Invited) Insights into the UV-C Optical Absorption of AlN Substrates Grown by PVT

    Article • ECS Meeting Abstracts, November 2020, The Electrochemical Society

    Dr. Rafael Dalmau

  11. (Invited) Insights into the UV-C Optical Absorption of AlN Substrates Grown by PVT

    Article • ECS Transactions, September 2020, The Electrochemical Society

    Dr. Rafael Dalmau

  12. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

    Article • Journal of Crystal Growth, September 2020, Elsevier

    Dr. Rafael Dalmau

  13. (Invited) X-Ray Metrology of AlN Single Crystal Substrates

    Article • ECS Meeting Abstracts, September 2019, The Electrochemical Society

    Dr. Rafael Dalmau

  14. Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

    Article • AIP Advances, August 2019, American Institute of Physics

    Dr. Rafael Dalmau, Dr Zhenqiang Ma, Mr Sang June Cho

  15. (Invited) X-Ray Metrology of AlN Single Crystal Substrates

    Article • ECS Transactions, July 2019, The Electrochemical Society

    Dr. Rafael Dalmau

  16. (Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

    Article • ECS Transactions, July 2018, The Electrochemical Society

    Dr. Rafael Dalmau

  17. (Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

    Article • ECS Meeting Abstracts, July 2018, The Electrochemical Society

    Dr. Rafael Dalmau

  18. 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

    Article • Applied Physics Letters, July 2018, American Institute of Physics

    Dr. Rafael Dalmau

  19. High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Rafael Dalmau

  20. 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

    Article • Applied Physics Letters, February 2018, American Institute of Physics

    Dr. Rafael Dalmau

  21. (Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

    Article • ECS Meeting Abstracts, September 2017, The Electrochemical Society

    Dr. Rafael Dalmau

  22. (Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

    Article • ECS Transactions, August 2017, The Electrochemical Society

    Dr. Rafael Dalmau

  23. Single crystal AlN substrates for AlGaN-based UV optoelectronics

    Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Rafael Dalmau

  24. High-temperature electromechanical characterization of AlN single crystals

    Article • IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Rafael Dalmau

  25. Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

    Article • Journal of Electronic Materials, January 2014, Springer Science + Business Media

    Dr. Rafael Dalmau

  26. Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr. Rafael Dalmau

  27. Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

    Article • Applied Physics Express, November 2012, Institute of Physics Publishing

    Dr. Rafael Dalmau

  28. Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

    Article • Applied Physics Express, May 2012, Institute of Physics Publishing

    Dr. Rafael Dalmau

  29. On the origin of the 265 nm absorption band in AlN bulk crystals

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Dr. Rafael Dalmau

  30. Impact of gallium supersaturation on the growth of N-polar GaN

    Article • physica status solidi c, June 2011, Wiley

    Dr. Rafael Dalmau

  31. Ni/Au Schottky diodes on AlxGa1-xN (0.7

    Article • physica status solidi c, June 2011, Wiley

    Dr. Rafael Dalmau

  32. Characterization of dislocation arrays in AlN single crystals grown by PVT

    Article • phys stat sol (a), May 2011, Wiley

    Dr. Rafael Dalmau

  33. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

    Article • physica status solidi c, May 2011, Wiley

    Dr. Rafael Dalmau

  34. 265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

    Article • January 2011, Optical Society of America (OSA)

    Dr. Rafael Dalmau

  35. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

    Article • phys stat sol (a), January 2010, Wiley

    Dr. Rafael Dalmau

  36. AlN Bulk Crystal Growth by Physical Vapor Transport

    Article • January 2010, Springer Science + Business Media

    Dr. Rafael Dalmau

  37. Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

    Article • January 2010, The Electrochemical Society

    Dr. Rafael Dalmau

  38. Growth of highly resistive Ga-polar GaN by LP-MOVPE

    Article • physica status solidi c, June 2007, Wiley

    Dr. Rafael Dalmau

  39. Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

    Article • October 2006, CrossRef Test Account

    Dr. Rafael Dalmau

  40. Characterization of bulk grown GaN and AlN single crystal materials

    Article • Journal of Crystal Growth, January 2006, Elsevier

    Dr. Rafael Dalmau

  41. Sublimation Growth of AlN Crystals

    Article • January 2005, Elsevier

    Dr. Rafael Dalmau

  42. Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds

    Article • MRS Proceedings, January 2004, Cambridge University Press

    Dr. Rafael Dalmau

  43. Crucible Selection in AlN Bulk Crystal Growth

    Article • MRS Proceedings, January 2003, Cambridge University Press

    Dr. Rafael Dalmau

  44. Growth of AlN bulk crystals from the vapor phase

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Dr. Rafael Dalmau