All Stories

  1. Stress Characterization of the Interface Between Thermal Oxide and the 4H-SiC Epitaxial Layer Using Near-Field Optical Raman Microscopy

    Article • Applied Spectroscopy, July 2019, SAGE Publications

    Masanobu Yoshikawa

  2. Atomic Coordination Analysis of Nitrogen Introduced in SiO2/ SiC Interface and SiO2 Layer by XAFS Measurement

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Masanobu Yoshikawa

  3. Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Masanobu Yoshikawa

  4. Stress Characterization of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method

    Article • Applied Spectroscopy, May 2016, SAGE Publications

    Masanobu Yoshikawa

  5. Abnormal Raman Spectral Variation with Excitation Wavelength in Boron-Doped Single-Crystalline Diamond

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Masanobu Yoshikawa

  6. Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Masanobu Yoshikawa