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  1. Metal interdiffusion enhanced WOx/CuOx heterojunction optoelectronic memristive synapses for face recognition application

    Article • APL Materials, May 2025, American Institute of Physics

    Firman Simanjuntak

  2. Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices

    Article • APL Materials, March 2022, American Institute of Physics

    Firman Simanjuntak, Dr Julianna Panidi

  3. Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

    Article • Applied Physics Letters, August 2020, American Institute of Physics

    Firman Simanjuntak