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  1. The relationship between the doping concentration and d0 ferromagnetism in n-type 4H-SiC

    Article • Journal of Applied Physics, November 2020, American Institute of Physics

    Lei Yuan

  2. Improvement of Current Gain and Breakdown Voltage in 4H-SiC BJTs Employing High-k Dielectric as an Interfacial Layer

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Lei Yuan, Yimen Zhang