Dr Jyotika Jogi
A.R.S.D. College, University of Delhi
Reader, Engineering & Technology
India
My Publications
Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for mill...
IOSR Journal of Electrical and Electronics Engineering
January 2014
Modeling Quantum Effects In The Channel Of A Nanoscale Symmetric Double Gate InAlAs/InG...
IOSR Journal of Electrical and Electronics Engineering
January 2014
Impact of Temperature and Indium Composition in the Channel on the Microwave Performanc...
IEEE Transactions on Nanotechnology
November 2013
RF characterization of 100-nm separate gate InAlAs/InGaAs DG-HEMT
Microwave and Optical Technology Letters
August 2013
Quantum simulation for separate double gate InA1As/InGaAs HEMT
April 2013
Intrinsic admittance parameter for separate gate InA1As/InGaAs DG-HEMT for 100 nm gate ...
April 2013
Temperature-Dependent Analytical Model for Microwave and Noise Performance Characteriza...
IEEE Transactions on Device and Materials Reliability
March 2013
Eigenenergies of a Nanoscale Symmetric Double Triangular Quantum Well in Double Gate In...
January 2013
Impact of noise temperature constant and diffusion coefficient on the minimum noise fig...
December 2012
A novel analytical model for small signal parameter for Separate Gate InAlAs/InGaAs DG-...
November 2012
Nano-modeling of the doping profiles for a symmetric double gate InAlAs/InGaAs/InP HEMT
November 2012
A comprehensive charge control based analysis of the effect of donor-layer doping and d...
October 2012
An Accurate Charge-Control-Based Approach for Noise Performance Assessment of a Symmetr...
IEEE Transactions on Electron Devices
June 2012
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT
March 2012
Quantum modeling of electron confinement in double triangular quantum well formed in na...
December 2011
A comprehensive analytical approach for the evaluation of the P,R and C noise coefficie...
November 2011
Scattering parameter based modeling and simulation of symmetric tied-gate InAlAs/InGaAs...
Solid-State Electronics
September 2011
An analytical charge-based drain current model for nano-scale In 0.52 Al 0.48 As–In 0....
Semiconductor Science and Technology
October 2010
Modeling of hetero-interface potential and threshold voltage for tied and separate nano...
Microelectronics Reliability
December 2009
Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave freque...
April 2004
An improved intrinsic small-signal equivalent circuit model of delta-doped AlGaAs/InGaA...
Microwave and Optical Technology Letters
June 2003
An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate...
Microelectronics Journal
August 2002
A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a p...
Microelectronics Journal
December 2001
Carrier-concentration-dependent low-field-mobility model for InAlAs/InGaAs/InP lattice-...
Microwave and Optical Technology Letters
January 2001
