All Stories

  1. Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Gilyong Chung

  2. Impact of Subsurface Damage on SiC Wafer Shape

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Gilyong Chung

  3. Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Gilyong Chung, Ouloide Yannick Goue

  4. Optimization of 150 mm 4H SiC Substrate Crystal Quality

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Gilyong Chung, Ouloide Yannick Goue

  5. Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Gilyong Chung

  6. Large Area 4H SiC Products for Power Electronic Devices

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Gilyong Chung

  7. Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Gilyong Chung

  8. Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    Ouloide Yannick Goue, Gilyong Chung

  9. Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Gilyong Chung

  10. Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    Gilyong Chung