All Stories

  1. Low voltage, high gain inverters based on amorphous zinc tin oxide on flexible substrates

    Article • APL Materials, June 2020, American Institute of Physics

    Holger von Wenckstern

  2. Epitaxial stabilization of single phase κ-(InxGa1−x)2O3 thin films up to x = 0.28 on c-sapphire and κ-Ga2O3(001) templates by tin-assisted VCCS-PLD

    Article • APL Materials, October 2019, American Institute of Physics

    Holger von Wenckstern

  3. Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

    Article • APL Materials, July 2019, American Institute of Physics

    Holger von Wenckstern

  4. Erratum: “Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films” [APL Mater. 7, 022525 (2019)]

    Article • APL Materials, July 2019, American Institute of Physics

    Holger von Wenckstern

  5. Structural, optical, and electrical properties of orthorhombic κ-(InxGa1−x)2O3 thin films

    Article • APL Materials, February 2019, American Institute of Physics

    Holger von Wenckstern

  6. Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

    Article • APL Materials, February 2019, American Institute of Physics

    Thorsten Schultz, Holger von Wenckstern

  7. Structural and optical properties of (In,Ga)2O3 thin films and characteristics of Schottky contacts thereon

    Article • Semiconductor Science and Technology, January 2015, Institute of Physics Publishing

    Holger von Wenckstern

  8. Continuous composition spread using pulsed-laser deposition with a single segmented target

    Article • CrystEngComm, January 2013, Royal Society of Chemistry

    Holger von Wenckstern