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  1. The outstanding properties of graphene-insulator-semiconductor (GIS) test structures for photoelectric determination of semiconductor devices band diagram
  2. Photoelectric Phenomena and Photoelectric Characterization Methods of the MOS System - Basics and New Developments
  3. Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties
  4. Distributions of electric parameters in MOS structures on 3C-SiC substrate
  5. Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures
  6. New applications of internal photoemission to determine basic MOS system parameters
  7. Effects of stress annealing on the index of refraction of SiO 2 layers in MOS devices
  8. Theory and applications of internal photoemission in the MOS system at low electric fields