All Stories

  1. Fast non-equilibrium carrier dynamics in polar InGaN/GaN structures with wide quantum wells

    Article • Applied Physics Letters, April 2025, American Institute of Physics

    Jens W. Tomm

  2. In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation

    Article • Applied Physics Letters, September 2020, American Institute of Physics

    Jens W. Tomm

  3. Infrared emission bands and thermal effects for 440-nm-emitting GaN-based laser diodes

    Article • AIP Advances, May 2020, American Institute of Physics

    Jens W. Tomm

  4. Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

    Article • Journal of Applied Physics, May 2019, American Institute of Physics

    Prof. Dr. Markus Weyers, Thomas Elsaesser, Jens W. Tomm

  5. Quantum Confined Laser Devices. Optical Gain and Recombination in Semiconductors.By Peter Blood. Oxford University Press, 2015. Pp. 432. Price GBP 28.99. ISBN 9780199644520

    Article • Journal of Applied Crystallography, June 2016, International Union of Crystallography

    Jens W. Tomm