All Stories

  1. Efficiency cliff in scaling InGaN light-emitting diodes down to submicron

    Article • Applied Physics Letters, June 2025, American Institute of Physics

    Can Bayram

  2. Efficiency droop contributors in InGaN green light emitting diodes

    Article • Applied Physics Letters, May 2025, American Institute of Physics

    Can Bayram

  3. Record performance in intrinsic, impurity-free lateral diamond photoconductive semiconductor switches

    Article • Applied Physics Letters, April 2025, American Institute of Physics

    Can Bayram

  4. High Field Transport in (Ultra) Wide Bandgap Semiconductors: Diamond Versus Cubic GaN

    Article • IEEE Transactions on Electron Devices, September 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  5. High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

    Article • IEEE Electron Device Letters, June 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  6. Green-emitting cubic GaN/In0.16Ga0.84N/GaN quantum well with 32% internal quantum efficiency at room temperature

    Article • Applied Physics Letters, January 2024, American Institute of Physics

    Can Bayram

  7. Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)

    Article • IEEE Electron Device Letters, October 2023, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  8. Design tradeoffs between traditional hexagonal and emerging cubic InXGa(1–X)N/GaN-based green light-emitting diodes

    Article • Journal of the Optical Society of America B, April 2023, Optical Society of America (OSA)

    Can Bayram

  9. Low temperature absolute internal quantum efficiency of InGaN-based light-emitting diodes

    Article • Applied Physics Letters, February 2023, American Institute of Physics

    Can Bayram

  10. Structural and optical properties of cubic GaN on U-grooved Si (100)

    Article • Applied Physics Letters, July 2022, American Institute of Physics

    Can Bayram

  11. Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes

    Article • IEEE Transactions on Electron Devices, June 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  12. Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes

    Article • Journal of Applied Physics, May 2022, American Institute of Physics

    Bohao Wu, Can Bayram

  13. Effect of Auger Electron–Hole Asymmetry on the Efficiency Droop in InGaN Quantum Well Light-Emitting Diodes

    Article • IEEE Journal of Quantum Electronics, February 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  14. Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing

    Article • IEEE Transactions on Electron Devices, July 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  15. Phonon-assisted reduction of hot spot temperature in AlInN ternaries

    Article • Journal of Physics D Applied Physics, June 2020, Institute of Physics Publishing

    Can Bayram

  16. Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si

    Article • Journal of Physics Photonics, June 2020, Institute of Physics Publishing

    Can Bayram

  17. Cp2Mg-induced transition metal ion contamination and performance loss in MOCVD-grown blue emitting InGaN/GaN multiple quantum wells

    Article • Applied Physics Letters, May 2020, American Institute of Physics

    Can Bayram

  18. Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory

    Article • ACS Omega, January 2020, American Chemical Society (ACS)

    Can Bayram

  19. Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance

    Article • Journal of Applied Physics, November 2019, American Institute of Physics

    Can Bayram

  20. Investigation of annealed, thin(∼2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies

    Article • Materials Research Express, August 2019, Institute of Physics Publishing

    Can Bayram

  21. Pushing the Limits of Electron and Photon Interactions With Matter [Guest Editorial]

    Article • IEEE Nanotechnology Magazine, August 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  22. Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations

    Article • Scientific Reports, April 2019, Springer Science + Business Media

    Can Bayram

  23. Novel Semiconductor Quantum Devices Shaping Our Century [Guest Editorial]

    Article • IEEE Nanotechnology Magazine, April 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  24. Comparison of structural and optical properties of blue emitting In0.15Ga0.85N/GaN multi-quantum-well layers grown on sapphire and silicon substrates

    Article • AIP Advances, February 2019, American Institute of Physics

    Can Bayram

  25. Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

    Article • Scientific Reports, October 2018, Springer Science + Business Media

    Can Bayram

  26. High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)

    Article • ACS Photonics, January 2018, American Chemical Society (ACS)

    Can Bayram

  27. GaN Devices on a 200 mm Si Platform Targeting Heterogeneous Integration

    Article • IEEE Electron Device Letters, August 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  28. Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model

    Article • Journal of Applied Physics, June 2017, American Institute of Physics

    Can Bayram

  29. Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation

    Article • Journal of Physics D Applied Physics, June 2017, Institute of Physics Publishing

    Can Bayram

  30. Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

    Article • Journal of Physics D Applied Physics, January 2017, Institute of Physics Publishing

    Can Bayram

  31. Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

    Article • Scientific Reports, November 2016, Springer Science + Business Media

    Can Bayram

  32. Thermal resistance optimization of GaN/substrate stacks considering thermal boundary resistance and temperature-dependent thermal conductivity

    Article • Applied Physics Letters, October 2016, American Institute of Physics

    Can Bayram

  33. Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)

    Article • Applied Physics Letters, July 2016, American Institute of Physics

    Can Bayram

  34. Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100)

    Article • Journal of Applied Physics, July 2016, American Institute of Physics

    Can Bayram

  35. Vertical thinking in blue light emitting diodes: GaN-on-graphene technology

    Article • March 2015, SPIE

    Can Bayram

  36. Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100)

    Article • February 2015, SPIE

    Can Bayram

  37. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

    Article • Nature Communications, September 2014, Springer Science + Business Media

    Can Bayram

  38. Gallium Nitride: Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014)

    Article • Advanced Functional Materials, July 2014, Wiley

    Can Bayram

  39. Advanced flexible electronics: challenges and opportunities

    Article • June 2014, SPIE

    Can Bayram

  40. Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy

    Article • Advanced Functional Materials, April 2014, Wiley

    Can Bayram

  41. Vertical Light-Emitting Diode Fabrication by Controlled Spalling

    Article • Applied Physics Express, November 2013, Institute of Physics Publishing

    Can Bayram

  42. Flexible InGaP/(In)GaAs tandem solar cells with very high specific power

    Article • June 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  43. Flexible Solar Cells: Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic (Adv. Energy Mater. 5/2013)

    Article • Advanced Energy Materials, May 2013, Wiley

    Can Bayram

  44. (Invited) New Paradigms for Cost-Effective III-V Photovoltaic Technology

    Article • ECS Transactions, April 2013, The Electrochemical Society

    Can Bayram

  45. Engineering future light emitting diodes and photovoltaics with inexpensive materials:Integrating ZnO and Si into GaN-based devices

    Article • March 2013, SPIE

    Can Bayram

  46. Gallium nitride on silicon for consumer and scalable photonics

    Article • February 2013, SPIE

    Can Bayram

  47. Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

    Article • Applied Physics Letters, January 2013, American Institute of Physics

    Can Bayram

  48. Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

    Article • Advanced Energy Materials, December 2012, Wiley

    Can Bayram

  49. High-efficiency thin-film InGaP/(In)GaAs/Ge multijunction solar cells enabled by controlled spalling technology

    Article • June 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  50. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology

    Article • Applied Physics Letters, January 2012, American Institute of Physics

    Can Bayram

  51. Reliable GaN-based resonant tunneling diodes with reproducible room-temperature negative differential resistance

    Article • January 2012, SPIE

    Can Bayram

  52. Enabling GaN-based Infrared Technology

    Article • Journal of Applied Physics, January 2012, American Institute of Physics

    Can Bayram

  53. Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes

    Article • January 2011, SPIE

    Can Bayram

  54. III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices

    Article • November 2010, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  55. Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes

    Article • Applied Physics Letters, November 2010, American Institute of Physics

    Can Bayram

  56. Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices

    Article • Applied Physics Letters, September 2010, American Institute of Physics

    Can Bayram

  57. Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes

    Article • Applied Physics Letters, August 2010, American Institute of Physics

    Can Bayram

  58. Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates

    Article • August 2010, SPIE

    Can Bayram

  59. III-nitride-based avalanche photo detectors

    Article • August 2010, SPIE

    Can Bayram

  60. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

    Article • Applied Physics Letters, June 2010, American Institute of Physics

    Can Bayram

  61. GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

    Article • Applied Physics Letters, May 2010, American Institute of Physics

    Can Bayram

  62. Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature

    Article • Journal of Applied Physics, April 2010, American Institute of Physics

    Can Bayram

  63. AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition

    Article • Applied Physics Letters, January 2010, American Institute of Physics

    Can Bayram

  64. Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition

    Article • Applied Physics Letters, November 2009, American Institute of Physics

    Can Bayram

  65. Hybrid green LEDs with n-type ZnO substituted for n-type GaN in an inverted p-n junction

    Article • October 2009, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  66. Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition

    Article • Applied Physics Letters, September 2009, American Institute of Physics

    Can Bayram

  67. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications

    Article • May 2009, SPIE

    Can Bayram

  68. Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

    Article • Applied Physics Letters, March 2009, American Institute of Physics

    Can Bayram

  69. Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra

    Article • Applied Physics A, March 2009, Springer Science + Business Media

    Can Bayram

  70. Hybrid green LEDs based on n -ZnO/(InGaN/GaN) multi-quantum-wells/ p -GaN

    Article • February 2009, SPIE

    Can Bayram

  71. GaN-based nanostructured photodetectors

    Article • January 2009, SPIE

    Can Bayram

  72. III-nitride avalanche photodiodes

    Article • January 2009, SPIE

    Can Bayram

  73. Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions

    Article • January 2009, SPIE

    Can Bayram

  74. Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2009, American Vacuum Society

    Can Bayram

  75. Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, January 2009, American Vacuum Society

    Can Bayram

  76. GaN nanostructured p-i-n photodiodes

    Article • Applied Physics Letters, December 2008, American Institute of Physics

    Can Bayram

  77. Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN

    Article • Applied Physics B Photophysics and Laser Chemistry, November 2008, Springer Science + Business Media

    Can Bayram

  78. High quantum efficiency back-illuminated GaN avalanche photodiodes

    Article • Applied Physics Letters, November 2008, American Institute of Physics

    Can Bayram

  79. Delta-doping optimization for high quality p-type GaN

    Article • Journal of Applied Physics, October 2008, American Institute of Physics

    Can Bayram

  80. A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

    Article • Applied Physics Letters, August 2008, American Institute of Physics

    Can Bayram

  81. Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

    Article • Applied Physics Letters, June 2008, American Institute of Physics

    Can Bayram

  82. High Optical Response in Forward Biased (In,Ga)N–GaN Multiquantum-Well Diodes Under Barrier Illumination

    Article • IEEE Journal of Quantum Electronics, April 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Can Bayram

  83. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes

    Article • Applied Physics Letters, March 2008, American Institute of Physics

    Can Bayram

  84. III-nitride photon counting avalanche photodiodes

    Article • February 2008, SPIE

    Can Bayram

  85. Scaling in back-illuminated GaN avalanche photodiodes

    Article • Applied Physics Letters, August 2007, American Institute of Physics

    Can Bayram

  86. Geiger-mode operation of back-illuminated GaN avalanche photodiodes

    Article • Applied Physics Letters, July 2007, American Institute of Physics

    Can Bayram

  87. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes

    Article • Applied Physics Letters, April 2007, American Institute of Physics

    Can Bayram

  88. Etching of ZnO towards the development of ZnO homostructure LEDs

    Article • February 2007, SPIE

    Can Bayram

  89. III-nitride avalanche photodiodes

    Article • February 2007, SPIE

    Can Bayram

  90. Solar-blind avalanche photodiodes

    Article • February 2006, SPIE

    Can Bayram

  91. AlGaN-based Intersubband Device Technology

    Article • SPIE

    Can Bayram