All Stories

  1. Fundamental understanding of the development process for metal oxide photoresists
  2. Tight-pitch contact-hole patterns in EUV lithography
  3. Application of new development technology to ultra-narrow pitch patterns formed by electron beam lithography
  4. Coater/developer-based patterning techniques to improve tight pitches towards high-NA EUV
  5. Latest advances in EUV patterning for preparation of high numerical aperture EUV
  6. Advanced processes in metal-oxide resists for high-NA EUV lithography
  7. Roughness improvement by post-development treatment of CAR for high-NA EUV lithography
  8. Coater/developer-based patterning techniques to achieve tight pitches with 0.33 NA single exposure
  9. Holistic litho-etch approach towards high NA EUV challenges
  10. Advanced development for contact-holes of metal-oxide resists
  11. Advanced development methods for high-NA EUV lithography
  12. Establishment of new process technology for EUV lithography
  13. Recent advances in EUV patterning in preparation towards high-NA EUV
  14. Coater/developer-based techniques to improve high-resolution EUV patterning
  15. Outlook for high-NA EUV patterning: a holistic patterning approach to address upcoming challenges
  16. Approaches to enable patterning of tight pitches towards high NA EUV
  17. Addressing EUV patterning challenges towards the limits of NA 0.33 EUV exposure
  18. EUV resist performance enhancement by UV flood exposure for high NA EUV lithography
  19. EUV resist chemical gradient enhancement by UV flood exposure for improvement in EUV resist resolution, process control, roughness, sensitivity and stochastic defectivity
  20. PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO) (Conference Presentation)
  21. Calibrated PSCAR stochastic simulation
  22. High-resist sensitization by pattern and flood combination lithography
  23. Relation between sensitivity and resolution in polymer bound PAGs and polymer blend PAGs