All Stories

  1. Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

    Article • Applied Physics Letters, May 2021, American Institute of Physics

    Martin Feneberg, Prof. Dr. Markus Weyers

  2. Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes

    Article • Applied Physics Letters, February 2020, American Institute of Physics

    Martin Feneberg

  3. Anisotropic phonon properties and effective electron mass in α-Ga2O3

    Article • Applied Physics Letters, April 2019, American Institute of Physics

    Martin Feneberg

  4. Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift

    Article • APL Materials, February 2019, American Institute of Physics

    Martin Feneberg, Zbigniew Galazka