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  1. Hybrid structure responsible for improved thermoelectric performance of Sn-incorporated Cu3SbSe4 with a second phase CuSe
  2. High thermoelectric performance of a defect in α-In2Se3-based solid solution upon substitution of Zn for In
  3. Correction: High thermoelectric performance of a defect in α-In2Se3-based solid solution upon substitution of Zn for In
  4. Improvement of the thermoelectric performance of InSe-based alloys doped with Sn
  5. Engineered cation vacancy plane responsible for the reduction in lattice thermal conductivity and improvement in the thermoelectric property of Ga2Te3-based semiconductors
  6. Site occupations of Zn in AgInSe2-based chalcopyrites responsible for modified structures and significantly improved thermoelectric performance
  7. Lattice defects and thermoelectric properties: the case of p-type CuInTe2 chalcopyrite on introduction of zinc
  8. Significantly enhanced thermoelectric figure of merit through Cu, Sb co-substitutions for Te in Ga2Te3