All Stories

  1. Revealing the role of Σ3{112} Si grain boundary local structures in impurity segregation

    Article • Journal of Applied Physics, August 2022, American Institute of Physics

    Elena Degoli

  2. The role of Si vacancies in the segregation of O, C, and N at silicon grain boundaries: An ab initio study

    Article • The Journal of Chemical Physics, November 2021, American Institute of Physics

    Elena Degoli

  3. Ab Initio Study of Electronic Transport in Cubic-HfO2 Grain Boundaries

    Article • Journal of Nanomaterials, January 2017, Hindawi Publishing Corporation

    Elena Degoli, Prof. Elena Degoli