All Stories

  1. Subharmonic Injection Locking for Phase and Frequency Control of RTD-Based THz Oscillator

    Article • IEEE Transactions on Terahertz Science and Technology, March 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  2. Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers

    Article • CrystEngComm, January 2020, Royal Society of Chemistry

    Nils Weimann

  3. Transmitarray Element Design for Subharmonic Injection-locked RTD Oscillators in THz Band

    Article • December 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  4. A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT

    Article • October 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  5. n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions

    Article • physica status solidi (b), September 2019, Wiley

    Nils Weimann

  6. A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT

    Article • September 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  7. Broadband Detection capability of a Triple Barrier Resonant Tunneling Diode

    Article • July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  8. Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors

    Article • Microelectronic Engineering, July 2019, Elsevier

    Nils Weimann

  9. Experimental evidence for the separation of thermally excited bipolar charge carries within a p-n junction: A new approach to thermoelectric materials and generators

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Nils Weimann

  10. Characterization of the Effective Tunneling Time and Phase Relaxation Time in Triple-Barrier Resonant Tunneling Diodes

    Article • May 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  11. NiCr resistors for terahertz applications in an InP DHBT process

    Article • Microelectronic Engineering, March 2019, Elsevier

    Nils Weimann

  12. Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antenna

    Article • March 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  13. Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates

    Article • CrystEngComm, January 2019, Royal Society of Chemistry

    Nils Weimann

  14. Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires

    Article • physica status solidi (a), November 2018, Wiley

    Nils Weimann

  15. A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology

    Article • IEEE Microwave and Wireless Components Letters, November 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  16. Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz

    Article • IEEE Transactions on Electron Devices, September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  17. A Hetero-Integrated W-Band Transmitter Module in InP-on-BiCMOS Technology

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  18. An Ultra-Broadband Low-Noise Distributed Amplifier in InP DHBT Technology

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  19. An Ultra-broadband Low-Noise Distributed Amplifier in InP DHBT Technology

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  20. Highly Efficient D-Band Fundamental Frequency Source Based on InP-DHBT Technology

    Article • September 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  21. A 220-325 GHz High-Isolation SPDT Switch in InP DHBT Technology

    Article • Electronics Letters, August 2018, the Institution of Engineering and Technology (the IET)

    Md Tanjil Shivan, Nils Weimann

  22. Millimeter-wave Signal Generation and Detection via the same Triple Barrier RTD and on-chip Antenna

    Article • July 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  23. EM simulation assisted parameter extraction for transferred-substrate InP HBT modeling

    Article • International Journal of Microwave and Wireless Technologies, May 2018, Cambridge University Press

    Nils Weimann

  24. A 95 GHz bandwidth 12 dBm output power distributed amplifier in InP-DHBT technology for optoelectronic applications

    Article • March 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  25. Polarity- and Site-Controlled Metal Organic Vapor Phase Epitaxy of 3D-GaN on Si(111)

    Article • physica status solidi (b), January 2018, Wiley

    Nils Weimann

  26. Noise modeling of transferred-substrate InP-DHBTs

    Article • November 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  27. EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

    Article • October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  28. An active balanced up-converter module in InP-on-BiCMOS technology

    Article • June 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  29. Flip-Chip Approach for 500 GHz Broadband Interconnects

    Article • IEEE Transactions on Microwave Theory and Techniques, April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  30. Manufacturable Low-Cost Flip-Chip Mounting Technology for 300–500-GHz Assemblies

    Article • IEEE Transactions on Components Packaging and Manufacturing Technology, April 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  31. An efficient W-band InP DHBT digital power amplifier

    Article • International Journal of Microwave and Wireless Technologies, March 2017, Cambridge University Press

    Nils Weimann

  32. Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications: InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration

    Article • IEEE Microwave Magazine, March 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  33. A 100 GHz fundamental oscillator with 25% efficiency based on transferred-substrate InP-DHBT technology

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  34. A 315 GHz reflection-type push-push oscillator in InP-DHBT technology

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  35. An efficient W-band InP DHBT digital power amplifier

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  36. Balanced G-band Gm-boosted frequency doublers in transferred substrate InP HBT technology

    Article • October 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  37. Benzocyclobutene dry etch with minimized byproduct redeposition for application in an InP DHBT process

    Article • Microelectronic Engineering, August 2016, Elsevier

    Nils Weimann

  38. A 200 mW InP DHBT W-band power amplifier in transferred-substrate technology with integrated diamond heat spreader

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  39. A 330 GHz active frequency quadrupler in InP DHBT transferred-substrate technology

    Article • May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  40. Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer

    Article • IEEE Transactions on Electron Devices, May 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  41. SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications

    Article • physica status solidi (a), January 2016, Wiley

    Nils Weimann

  42. A G-Band High Power Frequency Doubler in Transferred-Substrate InP HBT Technology

    Article • IEEE Microwave and Wireless Components Letters, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  43. Performance study of a 248 GHz voltage controlled hetero-integrated source in InP-on-BiCMOS technology

    Article • International Journal of Microwave and Wireless Technologies, November 2015, Cambridge University Press

    Nils Weimann

  44. A 250 GHz hetero-integrated VCO with 0.7 mW output power in InP-on-BiCMOS technology

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  45. An efficient 290 GHz harmonic oscillator in transferred-substrate InP-DHBT technology

    Article • September 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  46. Erratum: ‘Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer’

    Article • Electronics Letters, July 2015, the Institution of Engineering and Technology (the IET)

    Nils Weimann

  47. Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer

    Article • Electronics Letters, June 2015, the Institution of Engineering and Technology (the IET)

    Ms Ksenia Nosaeva, Nils Weimann

  48. Flip-Chip Interconnects for 250 GHz Modules

    Article • IEEE Microwave and Wireless Components Letters, June 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  49. A 330 GHz hetero-integrated source in InP-on-BiCMOS technology

    Article • May 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  50. Silicon nitride stop layer in back-end-of-line planarization for wafer bonding application

    Article • November 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  51. A 270 GHz push-push oscillator in InP-DHBT-on-BiCMOS technology

    Article • October 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  52. On-wafer small-signal and large-signal measurements up to sub-THz frequencies

    Article • September 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  53. Small- and large-signal modeling of InP HBTs in transferred-substrate technology

    Article • International Journal of Microwave and Wireless Technologies, March 2014, Cambridge University Press

    Nils Weimann

  54. Manufacturable Monolithically Integrated InP Dual-Port Coherent Receiver for 100G PDM-QPSK Applications

    Article • January 2011, Optical Society of America (OSA)

    Nils Weimann

  55. Efficient Membrane Grating Couplers on InP

    Article • IEEE Photonics Technology Letters, June 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  56. InP DHBT circuits: From device physics to 40Gb/s and 100Gb/s transmission system experiments

    Article • Bell Labs Technical Journal, November 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  57. InP DHBT circuits for 100 Gb/s Ethernet applications

    Article • May 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  58. Highly Efficient Harmonically Tuned InP D-HBT Push-Push Oscillators Operating up to 287 GHz

    Article • June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  59. In[sub 0.68]Ga[sub 0.32]As∕Al[sub 0.64]In[sub 0.36]As∕InP 4.5 μm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2007, American Vacuum Society

    Nils Weimann

  60. Fully dry-etched InP Double-Hetero Bipolar Transistors with ft > 400 GHz

    Article • June 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  61. Submicron InP D-HBT single-stage distributed amplifier with 17 dB gain and over 110 GHz bandwidth

    Article • June 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  62. High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors

    Article • Applied Physics Letters, April 2006, American Institute of Physics

    Nils Weimann

  63. InP double-hetero bipolar transistor technology for 130 GHz clock speed

    Article • physica status solidi c, March 2006, Wiley

    Nils Weimann

  64. Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers

    Article • Applied Physics Letters, April 2005, American Institute of Physics

    Nils Weimann

  65. High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz

    Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  66. High gain-bandwidth differential distributed InP D-HBT driver amplifiers with large (11.3 V/sub pp/) output swing at 40 Gb/s

    Article • IEEE Journal of Solid-State Circuits, October 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  67. Self-Heating of Submicrometer InP–InGaAs DHBTs

    Article • IEEE Electron Device Letters, June 2004, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  68. Smooth and vertical-sidewall InP etching using Cl[sub 2]/N[sub 2] inductively coupled plasma

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2004, American Vacuum Society

    Nils Weimann

  69. Effect of dislocations on local transconductance in AlGaN/GaN heterostructures as imaged by scanning gate microscopy

    Article • Applied Physics Letters, December 2003, American Institute of Physics

    Nils Weimann

  70. Patterning GaN Microstructures by Polarity-Selective Chemical Etching

    Article • Japanese Journal of Applied Physics, December 2003, Japan Society of Applied Physics

    Nils Weimann

  71. High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

    Article • phys stat sol (a), November 2003, Wiley

    Nils Weimann

  72. SiGe differential transimpedance amplifier with 50-GHz bandwidth

    Article • IEEE Journal of Solid-State Circuits, September 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  73. Second-harmonic generation in periodically poled GaN

    Article • Applied Physics Letters, August 2003, American Institute of Physics

    Nils Weimann

  74. GaN nanotip pyramids formed by anisotropic etching

    Article • Journal of Applied Physics, July 2003, American Institute of Physics

    Nils Weimann

  75. Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

    Article • Applied Physics Letters, June 2003, American Institute of Physics

    Nils Weimann

  76. Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

    Article • IEEE Electron Device Letters, February 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  77. Electron Field Emission from GaN Nanotip Pyramids

    Article • MRS Proceedings, January 2003, Cambridge University Press

    Nils Weimann

  78. A high-gain InP D-HBT driver amplifier with 50 GHz bandwidth and 10 Vpp differential output swing at 40 Gb/s

    Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  79. An InGaAs/InP HBT differential transimpedance amplifier with 47 GHz bandwidth

    Article • January 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  80. Unpassivated AlGaN∕GaN HEMTs with CW power density of 3.2 W∕mm at 25 GHz grown by plasma-assisted MBE

    Article • Electronics Letters, January 2003, the Institution of Engineering and Technology (the IET)

    Nils Weimann

  81. Submicron AlGaN/GaN HEMTs with very high drain current density grown by plasma-assisted MBE on 6H-SiC

    Article • IEEE Electron Device Letters, December 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  82. Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

    Article • Applied Physics Letters, August 2002, American Institute of Physics

    Nils Weimann

  83. High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

    Article • Journal of Applied Physics, July 2002, American Institute of Physics

    Nils Weimann

  84. Thin-film resistor fabrication for InP technology applications

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 2002, American Vacuum Society

    Nils Weimann

  85. Undoped AlGaN/GaN HEMTs for microwave power amplification

    Article • IEEE Transactions on Electron Devices, March 2001, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  86. Compact InP-based HBT VCOs with a wide tuning range at W- and D-band

    Article • IEEE Transactions on Microwave Theory and Techniques, January 2000, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  87. Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices

    Article • physica status solidi (b), November 1999, Wiley

    Nils Weimann

  88. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers

    Article • Applied Physics Letters, July 1999, American Institute of Physics

    Nils Weimann

  89. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    Article • Journal of Applied Physics, March 1999, American Institute of Physics

    Nils Weimann

  90. The role of dislocation scattering in n-type GaN films

    Article • Applied Physics Letters, August 1998, American Institute of Physics

    Nils Weimann

  91. Scattering of electrons at threading dislocations in GaN

    Article • Journal of Applied Physics, April 1998, American Institute of Physics

    Nils Weimann

  92. Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices

    Article • January 1997, Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  93. AlGaN/GaN HEMTs grown by MBE on semi-insulating HVPE GaN templates

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  94. AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  95. Comparison of high mobility AlGaN/GaN heterostructures grown by MBE on HVPE GaN templates and directly nucleated on sapphire

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  96. High Gain-Bandwidth InP waveguide Phototransistor

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  97. High Speed Integrated InP Photonic Digital-to-Analog Converter

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  98. High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25 GHz

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  99. Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  100. Power limits of polarization-induced AlGaN/GaN HEMT's

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann

  101. Towards planar processing for InP DHBTs

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Nils Weimann