All Stories

  1. Gas phase and surface processes of SiC N O film formation by parallel plate plasma-enhanced chemical vapor deposition without heat assistance

    Article • Materials Chemistry and Physics, August 2025, Elsevier

    Professor HITOSHI HABUKA

  2. Multimolecular interactions for SiC N O film formation by parallel plate plasma-enhanced chemical vapor deposition without heat assistance

    Article • Materials Chemistry and Physics, February 2023, Elsevier

    Professor HITOSHI HABUKA

  3. Chlorine Trifluoride Gas Etching Design for Quickly and Uniformly Removing a Thick C-Face 4H-Silicon Carbide Layer

    Article • ECS Advances, November 2022, The Electrochemical Society

    Professor HITOSHI HABUKA

  4. Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor

    Article • ECS Journal of Solid State Science and Technology, August 2022, The Electrochemical Society

    Professor HITOSHI HABUKA

  5. Water Flow Improvement by Pinhole Outlet in Batch-Type Wet Cleaning Bath for Large-Diameter Wafers

    Article • ECS Journal of Solid State Science and Technology, July 2022, The Electrochemical Society

    Professor HITOSHI HABUKA

  6. Chemical Conditions of SiCNO Film Exposed to ClF3 Gas

    Article • ECS Journal of Solid State Science and Technology, October 2021, The Electrochemical Society

    Professor HITOSHI HABUKA

  7. Boron-Silicon Film Chemical Vapor Deposition Using Boron Trichloride, Dichlorosilane and Monomethylsilane Gases

    Article • ECS Journal of Solid State Science and Technology, June 2021, The Electrochemical Society

    Professor HITOSHI HABUKA

  8. Anticorrosive Behavior of Aluminum Nitride Surface Exposed to Chlorine Trifluoride Gas at High Temperatures

    Article • ECS Journal of Solid State Science and Technology, March 2021, The Electrochemical Society

    Professor HITOSHI HABUKA

  9. Design of a Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Process Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat

    Article • ECS Journal of Solid State Science and Technology, October 2020, The Electrochemical Society

    Professor HITOSHI HABUKA

  10. Temperature Influence on Organic Molecular Interaction on Silicon Oxide Surface In Situ Measured Utilizing a Quartz Crystal Microbalance

    Article • ECS Journal of Solid State Science and Technology, October 2020, The Electrochemical Society

    Professor HITOSHI HABUKA

  11. Deposition and etching behaviour of boron trichloride gas at silicon surface

    Article • Journal of Crystal Growth, January 2020, Elsevier

    Professor HITOSHI HABUKA

  12. High Temperature SiC Reactor Cleaning Using Chlorine Trifluoride Gas Achieved by Purified Pyrolytic Carbon Coating Film

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Professor HITOSHI HABUKA

  13. Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Professor HITOSHI HABUKA

  14. Exposure of Tantalum Carbide, Silicon Nitride and Aluminum Nitride to Chlorine Trifluoride Gas

    Article • ECS Journal of Solid State Science and Technology, January 2019, The Electrochemical Society

    Professor HITOSHI HABUKA

  15. High-Temperature Reactor Cleaning Using Chlorine Trifluoride Gas for Silicon Carbide Chemical Vapor Deposition

    Article • ECS Journal of Solid State Science and Technology, January 2019, The Electrochemical Society

    Professor HITOSHI HABUKA

  16. Influence of Metal and Polymer Substrate on SiCxNyOz Film Formation by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

    Article • ECS Journal of Solid State Science and Technology, January 2019, The Electrochemical Society

    Professor HITOSHI HABUKA

  17. Behavior of Viscous Liquid Byproduct Formed in Exhaust Tube by Silicon Carbide Epitaxial Growth

    Article • ECS Journal of Solid State Science and Technology, January 2019, The Electrochemical Society

    Professor HITOSHI HABUKA

  18. Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases

    Article • Semiconductor Science and Technology, July 2018, Institute of Physics Publishing

    Professor HITOSHI HABUKA

  19. 4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Professor HITOSHI HABUKA

  20. Water Outlet Design of Wet Cleaning Bath for 300-mm Diameter Silicon Wafers

    Article • ECS Journal of Solid State Science and Technology, January 2018, The Electrochemical Society

    Professor HITOSHI HABUKA

  21. Susceptor Coating Materials Applicable for SiC Reactor Cleaning

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Professor HITOSHI HABUKA

  22. Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas

    Article • ECS Journal of Solid State Science and Technology, January 2017, The Electrochemical Society

    Professor HITOSHI HABUKA

  23. Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition of SiCxNyOzFilm Using Monomethylsilane, Nitrogen and Argon

    Article • ECS Journal of Solid State Science and Technology, January 2017, The Electrochemical Society

    Professor HITOSHI HABUKA

  24. Quick Cleaning Process for Silicon Carbide Chemical Vapor Deposition Reactor

    Article • ECS Journal of Solid State Science and Technology, January 2017, The Electrochemical Society

    Professor HITOSHI HABUKA

  25. In Situ Cleaning Process of Silicon Carbide Epitaxial Reactor for Removing Film-Type Deposition Formed on Susceptor

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Professor HITOSHI HABUKA, Yuuki Ishida

  26. Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Professor HITOSHI HABUKA

  27. Non-heat assistance chemical vapor deposition of amorphous silicon carbide using monomethylsilane gas under argon plasma

    Article • Surface and Coatings Technology, January 2016, Elsevier

    Professor HITOSHI HABUKA

  28. Cleaning Process for Using Chlorine Trifluoride Gas Silicon Carbide Chemical Vapor Deposition Reactor

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Professor HITOSHI HABUKA, Yuuki Ishida

  29. Chlorine Trifluoride Gas Transport and Etching Rate Distribution in Silicon Carbide Dry Etcher

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Professor HITOSHI HABUKA

  30. Surface and gas phase reactions induced in a trichlorosilane–SiH x system for silicon film deposition

    Article • Surface and Coatings Technology, June 2015, Elsevier

    Professor HITOSHI HABUKA

  31. Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas

    Article • Journal of Crystal Growth, September 2014, Elsevier

    Professor HITOSHI HABUKA

  32. Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

    Article • Japanese Journal of Applied Physics, April 2014, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  33. Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Professor HITOSHI HABUKA

  34. Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    Professor HITOSHI HABUKA

  35. Cleaning Process Applicable to Silicon Carbide Chemical Vapor Deposition Reactor

    Article • ECS Journal of Solid State Science and Technology, October 2013, The Electrochemical Society

    Professor HITOSHI HABUKA, Yuuki Ishida

  36. Langasite crystal microbalance frequency behavior over wide gas phase conditions for chemical vapor deposition

    Article • Surface and Coatings Technology, September 2013, Elsevier

    Professor HITOSHI HABUKA

  37. Numerical Calculation Model of Single Wafer Wet Etcher Using Swinging Nozzle

    Article • ECS Transactions, August 2013, The Electrochemical Society

    Professor HITOSHI HABUKA

  38. Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

    Article • Materials Science in Semiconductor Processing, June 2013, Elsevier

    Professor HITOSHI HABUKA

  39. Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

    Article • Advanced Materials Research, May 2013, Trans Tech Publications

    Professor HITOSHI HABUKA

  40. Chemical vapor deposition of amorphous silicon carbide thin films on metal surfaces using monomethylsilane gas at low temperatures

    Article • Surface and Coatings Technology, February 2013, Elsevier

    Professor HITOSHI HABUKA

  41. Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    Professor HITOSHI HABUKA

  42. Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride Gas

    Article • ECS Journal of Solid State Science and Technology, January 2013, The Electrochemical Society

    Professor HITOSHI HABUKA

  43. Silicon Chemical Vapor Deposition Process Using a Half-Inch Silicon Wafer for Minimal Manufacturing System

    Article • Physics Procedia, January 2013, Elsevier

    Professor HITOSHI HABUKA

  44. Surface Chemical Reaction Model of Silicon Dioxide Film Etching by Dilute Hydrogen Fluoride Using a Single Wafer Wet Etcher

    Article • ECS Journal of Solid State Science and Technology, January 2013, The Electrochemical Society

    Professor HITOSHI HABUKA

  45. Numerical calculation model of a single wafer wet etcher using a swinging nozzle

    Article • Materials Science in Semiconductor Processing, October 2012, Elsevier

    Professor HITOSHI HABUKA

  46. Density of Etch Pits on C-Face 4H-SiC Surface Produced by ClF3 Gas

    Article • Materials Science Forum, July 2012, Trans Tech Publications

    Professor HITOSHI HABUKA

  47. Density and Behavior of Etch Pits on C-Face 4H-SiC Surface Produced by CIF3 Gas

    Article • Materials Science Forum, May 2012, Trans Tech Publications

    Professor HITOSHI HABUKA

  48. Concentration of Three Organic Compounds Influencing each other on Silicon Surface

    Article • Solid State Phenomena, April 2012, Trans Tech Publications

    Professor HITOSHI HABUKA

  49. Silicon Epitaxial Growth Rate and Transport Phenomena in a Vertical Stacked-Type Multi-Wafer Reactor

    Article • Japanese Journal of Applied Physics, January 2012, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  50. Langasite Crystal Microbalance Used for In-Situ Monitoring of Amorphous Silicon Carbide Film Deposition

    Article • ECS Journal of Solid State Science and Technology, January 2012, The Electrochemical Society

    Professor HITOSHI HABUKA

  51. Room Temperature Process for Chemical Vapor Deposition of Amorphous Silicon Carbide Thin Film Using Monomethylsilane Gas

    Article • MRS Proceedings, January 2012, Cambridge University Press

    Professor HITOSHI HABUKA

  52. Room temperature process for chemical vapor deposition of amorphous silicon carbide thin film using monomethylsilane gas

    Article • Surface and Coatings Technology, December 2011, Elsevier

    Professor HITOSHI HABUKA

  53. Langasite Crystal Microbalance for Development of Reactive Surface Preparation of Silicon Carbide Film Deposition from Monomethylsilane Gas

    Article • Japanese Journal of Applied Physics, September 2011, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  54. Low Temperature SiC Film Deposition Using Trichlorosilane Gas and Monomethylsilane Gas

    Article • Journal of Nanoscience and Nanotechnology, September 2011, American Scientific Publishers

    Professor HITOSHI HABUKA

  55. Silicon epitaxial growth process using trichlorosilane gas in a single-wafer high-speed substrate rotation reactor

    Article • Journal of Crystal Growth, July 2011, Elsevier

    Professor HITOSHI HABUKA

  56. Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

    Article • Materials Science Forum, March 2011, Trans Tech Publications

    Professor HITOSHI HABUKA

  57. Silicon Surface Morphology after Annealing in Ambient Hydrogen Containing a Trace Amount of Hydrogen Halide Gas

    Article • Japanese Journal of Applied Physics, February 2011, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  58. Advance of Atomic Layer Deposition in Semiconductor Materials Manufacturing Process: Cleaning Technology for Thin Film Formation Reactor

    Article • Journal of the Vacuum Society of Japan, January 2011, The Vacuum Society of Japan

    Professor HITOSHI HABUKA

  59. Mechanism of Silicon Carbide Film Deposition at Room Temperature Using Monomethylsilane Gas

    Article • Journal of The Electrochemical Society, January 2011, The Electrochemical Society

    Professor HITOSHI HABUKA

  60. Water Motion over a Wafer Surface Rotating in a Single-Wafer Wet Cleaner

    Article • January 2011, The Electrochemical Society

    Professor HITOSHI HABUKA

  61. Water Motion over a Wafer Surface Rotating in a Single-Water Wet Cleaner

    Article • Journal of The Electrochemical Society, January 2011, The Electrochemical Society

    Professor HITOSHI HABUKA

  62. 4H-SiC Surface Morphology Etched Using ClF3 Gas

    Article • Materials Science Forum, April 2010, Trans Tech Publications

    Professor HITOSHI HABUKA

  63. Dominant Forces for Driving Bubbles in a Wet Cleaning Bath Using Megasonic Wave

    Article • Journal of The Electrochemical Society, January 2010, The Electrochemical Society

    Professor HITOSHI HABUKA

  64. Molecular Interaction Radii and Rate Constants for Clarifying Organic Compound Physisorption on Silicon Surface

    Article • Journal of The Electrochemical Society, January 2010, The Electrochemical Society

    Professor HITOSHI HABUKA

  65. Silicon carbide film deposition at low temperatures using monomethylsilane gas

    Article • Surface and Coatings Technology, January 2010, Elsevier

    Professor HITOSHI HABUKA

  66. Hafnium Oxide Film Etching Using Hydrogen Chloride Gas

    Article • Japanese Journal of Applied Physics, December 2009, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  67. Etching Rate of Silicon Dioxide Using Chlorine Trifluoride Gas

    Article • Japanese Journal of Applied Physics, February 2009, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  68. Atomospheric Pressure SiC Film Deposition at Low Temperatures Using SiH

    Article • January 2009, The Electrochemical Society

    Professor HITOSHI HABUKA

  69. Hafnium Oxide Etching Using Hydrogen Chloride Gas

    Article • January 2009, The Electrochemical Society

    Professor HITOSHI HABUKA

  70. Temperature-Dependent Behavior of 4H-Silicon Carbide Surface Morphology Etched Using Chlorine Trifluoride Gas

    Article • Journal of The Electrochemical Society, January 2009, The Electrochemical Society

    Professor HITOSHI HABUKA

  71. Water and Bubble Motions Under Megasonic Wave in a Silicon Wafer Wet Cleaning Bath

    Article • January 2009, The Electrochemical Society

    Professor HITOSHI HABUKA

  72. Heat Transport and Temperature Gradient in Silicon-on-Insulator Wafer during Flash Lamp Annealing Process

    Article • Japanese Journal of Applied Physics, August 2008, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  73. Decarbonation and Pore Structural Change of Ca-Solid Reactant for CaO/CO2 Chemical Heat Pump

    Article • JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, January 2008, Society of Chemical Engineers, Japan

    Professor HITOSHI HABUKA

  74. Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifloride Gas

    Article • January 2008, The Electrochemical Society

    Professor HITOSHI HABUKA

  75. Heat Transport Analysis for Flash Lamp Annealing

    Article • Japanese Journal of Applied Physics, March 2007, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  76. Polycrystalline silicon carbide film deposition using monomethylsilane and hydrogen chloride gases

    Article • Journal of Crystal Growth, March 2007, Elsevier

    Professor HITOSHI HABUKA

  77. Water Motion in a Water Curtain Head for Cleaning a Large Glass Plate

    Article • Japanese Journal of Applied Physics, February 2007, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  78. Carbonation/Decarbonation of Ca-Solid Reactant Derived from Natural Limestone for Thermal-Energy Storage and Temperature Upgrade

    Article • JOURNAL OF CHEMICAL ENGINEERING OF JAPAN, January 2007, Society of Chemical Engineers, Japan

    Professor HITOSHI HABUKA

  79. In-Situ Measurement Method and Rate Theory for Clarifying Multi-Component Organic Compounds Adsorption and Desorption on Silicon Surface

    Article • January 2007, The Electrochemical Society

    Professor HITOSHI HABUKA

  80. Physisorption and Desorption of Diethyl Phthalate and Isopropanol on a Silicon Surface

    Article • Journal of The Electrochemical Society, January 2007, The Electrochemical Society

    Professor HITOSHI HABUKA

  81. Small-Batch Reactor Development for Silicon Epitaxial Film Growth Based on Theory of Transport Phenomena

    Article • January 2007, The Electrochemical Society

    Professor HITOSHI HABUKA

  82. Etch rate and surface morphology of polycrystalline β-silicon carbide using chlorine trifluoride gas

    Article • Thin Solid Films, August 2006, Elsevier

    Professor HITOSHI HABUKA

  83. Air Flow in Square Quartz Plate Spin Cleaner

    Article • Japanese Journal of Applied Physics, November 2005, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  84. Dominant rate process of silicon surface etching by hydrogen chloride gas

    Article • Thin Solid Films, October 2005, Elsevier

    Professor HITOSHI HABUKA

  85. Highly Concentrated Ozone Gas for Preparing Wettable Polyimide Surface

    Article • Japanese Journal of Applied Physics, July 2005, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  86. Silicon Carbide Etching Using Chlorine Trifluoride Gas

    Article • Japanese Journal of Applied Physics, March 2005, Japan Society of Applied Physics

    Professor HITOSHI HABUKA

  87. Quartz Crystal Microbalance for Silicon Surface Organic Contamination

    Article • Journal of The Electrochemical Society, January 2005, The Electrochemical Society

    Professor HITOSHI HABUKA

  88. Gas Velocity Influence on Silicon Surface Organic Contamination Evaluated Using Quartz Crystal Microbalance

    Article • Journal of The Electrochemical Society, January 2005, The Electrochemical Society

    Professor HITOSHI HABUKA

  89. Heat Balance Evaluation for Rapid Thermal Processing System Design

    Article • Journal of The Electrochemical Society, January 2005, The Electrochemical Society

    Professor HITOSHI HABUKA

  90. Formation mechanism of local thickness profile of silicon epitaxial film

    Article • Journal of Crystal Growth, May 2004, Elsevier

    Professor HITOSHI HABUKA

  91. Silicon Etch Rate Using Chlorine Trifluoride

    Article • Journal of The Electrochemical Society, January 2004, The Electrochemical Society

    Professor HITOSHI HABUKA

  92. Water Motion in Carrierless Wet Station

    Article • Journal of The Electrochemical Society, January 2004, The Electrochemical Society

    Professor HITOSHI HABUKA

  93. Airborne Organic Contamination Behavior on Silicon Wafer Surface

    Article • Journal of The Electrochemical Society, January 2003, The Electrochemical Society

    Professor HITOSHI HABUKA

  94. High-Performance Silicon Etching Using Chlorine Trifluoride Gas

    Article • Journal of The Electrochemical Society, January 2003, The Electrochemical Society

    Professor HITOSHI HABUKA

  95. Hot-wall and cold-wall environments for silicon epitaxial film growth

    Article • Journal of Crystal Growth, February 2001, Elsevier

    Professor HITOSHI HABUKA

  96. Adsorption and Desorption Rate of Multicomponent Organic Species on Silicon Wafer Surface

    Article • Journal of The Electrochemical Society, January 2001, The Electrochemical Society

    Professor HITOSHI HABUKA

  97. Design of a Rapid Thermal Processing System Using a Reflection-Resolved Ray Tracing Method

    Article • Journal of The Electrochemical Society, January 2001, The Electrochemical Society

    Professor HITOSHI HABUKA

  98. Development of Evaluation Method for Organic Contamination on Silicon Wafer Surfaces

    Article • Journal of The Electrochemical Society, January 2001, The Electrochemical Society

    Professor HITOSHI HABUKA

  99. Model of boron incorporation into silicon epitaxial film in a B2H6–SiHCl3–H2 system

    Article • Journal of Crystal Growth, January 2001, Elsevier

    Professor HITOSHI HABUKA

  100. Instability of diborane gas in silicon epitaxial film growth

    Article • Journal of Crystal Growth, February 2000, Elsevier

    Professor HITOSHI HABUKA

  101. Rate Theory of Multicomponent Adsorption of Organic Species on Silicon Wafer Surface

    Article • Journal of The Electrochemical Society, January 2000, The Electrochemical Society

    Professor HITOSHI HABUKA

  102. Thermal Conditions in Rapid Thermal Processing System Using Circular Infrared Lamp

    Article • Journal of The Electrochemical Society, January 2000, The Electrochemical Society

    Professor HITOSHI HABUKA

  103. Chemical process of silicon epitaxial growth in a SiHCl3–H2 system

    Article • Journal of Crystal Growth, November 1999, Elsevier

    Professor HITOSHI HABUKA

  104. Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3H2 system under atmospheric pressure

    Article • Journal of Crystal Growth, November 1996, Elsevier

    Professor HITOSHI HABUKA