All Stories

  1. Effective passivation of p- and n-type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

    Article • Journal of Applied Physics, January 2024, American Institute of Physics

    Minghwei Hong

  2. In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures

    Article • Applied Physics Letters, June 2021, American Institute of Physics

    Minghwei Hong

  3. Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

    Article • Applied Physics Letters, January 2019, American Institute of Physics

    Minghwei Hong

  4. In - situ atomic layer deposition of tri -methylaluminum and water on pristine single-crystal (In)GaAs surfaces: electronic and electric structures

    Article • Nanotechnology, March 2015, Institute of Physics Publishing

    Minghwei Hong

  5. Single crystal Gd2O3epitaxially on GaAs(111)A

    Article • CrystEngComm, June 2014, Royal Society of Chemistry

    Minghwei Hong, Dr Chia-Hung Hsu

  6. Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition

    Article • Applied Physics Letters, April 2012, American Institute of Physics

    Minghwei Hong