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  1. Multilevel non-volatile memory based on Al2O3/ZnO bilayer device

    Article • Micro & Nano Letters, October 2020, the Institution of Engineering and Technology (the IET)

    arya jagath

  2. Analytical modelling of tantalum/titanium oxide-based multi-layer selector to eliminate sneak path current in RRAM arrays

    Article • IET Circuits Devices & Systems, October 2020, the Institution of Engineering and Technology (the IET)

    arya jagath

  3. An Insight Into Physics Based RRAM Models – A Review

    Article • The Journal of Engineering, April 2019, the Institution of Engineering and Technology (the IET)

    arya jagath, Nandhakumar Thulasiraman