All Stories

  1. High-efficiency ultrafast optical-to-electrical converters based on InAs nanowire-plasmonic arrays

    Article • Optics Letters, September 2019, Optical Society of America (OSA)

    Mr Dingkun Ren

  2. Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation

    Article • Japanese Journal of Applied Physics, August 2019, Japan Society of Applied Physics

    Mr Dingkun Ren

  3. Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

    Article • Optical Materials Express, March 2018, Optical Society of America (OSA)

    Mr Dingkun Ren

  4. Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers

    Article • February 2018, SPIE

    Mr Dingkun Ren

  5. Numerical analysis of nanowire surface recombination using a three-dimensional transient model

    Article • February 2018, SPIE

    Mr Dingkun Ren

  6. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

    Article • Nanotechnology, January 2018, Institute of Physics Publishing

    Mr Dingkun Ren

  7. Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model

    Article • Nanoscale, January 2018, Royal Society of Chemistry

    Mr Dingkun Ren

  8. Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb

    Article • Crystals, October 2017, MDPI AG

    Mr Dingkun Ren

  9. Optical spectroscopy of p-GaAs nanopillars on Si for monolithic integrated light sources

    Article • February 2017, SPIE

    Mr Dingkun Ren

  10. Selective-area InAsSb Nanowires on InP for 3 – 5 μm Mid-wavelength Infrared Optoelectronics

    Article • MRS Advances, January 2017, Cambridge University Press

    Mr Dingkun Ren

  11. Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates

    Article • Nanoscale, January 2017, Royal Society of Chemistry

    Mr Dingkun Ren