All Stories

  1. Growth and Characterisation of Antiferromagnetic Ni2MnAl Heusler Alloy Films
  2. Revealing the importance of interfaces for pure spin current transport
  3. Thermally assisted magnetisation reversal
  4. Global snapshot of the effects of the COVID-19 pandemic on the research activities of materials scientists between Spring and Autumn 2020
  5. Heusler alloys for spintronic devices: review on recent development and future perspectives
  6. Magnetic braille using ferrofluids
  7. Non-Destructive Imaging on Synthesised Nanoparticles
  8. Review on spintronics: Principles and device applications
  9. The 2020 magnetism roadmap
  10. Magnetic tunnel junctions with metastable bcc Co3Mn electrodes
  11. Opportunities and challenges for spintronics in the microelectronics industry
  12. Anisotropy in antiferromagnets
  13. Experimental inspection of a computationally-designed NiCrMnSi Heusler alloy with high Curie temperature
  14. A review of methods and data to determine raw material criticality
  15. Non-destructive imaging for quality assurance of magnetoresistive random-access memory junctions
  16. Switching of Skyrmion chirality by local heating
  17. Controllability of cupric particle synthesis by linear alcohol chain number as additive and pH control in cupric acetate solution using X-ray radiolysis
  18. Magnetic tunnel junctions with a B2 -ordered CoFeCrAl equiatomic Heusler alloy
  19. In-plane and perpendicular exchange bias effect induced by an antiferromagnetic D019 Mn2FeGa thin film
  20. Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy
  21. Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode
  22. Thermal stability of exchange bias systems based on MnN
  23. Structural and antiferromagnetic characterization of noncollinear D019 Mn3Ge polycrystalline film
  24. Magnetic Force Microscopy for Magnetic Recording and Devices
  25. Growth and characterisation of ferromagnetic and antiferromagnetic Fe2+x V y Al Heusler alloy films
  26. Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam
  27. Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness
  28. Heusler alloys with bcc tungsten seed layers for GMR junctions
  29. Magneto-optical detection of spin accumulation under the influence of mechanical rotation
  30. Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions
  31. Spintronics based random access memory: a review
  32. Development of antiferromagnetic Heusler alloys for the replacement of iridium as a critically raw material
  33. Magnetic and structural properties of antiferromagnetic Mn2VSi alloy films grown at elevated temperatures
  34. Fabrication of Epitaxial Fe3O4 Film on a Si(111) Substrate
  35. Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices
  36. Growth and characterisation of antiferromagnetic polycrystalline Mn3Ga films
  37. Exchange bias induced at a Co2FeAl0.5Si0.5/Cr interface
  38. The antiphase boundary in half-metallic Heusler alloy Co2Fe(Al,Si): atomic structure, spin polarization reversal, and domain wall effects
  39. Highly Efficient Spin-Current Operation in a Cu Nano-Ring
  40. Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)
  41. Non-destructive imaging of buried electronic interfaces using a decelerated scanning electron beam
  42. Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si–Co–Si
  43. Perpendicular Anisotropy in Heusler Alloy Layers Induced by a V Seed Layer
  44. Exchange bias effects in Heusler alloy Ni2MnAl/Fe bilayers
  45. The role of chemical structure on the magnetic and electronic properties of Co2FeAl0.5Si0.5/Si(111) interface
  46. The effect of atomic structure on interface spin-polarization of half-metallic spin valves: Co2MnSi/Ag epitaxial interfaces
  47. Exchange Bias of Polycrystalline Heusler Alloy Thin Films
  48. Heusler Alloy Films for Spintronic Devices
  49. Roadmap for Emerging Materials for Spintronic Device Applications
  50. Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films
  51. Optimisation of geometrical ratchets for spin-current amplification
  52. Domain wall pinning for racetrack memory using exchange bias
  53. Dependence of Curie temperature on Pt layer thickness in Co/Pt system
  54. FOREWORD
  55. POLYCRYSTALLINE CO-BASED FULL-HEUSLER-ALLOY FILMS FOR SPINTRONIC DEVICES
  56. Spin-current signal amplification by a geometrical ratchet
  57. New Bandgap Measurement Technique for a Half-Metallic Ferromagnet
  58. Domain wall pinning for racetrack memory using exchange bias
  59. Over 50% reduction in the formation energy of Co-based Heusler alloy films by two-dimensional crystallisation
  60. Correlations between atomic structure and giant magnetoresistance ratio in Co2(Fe,Mn)Si spin valves
  61. Growth of polycrystalline Heusler alloys for spintronic devices
  62. Investigation of the temperature-dependence of ferromagnetic resonance and spin waves in Co2FeAl0.5Si0.5
  63. Optimization of exchange bias in Co2FeAl0.5Si0.5 Heusler alloy layers
  64. Future perspectives for spintronic devices
  65. Effect of grain cutting in exchange biased nanostructures
  66. The Effect of Cobalt-Sublattice Disorder on Spin Polarisation in Co2FexMn1−xSi Heusler Alloys
  67. Correlation of Microstructure and Transport Properties of Multilayered Graphene Spin Valves on SiO2/Si
  68. Heusler-alloy films for spintronic devices
  69. Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs
  70. Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films
  71. Room-temperature structural ordering of a Heusler compound Fe3Si
  72. Effect of Interface Structure on Exchange Biased Heusler Alloy Films
  73. Effect of Seed Layers on Polycrystalline ${\rm Co}_{2}{\rm FeSi}$ Thin Films
  74. Magnetic Properties of Epitaxial Co-Evaporated Fe:MgO Anti-Granular Films
  75. The effect of interfaces on magnetic activation volumes in single crystal Co2FeSi Heusler alloy thin films
  76. Observation of Magnetic-Switching and Multiferroic-Like Behavior of Co Nanoparticles in a C60Matrix
  77. Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes
  78. Layer-by-layer crystallization of Co2FeSi Heusler alloy thin films
  79. Temperature estimation in a ferromagnetic Fe–Ni nanowire involving a current-driven domain wall motion
  80. Activation Volumes in Co$_{2}$FeSi Thin Films
  81. Atomic Interfacial Structures in Fe/GaAs Films
  82. Enhancement of Exchange Bias in the ${\rm Co}_{2}{\rm FeSi/IrMn}$ System
  83. Spin-transfer-torque-induced phenomena
  84. Effect of grain size on exchange-biased Heusler alloys
  85. The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves
  86. Optimization of exchange-biased Heusler alloys
  87. Interfacial structure and transport properties of Fe/GaAs(001)
  88. Schottky Barrier Height in Fe/GaAs Films
  89. Interfacial structure and magnetic properties of Co2FeAl0.5Si0.5/MgO heterostructures
  90. Si segregation in polycrystalline Co2MnSi films with grain-size control
  91. Current manipulation of a vortex confined in a micron-sized Fe19Ni81 disk
  92. Anomalous Hall voltage rectification and quantized spin-wave excitation induced by simultaneous application of dc and rf currents in a single-layeredNi81Fe19nanoscale wire
  93. Observation of a bias-dependent constrained magnetic wall in a Ni point contact
  94. Spin polarization control through resonant states in an Fe/GaAs Schottky barrier
  95. Broadband ferromagnetic resonance ofNi81Fe19wires using a rectifying effect
  96. DC electrical response and impedance change induced by a microwave signal in a patterned ferromagnetic wire
  97. A silicon metal-oxide-semiconductor field-effect transistor Hall bar for scanning Hall probe microscopy
  98. Effect of ferromagnetism on AB oscillations in a normal-metal ring
  99. Domain formation induced by perpendicular spin injection
  100. Current-induced vortex-vortex switching in a nanopillar comprising two Co nano-rings
  101. Magnetic characterization and switching of Co nanorings in current-perpendicular-to-plane configuration
  102. Temperature dependence of intrinsic switching current of a Co nanomagnet
  103. Estimation of local and nonlocal contributions to the current-induced magnetization switching
  104. Spin-transfer-induced magnetic domain formation
  105. Structural and electrical properties of InSe polycrystalline films and diode fabrication
  106. Heusler alloy/semiconductor hybrid structures
  107. Influence of capping layer on the current-induced magnetization switching in magnetic nanopillars
  108. Magnetic transport mechanism in double ferromagnetic tunnel junctions with two-dimensional ferromagnetic particles
  109. Magnetic properties of epitaxial Co/sub 2/Cr/sub 1-x/Fe/sub x/Al full Heusler alloy thin films with the L2/sub 1/ structure
  110. Distinctive current-induced magnetization switching in a current-perpendicular-to-plane giant-magnetoresistance nanopillar with a synthetic antiferromagnet free layer
  111. Magnetic properties of L21-structured Co2(Cr,Fe)Al films grown on GaAs(001) substrates
  112. Structural and magnetic properties of epitaxial L21-structured Co2(Cr,Fe)Al films grown on GaAs(001) substrates
  113. Erratum: Corrigendum: Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve
  114. Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions
  115. Significant Magnetoresistance Enhancement due to a Cotunneling Process in a Double Tunnel Junction with Single Discontinuous Ferromagnetic Layer Insertion
  116. Tunnel magnetoresistance enhancement in ferromagnetic tunnel junctions with ferromagnetic nano-particle layer insertion
  117. Tunnel magnetoresistance in fully epitaxial MgO double barrier magnetic tunnel junctions
  118. Spin-dependent quantum oscillations in magnetic tunnel junctions with Ru quantum wells
  119. Magnetoresistance in tunnel junctions using Co2(Cr,Fe)Al full Heusler alloys
  120. Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve
  121. Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin Valve
  122. Highly efficient spin filtering of ballistic electrons
  123. Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer
  124. Electron spin filtering in ferromagnet/semiconductor heterostructures
  125. Ballistic spin filtering across ferromagnet/semiconductor interfaces at room temperature
  126. Geometric coercivity scaling in magnetic thin film antidot arrays
  127. Influence of crystalline structures on the domain configurations in controlled mesoscopic ferromagnetic wire junctions
  128. Test of ballistic spin-polarized electron transport across ferromagnet/semiconductor Schottky interfaces
  129. Effects of interdot dipole coupling in mesoscopic epitaxial Fe[100] dot arrays
  130. Correction to "Spin-polarized electron transport processes at the ferromagnet/semiconductor interface"
  131. Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures (invited)
  132. Domain-wall trapping in controlled mesoscopic ferromagnetic wire junctions
  133. Spin-polarized electron transport in a NiFe/GaAs Schottky diode
  134. Spin-polarized electron transport in ferromagnet/semiconductor hybrid structures induced by photon excitation
  135. Magnetoresistance of a domain wall at a submicron junction
  136. Domain wall trapping in controlled submicron ferromagnetic elements
  137. Micromagnetism in mesoscopic epitaxial Fe dot arrays
  138. Spin-dependent electron transport in NiFe/GaAs Schottky barrier structures
  139. Domain nucleation processes in mesoscopic Ni80Fe20 wire junctions
  140. Magnetic nanoscale dots on colloid crystal surfaces
  141. Magnetic domain studies of permalloy wire-based structures with junctions
  142. Magnetization reversal in mesoscopic Ni/sub 80/Fe/sub 20/ wires: a magnetic domain launching device
  143. Spin-polarized electron transport processes at the ferromagnet/semiconductor interface
  144. Domain wall trapping probed by magnetoresistance and magnetic force microscopy in submicron ferromagnetic wire structures
  145. Easy-axis transition in epitaxial face-centered-cubic Ni80Fe20/Ni/Cu(100)
  146. Spin-dependent electron transport at the ferromagnet/semiconductor interface
  147. Effect of junction geometry on switching field and reversal behavior in permalloy wires
  148. Influence of lateral geometry on magnetoresistance and magnetisation reversal in Ni/sub 80/Fe/sub 20/ wires
  149. Magnetic domain evolution in permalloy mesoscopic dots
  150. Magnetic domain evolution in permalloy mesoscopic dots
  151. Magnetization reversal and magnetic anisotropy in Co network nanostructures
  152. Pseudo-Hall effect and anisotropic magnetoresistance in a micron-scale Ni/sub 80/Fe/sub 20/ device
  153. Spin dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation
  154. Spin-dependent electron transport through the ferromagnet/semiconductor interface induced by photon excitation
  155. Magnetic properties of martensite in Fe-Ni alloy measured by means of scanning probe microscopy
  156. Micromagnetic configurations of martensite in Fe-Ni alloys
  157. Influence of crystalline structure on micromagnetic domain formation