All Stories

  1. Optical fiber approximation of GaN-based vertical-cavity surface-emitting laser diodes with a curved mirror

    Article • Optics Express, June 2025, Optical Society of America (OSA)

    Kazuki Ohnishi

  2. Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy

    Article • Journal of Crystal Growth, December 2024, Elsevier

    Kazuki Ohnishi

  3. (Ultra)wide bandgap semiconductor heterostructures for electronics cooling

    Article • Applied Physics Reviews, November 2024, American Institute of Physics

    Kazuki Ohnishi

  4. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate

    Article • Journal of Crystal Growth, December 2023, Elsevier

    Kazuki Ohnishi

  5. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy

    Article • Journal of Crystal Growth, December 2023, Elsevier

    Kazuki Ohnishi

  6. Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

    Article • Applied Physics Letters, April 2023, American Institute of Physics

    Kazuki Ohnishi

  7. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy

    Article • Journal of Applied Physics, October 2022, American Institute of Physics

    Kazuki Ohnishi

  8. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates

    Article • Journal of Crystal Growth, August 2022, Elsevier

    Kazuki Ohnishi

  9. Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg

    Article • Applied Physics Letters, December 2021, American Institute of Physics

    Kazuki Ohnishi

  10. Erratum: “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy” [Appl. Phys. Lett. 119, 152102 (2021)]

    Article • Applied Physics Letters, November 2021, American Institute of Physics

    Kazuki Ohnishi

  11. Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

    Article • Applied Physics Letters, October 2021, American Institute of Physics

    Kazuki Ohnishi

  12. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy

    Article • Journal of Crystal Growth, July 2021, Elsevier

    Kazuki Ohnishi

  13. Thermodynamic analysis of the gas phase reaction of Mg-doped GaN growth by HVPE using MgO

    Article • Japanese Journal of Applied Physics, July 2020, Institute of Physics Publishing

    Kazuki Ohnishi

  14. Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

    Article • Applied Physics Express, May 2020, Institute of Physics Publishing

    Kazuki Ohnishi

  15. Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN

    Article • Japanese Journal of Applied Physics, May 2019, Institute of Physics Publishing

    Kazuki Ohnishi

  16. Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

    Article • Applied Physics Express, February 2018, Institute of Physics Publishing

    Kazuki Ohnishi

  17. Halide vapor phase epitaxy of thick GaN films on ScAlMgO4substrates and their self-separation for fabricating freestanding wafers

    Article • Applied Physics Express, September 2017, Institute of Physics Publishing

    Kazuki Ohnishi