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  1. High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4 substrates

    Article • AIP Advances, April 2023, American Institute of Physics

    Kazuhiro Ohkawa

  2. Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2

    Article • AIP Advances, June 2022, American Institute of Physics

    Kazuhiro Ohkawa

  3. High-color-rendering-index phosphor-free InGaN-based white light-emitting diodes by carrier injection enhancement via V-pits

    Article • Applied Physics Letters, October 2020, American Institute of Physics

    Kazuhiro Ohkawa

  4. Effects of size on the electrical and optical properties of InGaN-based red light-emitting diodes

    Article • Applied Physics Letters, April 2020, American Institute of Physics

    Kazuhiro Ohkawa

  5. Red LEDs made of nitride semiconductors

    Article • Applied Physics Letters, April 2020, American Institute of Physics

    Kazuhiro Ohkawa