All Stories

  1. Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

    Article • Applied Physics Letters, March 2016, American Institute of Physics

    Prashanth Paramahans Manik

  2. Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers

    Article • Applied Physics Express, April 2015, Japan Society of Applied Physics

    Prashanth Paramahans Manik

  3. Indium tin oxide (ITO) and Al-doped ZnO (AZO) interfacial layers for Ohmic contacts on n-type Germanium

    Article • June 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Prashanth Paramahans Manik

  4. Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts

    Article • Journal of Applied Physics, June 2013, American Institute of Physics

    Prashanth Paramahans Manik

  5. Contact Resistance Study of Pt, Ni and Au on La0.7Sr0.3MnO3 (LSMO)/Si for Heterojunction Device Applications

    Article • MRS Proceedings, January 2013, Cambridge University Press

    Prashanth Paramahans Manik

  6. Using ZnO as an interlayer between n-type Germanium and Metal for forming low resistance contacts

    Article • Applied Physics Letters, October 2012, American Institute of Physics

    Prashanth Paramahans Manik

  7. ZnO as an interfacial layer for MIS ohmic contacts on n-type Germanium, Silicon and Silicon:Carbon

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prashanth Paramahans Manik

  8. Nanocrystal-based Ohmic contacts on n and p-type germanium

    Article • Applied Physics Letters, April 2012, American Institute of Physics

    Prashanth Paramahans Manik