All Stories

  1. Understanding carrier dynamics in GaN-based blue light-emitting diodes by self-consistent analysis of current, voltage, internal quantum efficiency, and forward capacitance

    Article • Journal of Applied Physics, June 2025, American Institute of Physics

    Professor Dong-Soo Shin

  2. GaAs-based red micro-light-emitting diodes with an oxide perimeter region for improved external quantum efficiency

    Article • AIP Advances, October 2024, American Institute of Physics

    Professor Dong-Soo Shin

  3. Temperature dependence of the piezoelectric field in GaInN/GaN quantum wells and its impact on the device performance

    Article • Journal of Applied Physics, August 2024, American Institute of Physics

    Professor Dong-Soo Shin

  4. Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress

    Article • Applied Physics Letters, July 2022, American Institute of Physics

    Professor Dong-Soo Shin

  5. Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization

    Article • Nanophotonics, September 2018, De Gruyter

    Professor Dong-Soo Shin

  6. Enhancement in third-order output intercept point of high-power photodiodes by nonlinear voltage- and current-dependent responsivities

    Article • Electronics Letters, February 2015, the Institution of Engineering and Technology (the IET)

    Professor Dong-Soo Shin

  7. Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes

    Article • Japanese Journal of Applied Physics, December 2014, Japan Society of Applied Physics

    Professor Dong-Soo Shin

  8. Measurement of piezoelectric field in single- and double-quantum-well green LEDs using electroreflectance spectroscopy

    Article • Japanese Journal of Applied Physics, August 2014, Japan Society of Applied Physics

    Professor Dong-Soo Shin