All Stories

  1. New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Christian Heidorn

  2. Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Christian Heidorn, Dr. Michael Krieger

  3. Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs

    Article • Materials Science Forum, June 2018, Trans Tech Publications

    Christian Heidorn

  4. Investigation on Wet Etching 4H-SiC Damaged by Ion Implantation

    Article • Materials Science Forum, May 2017, Trans Tech Publications

    Christian Heidorn