All Stories

  1. Monolithic white light emitting diodes using a (Ga,In)N-based light converter

    Article • March 2014, SPIE

    Julien Brault

  2. Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

    Article • March 2014, SPIE

    Julien Brault

  3. Erratum: “Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy” [Appl. Phys. Lett. 103, 032102 (2013)]

    Article • Applied Physics Letters, December 2013, American Institute of Physics

    Julien Brault

  4. Excitons in nitride heterostructures: From zero- to one-dimensional behavior

    Article • Physical Review B, September 2013, American Physical Society (APS)

    Julien Brault

  5. Metal Organic Vapor Phase Epitaxy of Monolithic Two-Color Light-Emitting Diodes Using an InGaN-Based Light Converter

    Article • Applied Physics Express, September 2013, Japan Society of Applied Physics

    Julien Brault

  6. Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy

    Article • Applied Physics Letters, July 2013, American Institute of Physics

    Julien Brault

  7. AlGaN-Based Light Emitting Diodes Using Self-Assembled GaN Quantum Dots for Ultraviolet Emission

    Article • Japanese Journal of Applied Physics, May 2013, Institute of Physics Publishing

    Julien Brault

  8. Blue Light-Emitting Diodes Grown on ZnO Substrates

    Article • Applied Physics Express, April 2013, Japan Society of Applied Physics

    Julien Brault

  9. Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes

    Article • Journal of Crystal Growth, January 2013, Elsevier

    Julien Brault

  10. Blue-green and white color tuning of monolithic light emitting diodes

    Article • Journal of Applied Physics, October 2010, American Institute of Physics

    Julien Brault

  11. Carrier transfer and recombination dynamics of a long-lived and visible range emission from multi-stacked GaN/AlGaN quantum dots

    Article • Applied Physics Letters, August 2010, American Institute of Physics

    Julien Brault

  12. Asymmetric barrier composition GaN/(Ga,In)N/(Al,Ga)N quantum wells for yellow emission

    Article • physica status solidi c, July 2010, Wiley

    Julien Brault

  13. Phase separation in GaN/AlGaN quantum dots

    Article • Applied Physics Letters, October 2009, American Institute of Physics

    Julien Brault

  14. UV imaging based on AlGaN arrays

    Article • physica status solidi c, May 2009, Wiley

    Julien Brault

  15. GaN/Al0.5Ga0.5N quantum dots and quantum dashes

    Article • physica status solidi (b), March 2009, Wiley

    Julien Brault

  16. Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

    Article • Applied Physics Express, November 2008, Institute of Physics Publishing

    Julien Brault

  17. Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding

    Article • Journal of Applied Physics, June 2008, American Institute of Physics

    Julien Brault

  18. Layer-by-layer epitaxial growth of Mg on GaN(0001)

    Article • Applied Physics Letters, June 2008, American Institute of Physics

    Julien Brault

  19. Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots

    Article • Applied Physics Letters, February 2008, American Institute of Physics

    Julien Brault

  20. High doping level in Mg-doped GaN layers grown at low temperature

    Article • Journal of Applied Physics, January 2008, American Institute of Physics

    Julien Brault

  21. AlGaN-based focal plane arrays for selective UV imaging at 310nm and 280nm and route toward deep UV imaging

    Article • October 2007, SPIE

    Julien Brault

  22. Channel Width and Length Dependence in Si Nanocrystal Memories With Ultra-Nanoscale Channel

    Article • IEEE Transactions on Nanotechnology, May 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Julien Brault

  23. Intraband polaron dynamics of excited carriers in InAs ∕ In x Al 1 − x As quantum dots

    Article • Physical Review B, February 2005, American Physical Society (APS)

    Julien Brault

  24. Optical characteristics of hexagonal and cubic GaN self-assembled quantum dots

    Article • June 2004, SPIE

    Julien Brault

  25. Spectroscopy of the electronic states in InAs quantum dots grown on In x Al 1 − x A s / I n P ( 001 )

    Article • Physical Review B, April 2004, American Physical Society (APS)

    Julien Brault

  26. Photoconductive spectral analysis of InAs quantum dot under normal incidence

    Article • Infrared Physics & Technology, October 2003, Elsevier

    Julien Brault

  27. Cathodoluminescence study of carrier diffusion in AlGaN

    Article • Journal of Applied Physics, August 2003, American Institute of Physics

    Julien Brault

  28. Dynamic saturation of an intersublevel transition in self-organized I n A s / I n x Al 1 − x As quantum dots

    Article • May 2003, American Physical Society (APS)

    Julien Brault

  29. Gallium adsorption on (0001) GaN surfaces

    Article • April 2003, American Physical Society (APS)

    Julien Brault

  30. Temperature dependence of responsivity in quantum dot infrared photodetectors

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2003, Elsevier

    Julien Brault

  31. Intraband spectroscopy of self-organized InAs/InAlAs nanostructures grown on

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2003, Elsevier

    Julien Brault

  32. Polarized front-illumination response in quantum dot infrared photodetectors

    Article • January 2003, SPIE

    Julien Brault

  33. Assessment of AlGaN Growth by Plasma Assisted MBE Using In as a Surfactant

    Article • physica status solidi (b), December 2002, Wiley

    Julien Brault

  34. Laser UV à semiconducteur nitrure pompé par des micropointes

    Article • Journal de Physique IV (Proceedings), June 2002, EDP Sciences

    Julien Brault

  35. Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

    Article • Journal of Applied Physics, April 2002, American Institute of Physics

    Julien Brault

  36. Molecular-Beam Epitaxy of GaN: A Phase Diagram

    Article • phys stat sol (a), December 2001, Wiley

    Julien Brault

  37. Atomic Layer Epitaxy of Hexagonal and Cubic GaN Nanostructures

    Article • phys stat sol (a), December 2001, Wiley

    Julien Brault

  38. Atomic Layer Epitaxy of Hexagonal and Cubic GaN Nanostructures

    Article • phys stat sol (a), December 2001, Wiley

    Julien Brault

  39. Erratum to “Femtosecond mid-infrared study of electron dynamics in InAs/InAlAs quantum dots”

    Article • Physica E Low-dimensional Systems and Nanostructures, September 2001, Elsevier

    Julien Brault

  40. Infrared spectroscopy of self-organized InAs nanostructures grown on InAlAs/InP(001) for infrared photodetection applications

    Article • Infrared Physics & Technology, June 2001, Elsevier

    Julien Brault

  41. Femtosecond measurement of electron capture and intersubband relaxation in self-organized InAs quantum wires on In 1 − x Al x A s / I n P

    Article • February 2001, American Physical Society (APS)

    Julien Brault

  42. Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K

    Article • January 2001, American Physical Society (APS)

    Julien Brault

  43. Femtosecond Mid-Infrared study of electron dynamics in self-organized InAs quantum wires on InAIAs/InP (001)

    Article • January 2001, Springer Science + Business Media

    Julien Brault

  44. Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)

    Article • Applied Surface Science, August 2000, Elsevier

    Julien Brault

  45. Quantum dot infrared photodetectors in new material systems

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2000, Elsevier

    Julien Brault

  46. Femtosecond mid-infrared study of electron dynamics in InAs/InAlAs quantum dots

    Article • Physica E Low-dimensional Systems and Nanostructures, April 2000, Elsevier

    Julien Brault

  47. Alloying effects in self-assembled InAs/InP dots

    Article • Journal of Crystal Growth, May 1999, Elsevier

    Julien Brault

  48. Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001)

    Article • Applied Physics Letters, January 1999, American Institute of Physics

    Julien Brault

  49. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

    Article • Applied Physics Letters, November 1998, American Institute of Physics

    Julien Brault