All Stories

  1. An integrated Ka-band VCO and divide-by-4 frequency divider with 30.2% tuning range in 90-nm CMOS

    Article • Microwave and Optical Technology Letters, March 2017, Wiley

    Hamed Alsuraisry

  2. A 6-GHz spread spectrum clock generation with EMI reduction of 30.2 dB for SATA-III applications

    Article • Microwave and Optical Technology Letters, January 2017, Wiley

    Hamed Alsuraisry

  3. Millimeter-wave ultra-broadband IQ transceiver design - current status and future outlook

    Article • January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Hamed Alsuraisry

  4. Ka-band up-link CMOS/GaAs power amplifier design for satellite-based wireless sensor

    Article • January 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Hamed Alsuraisry

  5. A low-power Ku-band transformer-based receiver using low-cost 180nm CMOS for IoT applications

    Article • August 2016, Institute of Electrical & Electronics Engineers (IEEE)

    Hamed Alsuraisry

  6. 5.3 GHz 42% PAE class-E power amplifier with 532 mW/mm2 power area density in 180 nm CMOS process

    Article • Electronics Letters, July 2016, the Institution of Engineering and Technology (the IET)

    Ming-Hang Wu, Po-Shin Huang, Hamed Alsuraisry

  7. A X-band digitally controlled 5-bit phase shifter in 0.18-μm CMOS technology

    Article • December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Hamed Alsuraisry

  8. A X-band frequency synthesizer for FMCW radar in 180-nm CMOS

    Article • December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Hamed Alsuraisry

  9. A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

    Article • December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Hamed Alsuraisry