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  1. Sub-μm features patterned with laser interference lithography for the epitaxial lateral overgrowth of α-Ga2O3 via mist chemical vapor deposition

    Article • Applied Physics Letters, July 2021, American Institute of Physics

    Giang T. Dang

  2. Conductive Si-doped α-(AlxGa1−x)2O3 thin films with the bandgaps up to 6.22 eV

    Article • AIP Advances, November 2020, American Institute of Physics

    Giang T. Dang

  3. Conductive tin-doped alpha-Ga2O3 on different AlGaO buffers

    Article • APL Materials, October 2020, American Institute of Physics

    Giang T. Dang