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  1. Tensile-strained Ge/SiGe multiple quantum well microdisks
  2. Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors
  3. Strained Pseudomorphic Ge1–xSnx Multiple Quantum Well Microdisk Using SiNy Stressor Layer
  4. Core-Shell Germanium/Germanium–Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence
  5. Optimization of TCR and heat transport in group-IV multiple-quantum-well microbolometers
  6. Optimizing undercut in highly-stressed Ge0.934Sn0.066 microdisk resonators
  7. Tensile-strained GeSn photodetectors with conformal nitride stressor
  8. Electromodulation spectroscopy of direct optical transitions in Ge1−xSnx layers under hydrostatic pressure and built-in strain
  9. Dry-wet digital etching of Ge1−xSnx
  10. Photoluminescence from suspended Ge/SiGe quantum-well microdisks
  11. Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon
  12. A new electro-absorption modulator structure based on Ge/SiGe coupled quantum wells for on-chip optical interconnects