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  1. High internal quantum efficiency and optically pumped stimulated emission in AlGaN-based UV-C multiple quantum wells
  2. Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells
  3. Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K
  4. Effects of exciton localization on internal quantum efficiency of InGaN nanowires
  5. Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells
  6. Huge binding energy of localized biexcitons in Al-rich AlxGa1−xN ternary alloys
  7. Silicon concentration dependence of optical polarization in AlGaN epitaxial layers
  8. Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
  9. Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers
  10. Photoluminescence from highly excited AlN epitaxial layers
  11. Localization-induced inhomogeneous screening of internal electric fields in AlGaN-based quantum wells
  12. Population dynamics of localized biexcitons in AlxGa1−xN ternary alloys