All Stories

  1. Hydrogen‐assisted nitrogen incorporation in zinc oxynitride films grown by rf sputtering

    Article • Electronics Letters, January 2021, the Institution of Engineering and Technology (the IET)

    prof. Jungyol Jo

  2. Hydrogen-Assisted Sputtering Growth of TiN on Ceramic Substrates

    Article • Coatings, April 2019, MDPI AG

    prof. Jungyol Jo

  3. (Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate

    Article • ECS Transactions, April 2018, The Electrochemical Society

    prof. Jungyol Jo

  4. Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

    Article • Japanese Journal of Applied Physics, November 2017, Japan Society of Applied Physics

    prof. Jungyol Jo

  5. ZnO thin-film transistor grown by rf sputtering using Zn metal target and oxidizer pulsing

    Article • Journal of the Ceramic Society of Japan, January 2017, Ceramic Society of Japan

    prof. Jungyol Jo

  6. Control of current distribution between parallel-connected negative temperature coefficient thermistors

    Article • Electronics Letters, December 2016, the Institution of Engineering and Technology (the IET)

    prof. Jungyol Jo

  7. ZnO Thin-Film Transistor Grown by rf Sputtering Using Carbon Dioxide and Substrate Bias Modulation

    Article • Journal of Nanomaterials, January 2014, Hindawi Publishing Corporation

    prof. Jungyol Jo

  8. Incomplete oxidation in back channel of GaInZnO thin-film transistor grown by rf sputtering

    Article • The European Physical Journal Applied Physics, April 2011, EDP Sciences

    prof. Jungyol Jo

  9. Anomalous capacitance change in low-temperature grown ZnO thin-film transistors

    Article • The European Physical Journal Applied Physics, September 2010, EDP Sciences

    prof. Jungyol Jo

  10. Acceptor behavior of N2O in MOCVD-grown ZnO thin-film transistors

    Article • physica status solidi (b), May 2010, Wiley

    prof. Jungyol Jo

  11. Improvement of on/off ratio in ZnO thin-film transistor by using growth interruptions during metalorganic chemical vapor deposition

    Article • Thin Solid Films, October 2009, Elsevier

    prof. Jungyol Jo

  12. Resistance increase in TiOx induced by annealing and voltage application

    Article • Thin Solid Films, October 2008, Elsevier

    prof. Jungyol Jo

  13. Enhancement-Mode ZnO Thin-Film Transistor Grown by Metalorganic Chemical Vapor Deposition

    Article • Applied Physics Express, April 2008, Institute of Physics Publishing

    prof. Jungyol Jo

  14. Enhancement-mode ZnO Thin-film Transistors Grown by MOCVD

    Article • January 2008, Cambridge University Press

    prof. Jungyol Jo

  15. Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition

    Article • Japanese Journal of Applied Physics, April 2007, Japan Society of Applied Physics

    prof. Jungyol Jo

  16. Improvement of Turn-Off Characteristics in ZnOTFT's by Introducing Hydrogen During MOCVD Growth

    Article • MRS Proceedings, January 2007, Cambridge University Press

    prof. Jungyol Jo

  17. Defect Passivation by Hydrogen in Zinc Oxide Films Grown by MOCVD

    Article • January 2007, Japan Society of Applied Physics

    prof. Jungyol Jo

  18. Effect of Hydrogen in Zinc Oxide Thin-Film Transistor grown by MOCVD

    Article • January 2006, Japan Society of Applied Physics

    prof. Jungyol Jo

  19. Field-assisted Electron Injection Current in Submicron Pentacene Transistors

    Article • January 2005, Japan Society of Applied Physics

    prof. Jungyol Jo

  20. Gate tunable electron injection in submicron pentacene transistors

    Article • Nanotechnology, June 2004, Institute of Physics Publishing

    prof. Jungyol Jo

  21. Modification of Silicon Optical Properties by 250 keV Electron Irradiation

    Article • Japanese Journal of Applied Physics, April 2004, Japan Society of Applied Physics

    prof. Jungyol Jo

  22. Reduction of Turn-off Time in Silicon pn Diodes by Low Energy (270 keV) Electron Irradiation

    Article • Physica Scripta, January 2002, Institute of Physics Publishing

    prof. Jungyol Jo

  23. Comparison of Breakdown Behavior in Electron-Irradiated and Proton-Irradiated Silicon pn Junctions

    Article • Japanese Journal of Applied Physics, July 2000, Japan Society of Applied Physics

    prof. Jungyol Jo

  24. Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes

    Article • Japanese Journal of Applied Physics, March 1998, Japan Society of Applied Physics

    prof. Jungyol Jo

  25. Effect of doping density on capacitance of resonant tunneling diodes

    Article • Journal of Applied Physics, November 1997, American Institute of Physics

    prof. Jungyol Jo

  26. Observation of a large capacitive current in a double barrier resonant tunneling diode at resonance

    Article • Applied Physics Letters, April 1994, American Institute of Physics

    prof. Jungyol Jo