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  1. Interface-Driven Self-Organization (IDSO) enables thermal-oxide-quality SiO₂ below 65°C

    Article • AIP Advances, October 2025, American Institute of Physics

    Kohei Sakaike

  2. Ultra-Low-Temperature Process Realizes SiO₂ Comparable to Thermal Oxide Film Formed at 1000 °C

    Article • AIP Advances, November 2024, American Institute of Physics

    Kohei Sakaike