All Stories

  1. High p-conductivity in AlGaN enabled by polarization field engineering

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Dr. Rafael Dalmau

  2. (Invited) Deep Level Defects in AlN Studied By UV-Visible Spectroscopy

    Article • ECS Meeting Abstracts, October 2022, The Electrochemical Society

    Dr. Rafael Dalmau

  3. (Invited) Deep Level Defects in AlN Studied By UV-Visible Spectroscopy

    Article • ECS Transactions, September 2022, The Electrochemical Society

    Dr. Rafael Dalmau

  4. (Invited) Complex Relative Permittivity of UV-C Transparent AlN

    Article • ECS Meeting Abstracts, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  5. Prismatic Slip in AlN Crystals Grown By PVT

    Article • ECS Meeting Abstracts, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  6. (Invited) Complex Relative Permittivity of UV-C Transparent AlN

    Article • ECS Transactions, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  7. Prismatic Slip in AlN Crystals Grown By PVT

    Article • ECS Transactions, October 2021, The Electrochemical Society

    Dr. Rafael Dalmau

  8. (Invited) Insights into the UV-C Optical Absorption of AlN Substrates Grown by PVT

    Article • ECS Meeting Abstracts, November 2020, The Electrochemical Society

    Dr. Rafael Dalmau

  9. (Invited) Insights into the UV-C Optical Absorption of AlN Substrates Grown by PVT

    Article • ECS Transactions, September 2020, The Electrochemical Society

    Dr. Rafael Dalmau

  10. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas

    Article • Journal of Crystal Growth, September 2020, Elsevier

    Dr. Rafael Dalmau

  11. (Invited) X-Ray Metrology of AlN Single Crystal Substrates

    Article • ECS Meeting Abstracts, September 2019, The Electrochemical Society

    Dr. Rafael Dalmau

  12. Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs

    Article • AIP Advances, August 2019, American Institute of Physics

    Dr. Rafael Dalmau, Dr Zhenqiang Ma, Mr Sang June Cho

  13. (Invited) X-Ray Metrology of AlN Single Crystal Substrates

    Article • ECS Transactions, July 2019, The Electrochemical Society

    Dr. Rafael Dalmau

  14. (Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

    Article • ECS Transactions, July 2018, The Electrochemical Society

    Dr. Rafael Dalmau

  15. (Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

    Article • ECS Meeting Abstracts, July 2018, The Electrochemical Society

    Dr. Rafael Dalmau

  16. 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection

    Article • Applied Physics Letters, July 2018, American Institute of Physics

    Dr. Rafael Dalmau

  17. High Quality AlN Single Crystal Substrates for AlGaN-Based Devices

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Dr. Rafael Dalmau

  18. 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

    Article • Applied Physics Letters, February 2018, American Institute of Physics

    Dr. Rafael Dalmau

  19. (Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

    Article • ECS Meeting Abstracts, September 2017, The Electrochemical Society

    Dr. Rafael Dalmau

  20. (Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

    Article • ECS Transactions, August 2017, The Electrochemical Society

    Dr. Rafael Dalmau

  21. Single crystal AlN substrates for AlGaN-based UV optoelectronics

    Article • July 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Rafael Dalmau

  22. High-temperature electromechanical characterization of AlN single crystals

    Article • IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Dr. Rafael Dalmau

  23. Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation

    Article • Journal of Electronic Materials, January 2014, Springer Science + Business Media

    Dr. Rafael Dalmau

  24. Defect Generation Mechanisms in PVT-Grown AlN Single Crystal Boules

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Dr. Rafael Dalmau

  25. Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

    Article • Applied Physics Express, November 2012, Institute of Physics Publishing

    Dr. Rafael Dalmau

  26. Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

    Article • Applied Physics Express, May 2012, Institute of Physics Publishing

    Dr. Rafael Dalmau

  27. On the origin of the 265 nm absorption band in AlN bulk crystals

    Article • Applied Physics Letters, May 2012, American Institute of Physics

    Dr. Rafael Dalmau

  28. Impact of gallium supersaturation on the growth of N-polar GaN

    Article • physica status solidi c, June 2011, Wiley

    Dr. Rafael Dalmau

  29. Ni/Au Schottky diodes on AlxGa1-xN (0.7

    Article • physica status solidi c, June 2011, Wiley

    Dr. Rafael Dalmau

  30. Characterization of dislocation arrays in AlN single crystals grown by PVT

    Article • physica status solidi (a), May 2011, Wiley

    Dr. Rafael Dalmau

  31. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

    Article • physica status solidi c, May 2011, Wiley

    Dr. Rafael Dalmau

  32. 265 nm Light Emitting Diodes on AlN Single Crystal Substrates: Growth and Characterization

    Article • January 2011, Optical Society of America (OSA)

    Dr. Rafael Dalmau

  33. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

    Article • physica status solidi (a), January 2010, Wiley

    Dr. Rafael Dalmau

  34. AlN Bulk Crystal Growth by Physical Vapor Transport

    Article • January 2010, Springer Science + Business Media

    Dr. Rafael Dalmau

  35. Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

    Article • January 2010, The Electrochemical Society

    Dr. Rafael Dalmau

  36. Growth of highly resistive Ga-polar GaN by LP-MOVPE

    Article • physica status solidi c, June 2007, Wiley

    Dr. Rafael Dalmau

  37. Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates

    Article • October 2006, CrossRef Test Account

    Dr. Rafael Dalmau

  38. Characterization of bulk grown GaN and AlN single crystal materials

    Article • Journal of Crystal Growth, January 2006, Elsevier

    Dr. Rafael Dalmau

  39. Sublimation Growth of AlN Crystals

    Article • January 2005, Elsevier

    Dr. Rafael Dalmau

  40. Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds

    Article • MRS Proceedings, January 2004, Cambridge University Press

    Dr. Rafael Dalmau

  41. Crucible Selection in AlN Bulk Crystal Growth

    Article • MRS Proceedings, January 2003, Cambridge University Press

    Dr. Rafael Dalmau

  42. Growth of AlN bulk crystals from the vapor phase

    Article • MRS Proceedings, January 2001, Cambridge University Press

    Dr. Rafael Dalmau