All Stories

  1. A practical theoretical model for Ge-like epitaxial diodes. II. Matching the experimental optical responsivity in pin devices

    Article • Journal of Applied Physics, March 2025, American Institute of Physics

    Jose Menendez

  2. A practical theoretical model for Ge-like epitaxial diodes: I. The I–V characteristics

    Article • Journal of Applied Physics, March 2024, American Institute of Physics

    Jose Menendez

  3. Narrow band gap GeSn alloys

    Article • Applied Physics Letters, May 2019, American Institute of Physics

    Jose Menendez

  4. Doping dependence of the optical dielectric function in n-type germanium

    Article • Journal of Applied Physics, February 2019, American Institute of Physics

    Jose Menendez

  5. The direct bandgap of gray α-tin investigated by infrared ellipsometry

    Article • Applied Physics Letters, December 2018, American Institute of Physics

    Stefan Zollner, Jose Menendez

  6. Compositional dependence of the direct and indirect band gaps in Ge1−ySnyalloys from room temperature photoluminescence: implications for the indirect to direct gap crossover in intrinsic andn-type materials

    Article • Semiconductor Science and Technology, October 2014, Institute of Physics Publishing

    Jose Menendez