All Stories

  1. Surface energy engineering for LiTaO3 and α-quartz SiO2 for low temperature (<220 °C) wafer bonding

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 2019, American Vacuum Society

    Mr Mohammed Sahal, Prof. Dr. Nicole Herbots

  2. Measuring Surface Energies of GaAs (100) and Si (100) by Three Liquid Contact Angle Analysis (3LCAA) for Heterogeneous Nano-BondingTM

    Article • MRS Advances, July 2018, Cambridge University Press

    Prof. Dr. Nicole Herbots

  3. Comparative Study of Surface Energies of Native Oxides of Si(100) and Si(111) via Three Liquid Contact Angle Analysis

    Article • MRS Advances, January 2018, Cambridge University Press

    Prof. Dr. Nicole Herbots

  4. Determining Canine Blood and Human Blood Composition by Congealing Microliter Drops into Homogeneous Thin Solid Films (HTSFs) via HemaDrop™

    Article • MRS Advances, January 2017, Cambridge University Press

    Prof. Dr. Nicole Herbots

  5. Accurate blood diagnostic using Ion Beam Analysis on blood drops

    Article • MRS Advances, January 2016, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  6. Lasting Non-toxic Anti-fog

    Article • MRS Advances, January 2016, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  7. How to measure molecules on Si surfaces and their effect of surface tension.

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, February 2012, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  8. Ion Beam Analysis Of Silicon-Based Surfaces And Correlation With Surface Energy Measurements

    Article • January 2011, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  9. Particle-Induced X-Ray Emission (PIXE) Of Silicate Coatings On High Impact Resistance Polycarbonates

    Article • January 2011, American Institute of Physics

    Prof. Dr. Nicole Herbots

  10. A New 3D Multistring Code to Identify Compound Oxide Nanophase With Ion Channeling

    Article • MRS Proceedings, January 2007, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  11. Atomic displacement free interfaces and atomic registry in SiO2∕(1×1) Si(100)

    Article • Journal of Applied Physics, November 2006, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  12. Infrared spectroscopic analysis of an ordered Si/SiO2 interface

    Article • Applied Physics Letters, January 2004, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  13. The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1×1) Si(100)

    Article • Materials Science and Engineering B, December 2001, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  14. Heteroepitaxial properties of Si1−x−yGexCy on Si(100) grown by combined ion- and molecular-beam deposition

    Article • Journal of Applied Physics, April 1997, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  15. Microstructure and ion beam characterization of heteroepitaxial Si1−x−yGexCy

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 1996, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  16. Characterization of carbon in heteroepitaxial Si1 − x − yGexCy thin films via combined ion channeling and nuclear resonance analysis

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 1996, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  17. Hydrogen passivation of Si(100) wafers as templates for low temperature (T < 600°C) epitaxy

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, September 1996, Elsevier

    Prof. Dr. Nicole Herbots

  18. Comparative study on dry oxidation of heteroepitaxial Si1−xGexand Si1−x−yGexCyon Si(100)+

    Article • Journal of Applied Physics, August 1996, American Institute of Physics

    Prof. Dr. Nicole Herbots

  19. The onset of secondary phase precipitation during synthesis of heteroepitaxial Si1−x−yGexCy on Si(100)

    Article • Applied Physics Letters, February 1996, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  20. SIMS, EDX, EELS, AES, XPS study of interphases in nicalon fibre-LAS glass matrix composites

    Article • Journal of Materials Science, September 1994, Springer Science + Business Media

    Prof. Dr. Nicole Herbots

  21. Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon

    Article • Journal of Materials Research, September 1993, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  22. Microstructure and stoichiometry dependence of ion beam nitrides as a function of energy and temperature: A comparative study between Si and SiGe

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 1992, American Vacuum Society

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  23. Role of ion energy in ion beam oxidation of semiconductors: Experimental study and model

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 1992, American Vacuum Society

    Prof. Dr. Nicole Herbots

  24. Kinetics of ion beam nitridation (IBN) of Si and of MBE-grown Ge and SixGe1−x alloys: The role of ion energy, ion dose and substrate temperature

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, April 1992, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  25. Structure and properties of silicon nitride and nitride prepared by direct low energy ion beam nitridation

    Article • Materials Science and Engineering B, January 1992, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  26. New SiGe dielectrics grown at room temperature by low‐energy ion beam oxidation and nitridation

    Article • Applied Physics Letters, October 1991, American Institute of Physics

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  27. Stability of C49 and C54 phases of TiSi2under ion bombardment

    Article • Journal of Applied Physics, September 1991, American Institute of Physics

    Prof. Dr. Nicole Herbots

  28. A quantitative model of point defect diffusivity and recombination in ion beam deposition and combined ion and molecular deposition

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, July 1991, American Vacuum Society

    Prof. Dr. Nicole Herbots

  29. Ion beam oxidation of GaAs: The role of ion energy

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, May 1991, American Vacuum Society

    Prof. Dr. Nicole Herbots

  30. Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

    Article • MRS Proceedings, January 1991, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  31. Shallow-junction diode formation by implantation of arsenic and boron through titanium-silicide films and rapid thermal annealing

    Article • IEEE Transactions on Electron Devices, January 1990, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Dr. Nicole Herbots

  32. The role of interfacial segregation and microstructure in interdiffusion between aluminum and silicon

    Article • Journal of Electronic Materials, November 1989, Springer Science + Business Media

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  33. Ion beam deposition in materials research

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, February 1989, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  34. A Model for Interdiffusion at Metal Semiconductor Interfaces: Conditions for Spiking

    Article • MRS Proceedings, January 1989, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  35. Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

    Article • MRS Proceedings, January 1989, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  36. Low‐temperature epitaxy of Si and Ge by direct ion beam deposition

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, July 1987, American Vacuum Society

    Prof. Dr. Nicole Herbots

  37. Ion Beam Deposition

    Article • MRS Bulletin, March 1987, Cambridge University Press

    Prof. Dr. Nicole Herbots

  38. Low-temperature epitaxial growth of Si and Ge and fabrication of isotopic heterostructures by direct ion beam deposition

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, January 1987, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  39. A comparison of AES, SIMS, ISS and RBS analysis of Si x N y layers

    Article • Fresenius Zeitschrift für Analytische Chemie, January 1987, Springer Science + Business Media

    Prof. Dr. Nicole Herbots

  40. Ion-solid interactions during ion beam deposition of 74Ge and 30Si on Si at very low ion energies (0–200 eV range)

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, March 1986, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  41. RBS study of the effect of arsenic and phosphorus interfacial segregation upon the sintering of contacts between implanted polycrystalline silicon and aluminum: Silicon(1%)

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, March 1985, Elsevier

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  42. Comparative study of Nb and TiW barrier layers between Au and a‐SiO2

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, April 1984, American Vacuum Society

    Prof. Dr. Nicole Herbots

  43. Arsenic Dopant Influence upon the Sintering Behavior of the Aluminum-Polysilicon Interface

    Article • Journal of The Electrochemical Society, January 1984, The Electrochemical Society

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots

  44. Surface Characterization of Arsenic Implanted Silicon (100): A New Insight into the Inhibition of Aluminum/Silicon Interdiffusion

    Article • MRS Proceedings, January 1984, Cambridge University Press

    Prof. Nicole Herbots, Prof. Dr. Nicole Herbots