All Stories

  1. In-situ/operando characterization of FeOx-based chemiresistive sensor of acetone vapours by x-ray absorption spectroscopy
  2. Electrical resistance of alumina is sensitive to exposure to trace concentration of acetone vapours
  3. Response of alumina resistance to trace concentrations of acetone vapors at room temperature
  4. Graphene based hydrogen gas sensors
  5. Tailoring the interparticle distance in Langmuir nanoparticle films
  6. Graphene-based sensors of NO2, H2, acetone, and other gases/vapors: State of the art and realistic outlook
  7. Control of interparticle distance of ordered iron-oxide nanoparticle assemblies by means of surfactant design
  8. Thermal stability of γ-Fe2O3 nanoparticles and their employment for sensing of acetone vapours
  9. Extremely sensitive resistance of indium-oxide film to its deformation
  10. Indium-oxide film can act in the capacity of an extremely sensitive sensor of deformation
  11. Correlation between electrical parameters and defect states of polythiophene:fullerene based solar cell
  12. Few-layer Graphene Langmuir-schaefer Nanofilms for H 2 Gas Sensing
  13. How stretching of a nanoparticle layer affect its resistivity
  14. Towards organic solar cells without the hole transporting layer on the plasmon-enhanced ITO electrode
  15. Sensitivity and long-term stability of γ-Fe2O3 and CoFe2O4 nanoparticle gas sensors for NO2, CO and acetone sensing — A comparative study
  16. Towards new multifunctional coatings for organic photovoltaics
  17. Solid-state sensors of trace concentrations of acetone and NO2 based on nanoparticle films
  18. Nitric Dioxide and Acetone Sensors Based on Iron Oxide Nanoparticles
  19. A disordered layered phase in thin films of sexithiophene
  20. Gas sensing properties and electrical resistance of Langmuir-Blodgett iron oxide nanoparticle arrays
  21. Intrinsic work function of molecular films
  22. Indium on a copper phthalocyanine thin film: Not a reactive system
  23. Band bending in organic films
  24. Identification of particular orbitals in valence band of CuPc
  25. Controlling geometric and electronic properties of highly ordered CuPc thin films
  26. α-Sexithiophene on Cu(110) and Cu(110)–(2×1)O: An STM and NEXAFS study
  27. Optical properties of sexithiophene films grown on ordered and disordered TiO2(110) surfaces
  28. Epitaxial growth of sexithiophene on (110)
  29. Device relevant organic films and interfaces: A surface science approach
  30. Dissociation of sexithiophene on Al(111) surface
  31. On mechanism of the energy level alignment on organics-related interfaces
  32. The electronic band alignment on nanoscopically patterned substrates
  33. Sexithiophene films on ordered and disordered TiO2(110) surfaces: Electronic, structural and morphological properties
  34. Organic Heteroepitaxy:p-Sexiphenyl on Uniaxially Oriented α-Sexithiophene
  35. Electronic and geometric structure of electro-optically active organic films and associated interfaces
  36. Oxygen induced molecular reorientation on aluminum
  37. Methods of observation and elimination of semiconductor defect states
  38. Erratum: “Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure” [J. Appl. Phys. 96, 2716 (2004)]
  39. Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density
  40. Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure
  41. Epitaxial Growth of Sexiphenyl on Al(111):  From Monolayer to Crystalline Films
  42. Semiconductor surface and interface passivation by cyanide treatment
  43. Oxygen as a surfactant for Al contact metallization of organic layers
  44. Structure and morphology of sexiphenyl thin films grown on aluminium (111)
  45. Substrate-Mediated Electronic Structure and Properties of Sexiphenyl Films
  46. Low-energy particle treatment of GaAs surface
  47. A study of Al/Si3N4/ultrathin Si/GaAs structures by DLTS and C–V measurements
  48. Ordered mono- and multilayer films of sexiphenyl on Al(111): a LEED investigation
  49. Acrylic acid nitrile, a film-forming electrolyte component for lithium-ion batteries, which belongs to the family of additives containing vinyl groups
  50. Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias
  51. Reactivity of Au with ultrathin Si layers: A photoemission study
  52. Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces
  53. Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion
  54. Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment
  55. X-ray photoemission and photoreflectance study of Au/ultrathin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfaces
  56. A Role of Ultra Thin Silicon Interlayer in Au/Si/n-GaAs Contacts: Depinning of the GaAs Surface
  57. Schottky barrier height dependence on the silicon interlayer thickness of Au\Si\n-GaAs contacts : chemistry of interface formation study
  58. Electrical characterization of Au/SiOx/n-GaAs junctions
  59. Attempts to correlate hydrogen plasma-induced and Si3N4/GaAs interface-related surface states: a charge deep-level transient spectroscopy study
  60. Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer
  61. A study on thermal emission of charges at Si3N4—GaAs interfaces after annealing in N2 and N2 + H2 mixtures
  62. Influence of plasma on silicon surface during low‐energy plasma deposition process: The comparative study on Si3N4/Si structures
  63. On the accumulation capacitance of Si3N4/Si/GaAs structures fabricated in an electron cyclotron resonance plasma
  64. An interpretation of dlts spectra of Al/Si3N4/ultrathin SI/GaAs structures — Effect of quantum well or interface states?
  65. Properties of metal-semiconductor contacts with plasma deposited silicon nitride interfacial layers
  66. Metal/thin insulator/silicon schottky diodes with plasma deposited silicon nitride interfacial layer