Professor Jonathan J Wierer

All Stories

1. 
   AlInN/GaN superlattice properties under varying gas flows

   Article • Journal of Crystal Growth, November 2026, Elsevier

   Professor Jonathan J Wierer

2. 
   Scaling the $3^{\text {rd}}$ Dimension: High-Density Component Development for 3D Photonic Integrated Circuits

   Article • July 2026, Institute of Electrical & Electronics Engineers (IEEE)

   Professor Jonathan J Wierer

3. 
   Effect of gas exposure on GaN surface quantum wells

   Article • Applied Physics Letters, June 2026, American Institute of Physics

   Professor Jonathan J Wierer, Dr. Henry O Everitt

4. 
   AlInN/GaN Superlattice Properties Under Varying Gas Flows

   Article • January 2026, Elsevier

   Professor Jonathan J Wierer

5. 
   Dense Interconnect Routing of Visible Deuterated Silicon Nitride (SiNx:D – SiOy:D) Photonic Integrated Circuits

   Article • January 2026, Optical Society of America (OSA)

   Professor Jonathan J Wierer

6. 
   Cox and Strack Measurements of Contact Resistivity for Low-Temperature Ohmic Contacts on the N-Face of GaN Substrates

   Article • IEEE Transactions on Electron Devices, January 2026, Institute of Electrical & Electronics Engineers (IEEE)

   Professor Jonathan J Wierer

7. 
   Design Optimization of High Efficiency Si3N4 Grating Coupler for Visible Photonics

   Article • January 2026, Optical Society of America (OSA)

   Professor Jonathan J Wierer

8. 
   Multi-Wavelength Loss Analysis of Deuterated Silicon Nitride (SiNx:D – SiOy:D) Waveguides for Visible Photonics

   Article • January 2026, Optical Society of America (OSA)

   Professor Jonathan J Wierer

9. 
   Single-Mode and Uni-Directional Control of III-V/Si Quantum Dot Microring Lasers via Azimuthal Gratings

   Article • January 2026, Optical Society of America (OSA)

   Professor Jonathan J Wierer

10. 
    Low-Loss and Compact Waveguide Bends for Large Scale Visible Photonic Integrated Circuits

    Article • January 2026, Optical Society of America (OSA)

    Professor Jonathan J Wierer

11. 
    (Invited) Development of Bipolar Semiconductor Devices for a III-N Material System

    Article • ECS Meeting Abstracts, November 2025, The Electrochemical Society

    Professor Jonathan J Wierer

12. 
    Surface treatments affect GaN surface quantum well emission

    Article • Applied Physics Letters, October 2025, American Institute of Physics

    Professor Jonathan J Wierer, Dr. Henry O Everitt

13. 
    Efficient calculations of phonon-assisted Auger recombination in InGaN/GaN quantum wells based on the effective-bond orbital model

    Article • Journal of Applied Physics, August 2025, American Institute of Physics

    Professor Jonathan J Wierer

14. 
    Process temperature dependence of sputtered MgO/n-type GaN metal–oxide–semiconductor capacitors

    Article • Journal of Applied Physics, July 2025, American Institute of Physics

    Professor Jonathan J Wierer

15. 
    Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions

    Article • Journal of Crystal Growth, February 2025, Elsevier

    Professor Jonathan J Wierer

16. 
    Visible-spectrum (405–505 nm) low-temperature-deposited deuterated (D) SiNx-SiOy waveguides

    Article • Applied Physics Letters, January 2025, American Institute of Physics

    Professor Jonathan J Wierer

17. 
    Comment on “Structural and optical characterization of thin AlInN films on c-plane GaN substrates” [J. Appl. Phys. 134, 075301 (2023)]

    Article • Journal of Applied Physics, October 2024, American Institute of Physics

    Professor Jonathan J Wierer

18. 
    High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400 ∘C

    Article • IEEE Photonics Technology Letters, September 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

19. 
    Growth and Characterization of AlInN/GaN Superlattices

    Article • Journal of Crystal Growth, January 2024, Elsevier

    Professor Jonathan J Wierer

20. 
    Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs with Sub-microsecond Switching Times

    Article • IEEE Electron Device Letters, January 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

21. 
    Thermal oxidation of lattice mismatched Al1-xInxN films on GaN

    Article • e-Prime - Advances in Electrical Engineering Electronics and Energy, September 2023, Elsevier

    Professor Jonathan J Wierer

22. 
    Structural and optical characterization of thin AlInN films on c-plane GaN substrates

    Article • Journal of Applied Physics, August 2023, American Institute of Physics

    Professor Jonathan J Wierer

23. 
    Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes

    Article • IEEE Journal of Quantum Electronics, April 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

24. 
    Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots

    Article • Materials, February 2023, MDPI AG

    Professor Jonathan J Wierer

25. 
    Electrical Performance of Sputtered Epitaxial Magnesium Oxide on $\textit{n}$-Type Gallium Nitride Metal–Oxide–Semiconductor Devices

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

26. 
    Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates

    Article • IEEE Transactions on Electron Devices, January 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

27. 
    Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission

    Article • IEEE Journal of Quantum Electronics, April 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

28. 
    Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates

    Article • Photonics Research, December 2021, Optical Society of America (OSA)

    Professor Jonathan J Wierer

29. 
    Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm

    Article • IEEE Journal of Quantum Electronics, December 2021, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

30. 
    Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN

    Article • Journal of Applied Physics, March 2021, American Institute of Physics

    Professor Jonathan J Wierer

31. 
    Electrical properties of MgO/GaN metal-oxide-semiconductor structures

    Article • Solid-State Electronics, October 2020, Elsevier

    Professor Jonathan J Wierer

32. 
    Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy

    Article • Journal of Crystal Growth, October 2020, Elsevier

    Professor Jonathan J Wierer

33. 
    AlInN/GaN diodes for power electronic devices

    Article • Applied Physics Express, September 2020, Institute of Physics Publishing

    Professor Jonathan J Wierer

34. 
    Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates

    Article • Journal of Crystal Growth, June 2020, Elsevier

    Professor Jonathan J Wierer

35. 
    Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition

    Article • Journal of Crystal Growth, April 2020, Elsevier

    Professor Jonathan J Wierer

36. 
    On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE

    Article • Journal of Crystal Growth, March 2020, Elsevier

    Professor Jonathan J Wierer

37. 
    Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering

    Article • IEEE Transactions on Electron Devices, February 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

38. 
    Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers

    Article • Journal of Applied Physics, December 2019, American Institute of Physics

    Professor Jonathan J Wierer

39. 
    III‐Nitride Micro‐LEDs for Efficient Emissive Displays

    Article • Laser & Photonics Review, August 2019, Wiley

    Professor Jonathan J Wierer

40. 
    Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices

    Article • ACS Applied Electronic Materials, July 2019, American Chemical Society (ACS)

    Professor Jonathan J Wierer

41. 
    AlInN for Vertical Power Electronic Devices

    Article • IEEE Transactions on Electron Devices, October 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

42. 
    Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

    Article • Applied Physics Letters, September 2018, American Institute of Physics

    Professor Jonathan J Wierer

43. 
    Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission

    Article • Applied Physics Letters, May 2018, American Institute of Physics

    Professor Jonathan J Wierer

44. 
    Ultra-Broadband Optical Gain in III-Nitride Digital Alloys

    Article • Scientific Reports, February 2018, Springer Science + Business Media

    Professor Jonathan J Wierer

45. 
    Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers

    Article • AIP Advances, October 2017, American Institute of Physics

    Professor Jonathan J Wierer

46. 
    Nitride Semiconductors

    Article • phys stat sol (a), August 2017, Wiley

    Professor Jonathan J Wierer

47. 
    Simulations of Junction Termination Extensions in Vertical GaN Power Diodes

    Article • IEEE Transactions on Electron Devices, May 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

48. 
    Effect of interface roughness on Auger recombination in semiconductor quantum wells

    Article • AIP Advances, March 2017, American Institute of Physics

    Professor Jonathan J Wierer

49. 
    Al0 .3Ga0.7N PN diode with breakdown voltage >1600 V

    Article • Electronics Letters, July 2016, the Institution of Engineering and Technology (the IET)

    Professor Jonathan J Wierer

50. 
    High voltage and high current density vertical GaN power diodes

    Article • Electronics Letters, June 2016, the Institution of Engineering and Technology (the IET)

    Professor Jonathan J Wierer

51. 
    III-nitride quantum dots for ultra-efficient solid-state lighting

    Article • Laser & Photonics Review, May 2016, Wiley

    Professor Jonathan J Wierer

52. 
    Vertical GaN Power Diodes With a Bilayer Edge Termination

    Article • IEEE Transactions on Electron Devices, January 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

53. 
    Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes

    Article • IEEE Transactions on Nuclear Science, December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

54. 
    Tutorial on III-Nitride solid state lighting and smart lighting

    Article • October 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

55. 
    Vertical GaN PIN Diodes with 5 kV Avalanche Breakdown.

    Article • September 2015, Office of Scientific and Technical Information (OSTI)

    Professor Jonathan J Wierer

56. 
    350-nm band edge-emitting laser diodes enabled by low-dislocation-density AlGaN templates

    Article • July 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

57. 
    Selective layer disordering in intersubband Al0.028Ga0.972N/AlN superlattices with silicon nitride capping layer

    Article • Applied Physics Express, June 2015, Japan Society of Applied Physics

    Professor Jonathan J Wierer

58. 
    Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

    Article • Journal of Applied Physics, May 2015, American Institute of Physics

    Professor Jonathan J Wierer

59. 
    Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

    Article • Journal of Applied Physics, April 2015, American Institute of Physics

    Professor Jonathan J Wierer

60. 
    Defect-enabled electrical current leakage in ultraviolet light-emitting diodes (Phys. Status Solidi A 4∕2015)

    Article • phys stat sol (a), April 2015, Wiley

    Professor Jonathan J Wierer

61. 
    On the increased efficiency in InGaN-based multiple quantum wells emitting at 530–590nm with AlGaN interlayers

    Article • Journal of Crystal Growth, April 2015, Elsevier

    Professor Jonathan J Wierer

62. 
    Defect-enabled electrical current leakage in ultraviolet light-emitting diodes

    Article • phys stat sol (a), March 2015, Wiley

    Professor Jonathan J Wierer

63. 
    Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

    Article • Journal of Applied Physics, March 2015, American Institute of Physics

    Professor Jonathan J Wierer

64. 
    Advantages of III-nitride laser diodes in solid-state lighting

    Article • phys stat sol (a), January 2015, Wiley

    Professor Jonathan J Wierer

65. 
    Optical Strong Coupling between near-Infrared Metamaterials and Intersubband Transitions in III-Nitride Heterostructures

    Article • ACS Photonics, October 2014, American Chemical Society (ACS)

    Professor Jonathan J Wierer

66. 
    Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

    Article • Applied Physics Letters, September 2014, American Institute of Physics

    Professor Jonathan J Wierer

67. 
    Solid-State Lighting: Toward Smart and Ultra-efficient Solid-State Lighting (Advanced Optical Materials 9/2014)

    Article • Advanced Optical Materials, September 2014, Wiley

    Professor Jonathan J Wierer

68. 
    Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes

    Article • Applied Physics Letters, August 2014, American Institute of Physics

    Professor Jonathan J Wierer

69. 
    Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

    Article • Journal of Applied Physics, August 2014, American Institute of Physics

    Professor Jonathan J Wierer

70. 
    Toward Smart and Ultra-efficient Solid-State Lighting

    Article • Advanced Optical Materials, June 2014, Wiley

    Professor Jonathan J Wierer

71. 
    Energy Frontier Research Center for Solid-State Lighting Science: Exploring New Materials Architectures and Light Emission Phenomena

    Article • The Journal of Physical Chemistry C, June 2014, American Chemical Society (ACS)

    Professor Jonathan J Wierer

72. 
    Effect of thickness and carrier density on the optical polarization of Al0.44Ga0.56N/Al0.55Ga0.45N quantum well layers

    Article • Journal of Applied Physics, May 2014, American Institute of Physics

    Professor Jonathan J Wierer

73. 
    Controlling indium incorporation in InGaN barriers with dilute hydrogen flows

    Article • Journal of Crystal Growth, March 2014, Elsevier

    Professor Jonathan J Wierer

74. 
    Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

    Article • phys stat sol (a), February 2014, Wiley

    Professor Jonathan J Wierer

75. 
    The potential of III-nitride laser diodes for solid-state lighting

    Article • physica status solidi c, February 2014, Wiley

    Professor Jonathan J Wierer

76. 
    Anisotropic optical polarization of AlGaN based 275 nm light-emitting diodes due to quantum-size effects

    Article • January 2014, Optical Society of America (OSA)

    Professor Jonathan J Wierer

77. 
    Spatial Mapping of Efficiency of GaN/InGaN Nanowire Array Solar Cells Using Scanning Photocurrent Microscopy

    Article • Nano Letters, November 2013, American Chemical Society (ACS)

    Professor Jonathan J Wierer

78. 
    Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array

    Article • Nano Letters, September 2013, American Chemical Society (ACS)

    Professor Jonathan J Wierer

79. 
    The potential of III-nitride laser diodes as a future solid-state lighting source

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Jonathan J Wierer

80. 
    Comparison between blue lasers and light-emitting diodes for future solid-state lighting

    Article • Laser & Photonics Review, August 2013, Wiley

    Professor Jonathan J Wierer

81. 
    Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches

    Article • January 2013, Springer Science + Business Media

    Professor Jonathan J Wierer

82. 
    Study of III-nitride laser diodes for solid-state lighting

    Article • January 2013, Optical Society of America (OSA)

    Professor Jonathan J Wierer

83. 
    III-nitride core-shell nanowire arrayed solar cells.

    Article • September 2012, Office of Scientific and Technical Information (OSTI)

    Professor Jonathan J Wierer

84. 
    Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells

    Article • Journal of Crystal Growth, September 2012, Elsevier

    Professor Jonathan J Wierer

85. 
    Light-Emitting Diodes: High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates (Small 11/2012)

    Article • Small, June 2012, Wiley

    Professor Jonathan J Wierer

86. 
    III-nitride core–shell nanowire arrayed solar cells

    Article • Nanotechnology, April 2012, Institute of Physics Publishing

    Professor Jonathan J Wierer

87. 
    High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

    Article • Small, March 2012, Wiley

    Professor Jonathan J Wierer

88. 
    Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

    Article • Applied Physics Letters, March 2012, American Institute of Physics

    Professor Jonathan J Wierer

89. 
    Top-down fabrication of GaN-based nanorod LEDs and lasers

    Article • February 2012, SPIE

    Professor Jonathan J Wierer

90. 
    III-nitride nanowire array solar cells

    Article • January 2012, Optical Society of America (OSA)

    Professor Jonathan J Wierer

91. 
    III-nitride nanowire array solar cells

    Article • January 2012, Optical Society of America (OSA)

    Professor Jonathan J Wierer

92. 
    III-nitride Photovoltaics

    Article • January 2012, Optical Society of America (OSA)

    Professor Jonathan J Wierer

93. 
    Light Extraction Methods in Light-Emitting Diodes

    Article • January 2011, Optical Society of America (OSA)

    Professor Jonathan J Wierer

94. 
    (Invited) III-Nitride Nanowires: Emerging Materials for Lighting and Energy Applications

    Article • January 2011, The Electrochemical Society

    Professor Jonathan J Wierer

95. 
    Silicon impurity-induced layer disordering of AlGaN/AlN superlattices

    Article • Applied Physics Letters, August 2010, American Institute of Physics

    Professor Jonathan J Wierer

96. 
    The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

    Article • Applied Physics Letters, February 2010, American Institute of Physics

    Professor Jonathan J Wierer

97. 
    III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

    Article • Nature Reports Climate Change, February 2009, Nature

    Professor Jonathan J Wierer

98. 
    Linearly polarized spontaneous emission from m-plane InGaN/GaN multiple-quantum-well LEDs

    Article • August 2005, SPIE

    Professor Jonathan J Wierer

99. 
    Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes

    Article • Applied Physics Letters, March 2005, American Institute of Physics

    Professor Jonathan J Wierer

100. 
     III-nitride LEDs with photonic crystal structures

     Article • March 2005, SPIE

     Professor Jonathan J Wierer

101. 
     Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

     Article • June 2004, SPIE

     Professor Jonathan J Wierer

102. 
     InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

     Article • Applied Physics Letters, May 2004, American Institute of Physics

     Professor Jonathan J Wierer

103. 
     Development of Key Technologies for White Lighting Based on Light-Emitting Diodes (LEDs)

     Article • March 2004, Office of Scientific and Technical Information (OSTI)

     Professor Jonathan J Wierer

104. 
     Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

     Article • Applied Physics Letters, April 2003, American Institute of Physics

     Professor Jonathan J Wierer

105. 
     High Power LEDs - Technology Status and Market Applications

     Article • phys stat sol (a), December 2002, Wiley

     Professor Jonathan J Wierer

106. 
     High-Power III-Nitride Emitters for Solid-State Lighting

     Article • phys stat sol (a), August 2002, Wiley

     Professor Jonathan J Wierer

107. 
     Performance of High-Power AlInGaN Light Emitting Diodes

     Article • phys stat sol (a), November 2001, Wiley

     Professor Jonathan J Wierer

108. 
     High-power AlGaInN flip-chip light-emitting diodes

     Article • Applied Physics Letters, May 2001, American Institute of Physics

     Professor Jonathan J Wierer

109. 
     High-power AlInGaN light-emitting diodes

     Article • May 2001, SPIE

     Professor Jonathan J Wierer

110. 
     High-brightness AlGaInN light-emitting diodes

     Article • April 2000, SPIE

     Professor Jonathan J Wierer

111. 
     Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes

     Article • Applied Physics Letters, February 1999, American Institute of Physics

     Professor Jonathan J Wierer

112. 
     AlxGa1−xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers

     Article • Journal of Applied Physics, November 1998, American Institute of Physics

     Professor Jonathan J Wierer

113. 
     Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions

     Article • Applied Physics Letters, May 1998, American Institute of Physics

     Professor Jonathan J Wierer

114. 
     Transition from edge to vertical cavity operation of tunnel contact AlGaAs–GaAs–InGaAs quantum well heterostructure lasers

     Article • Applied Physics Letters, February 1998, American Institute of Physics

     Professor Jonathan J Wierer

115. 
     Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources

     Article • Applied Physics Letters, December 1997, American Institute of Physics

     Professor Jonathan J Wierer

116. 
     Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents

     Article • Applied Physics Letters, October 1997, American Institute of Physics

     Professor Jonathan J Wierer

117. 
     Photopumped laser operation of an oxide post GaAs–AlAs superlattice photonic lattice

     Article • Applied Physics Letters, March 1997, American Institute of Physics

     Professor Jonathan J Wierer

118. 
     Double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes

     Article • Applied Physics Letters, November 1996, American Institute of Physics

     Professor Jonathan J Wierer

119. 
     Establishment of a dynamic model for the p-Ge far IR laser

     Article • International Journal of Infrared and Millimeter Waves, January 1995, Springer Science + Business Media

     Professor Jonathan J Wierer