All Stories

  1. Comparative Study on Planar Type-II Strained-Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation

    Article • Applied Sciences, June 2022, MDPI AG

    Dr Arash Dehzangi

  2. Planar Strained Layer Superlattice Infrared Photodetectors Fabricated by Ion-Implantation

    Article • May 2022, MDPI AG

    Dr Arash Dehzangi

  3. Students’ negative emotions and their rational and irrational behaviors during COVID-19 outbreak

    Article • PLoS ONE, March 2022, PLOS

    Dr Arash Dehzangi

  4. Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice

    Article • Photonics, April 2021, MDPI AG

    Dr Arash Dehzangi

  5. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice

    Article • Scientific Reports, March 2021, Springer Science + Business Media

    Dr Arash Dehzangi

  6. Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices

    Article • Infrared Physics & Technology, March 2021, Elsevier

    Dr Arash Dehzangi

  7. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice

    Article • Light Science & Applications, January 2021, Springer Science + Business Media

    Dr Arash Dehzangi

  8. Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector

    Article • Results in Optics, January 2021, Elsevier

    Dr Arash Dehzangi

  9. Avalanche Photodetector Based on InAs/InSb Superlattice

    Article • Quantum Reports, December 2020, MDPI AG

    Dr Arash Dehzangi

  10. Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices

    Article • Infrared Physics & Technology, October 2020, Elsevier

    Dr Arash Dehzangi

  11. Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

    Article • Photonics, September 2020, MDPI AG

    Dr Arash Dehzangi

  12. High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier

    Article • Infrared Physics & Technology, September 2020, Elsevier

    Dr Arash Dehzangi

  13. Type-II superlattice-based heterojunction phototransistors for high speed applications

    Article • Infrared Physics & Technology, August 2020, Elsevier

    Dr Arash Dehzangi

  14. Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation

    Article • Applied Physics Letters, June 2020, American Institute of Physics

    Dr Arash Dehzangi

  15. Double-stadium Si-MZI racetrack microring resonator circuits: way to generate optical digital patterns

    Article • Journal of the Optical Society of America B, April 2020, Optical Society of America (OSA)

    Dr Arash Dehzangi

  16. High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD

    Article • Applied Physics Letters, April 2020, American Institute of Physics

    Dr Arash Dehzangi

  17. Transport Modelling of Multi-Phase Fluid Flow in Porous Media for Enhanced Oil Recovery

    Article • Defect and Diffusion Forum, March 2020, Trans Tech Publications

    Dr Arash Dehzangi

  18. Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice

    Article • AIP Advances, February 2020, American Institute of Physics

    Dr Arash Dehzangi

  19. High-speed short wavelength infrared heterojunction phototransistors based on type II superlattices

    Article • January 2020, SPIE

    Dr Arash Dehzangi

  20. High speed antimony-based superlattice photodetectors transferred on sapphire

    Article • Applied Physics Express, October 2019, Japan Society of Applied Physics

    Dr Arash Dehzangi

  21. MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire

    Article • Applied Physics Express, August 2019, Japan Society of Applied Physics

    Dr Arash Dehzangi

  22. Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition

    Article • Applied Physics Letters, August 2019, American Institute of Physics

    Dr Arash Dehzangi, donghai wu

  23. Silicon racetrack resonator based on nonlinear material

    Article • The European Physical Journal D, August 2019, Springer Science + Business Media

    Dr Arash Dehzangi

  24. Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors

    Article • Semiconductor Science and Technology, May 2019, Institute of Physics Publishing

    Dr Arash Dehzangi

  25. Extended short wavelength infrared heterojunction phototransistors based on type II superlattices

    Article • Applied Physics Letters, May 2019, American Institute of Physics

    Dr Arash Dehzangi, donghai wu

  26. Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors

    Article • Electronics, May 2019, MDPI AG

    Dr Arash Dehzangi

  27. Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers

    Article • May 2019, SPIE

    Dr Arash Dehzangi

  28. Half panda waveguide structure in the generation of four-wave mixing

    Article • Optik, April 2019, Elsevier

    Dr Arash Dehzangi

  29. Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor

    Article • Scientific Reports, March 2019, Springer Science + Business Media

    Dr Arash Dehzangi

  30. Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetectors

    Article • Semiconductor Science and Technology, February 2019, Institute of Physics Publishing

    Dr Arash Dehzangi

  31. Suppressing Spectral Crosstalk in Dual-Band Long- Wavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reflectors

    Article • IEEE Journal of Quantum Electronics, February 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  32. High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition

    Article • Applied Physics Letters, January 2019, American Institute of Physics

    Dr Arash Dehzangi, Yiyun Zhang, donghai wu

  33. High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices

    Article • IEEE Journal of Quantum Electronics, December 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  34. On comparison of the temperature sensitivity of SU-8-based triple-arm MZI against straight rib optical waveguides patterned on silicon wafer

    Article • Indian Journal of Physics, September 2018, Springer Science + Business Media

    Dr Arash Dehzangi

  35. Demonstration of long wavelength infrared type-II InAs/InAs1-xSbx superlattices photodiodes on GaSb substrate grown by metalorganic chemical vapor deposition

    Article • Applied Physics Letters, June 2018, American Institute of Physics

    Dr Arash Dehzangi

  36. Thin-Film Antimonide-Based Photodetectors Integrated on Si

    Article • IEEE Journal of Quantum Electronics, April 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  37. nBn extended short-wavelength infrared focal plane array

    Article • Optics Letters, January 2018, Optical Society of America (OSA)

    Dr Arash Dehzangi

  38. Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future

    Article • January 2018, SPIE

    Dr Arash Dehzangi

  39. Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection

    Article • Optics Letters, October 2017, Optical Society of America (OSA)

    Dr Arash Dehzangi

  40. Effect of Channel Width Variation on Electrical Characteristics of Double Lateral Gate Junctionless Transistors; A Numerical Study

    Article • Silicon, October 2017, Springer Science + Business Media

    Dr Arash Dehzangi

  41. Optically-Pumped Single-Mode Deep-Ultraviolet Microdisk Lasers With AlGaN-Based Multiple Quantum Wells on Si Substrate

    Article • IEEE Photonics Journal, October 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  42. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices

    Article • Scientific Reports, June 2017, Nature

    Dr Arash Dehzangi

  43. Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier

    Article • Applied Physics Letters, March 2017, American Institute of Physics

    Dr Arash Dehzangi

  44. Background–limited long wavelength infrared InAs/InAs1− xSbxtype-II superlattice-based photodetectors operating at 110 K

    Article • APL Materials, March 2017, American Institute of Physics

    Dr Arash Dehzangi

  45. Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors

    Article • February 2017, SPIE

    Dr Arash Dehzangi

  46. Impact of scaling base thickness on the performance of heterojunction phototransistors

    Article • Nanotechnology, February 2017, Institute of Physics Publishing

    Dr Arash Dehzangi

  47. Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length

    Article • Journal of Electronic Materials, October 2016, Springer Science + Business Media

    Dr Arash Dehzangi

  48. Structure and Physical Properties of NiO/Co3O4 Nanoparticles

    Article • Metals, August 2016, MDPI AG

    Dr Arash Dehzangi

  49. Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices

    Article • Applied Physics Letters, July 2016, American Institute of Physics

    Dr Arash Dehzangi

  50. Formation and characterization of ultrafine nanophosphors of lithium tetraborate (Li2B4O7) for personnel and medical dosimetry

    Article • Journal of Materials Research and Technology, July 2016, Elsevier

    Dr Arash Dehzangi

  51. InAs/InAs1-xSbxtype-II superlattices for high performance long wavelength infrared detection

    Article • May 2016, SPIE

    Dr Arash Dehzangi

  52. High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices

    Article • May 2016, SPIE

    Dr Arash Dehzangi

  53. Study of the side gate junctionless transistor in accumulation region

    Article • Microelectronics International, May 2016, Emerald

    Dr P Susthitha Menon, Prof Azman Jalar, Dr Arash Dehzangi

  54. High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

    Article • Scientific Reports, April 2016, Nature

    Dr Arash Dehzangi

  55. Single step thermal treatment synthesis and characterization of lithium tetraborate nanophosphor

    Article • Journal of Materials Research and Technology, January 2016, Elsevier

    Dr Arash Dehzangi

  56. Fabrication of a novel chromium-iron oxide (Cr2Fe6O12) nanoparticles by thermal treatment method

    Article • Journal of Magnetism and Magnetic Materials, September 2015, Elsevier

    Dr Arash Dehzangi

  57. Nanoengineered thin films of copper for the optical monitoring of urine – a comparative study of the helical and columnar nanostructures

    Article • Journal of Electromagnetic Waves and Applications, August 2015, Taylor & Francis

    Dr Arash Dehzangi

  58. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Article • Applied Surface Science, April 2015, Elsevier

    Dr Arash Dehzangi

  59. Atomic force microscope base nanolithography for reproducible micro and nanofabrication

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  60. Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  61. Silver Nanoparticle Fabrication by Laser Ablation in Polyvinyl Alcohol Solutions

    Article • Chinese Physics Letters, July 2014, Institute of Physics Publishing

    Dr Arash Dehzangi

  62. Growth and characterization of La0.7Na0.3MnO3 thin films prepared by pulsed laser deposition on different substrates

    Article • Journal of Alloys and Compounds, May 2014, Elsevier

    Dr Arash Dehzangi

  63. Effect of Geometric Parameters on the Performance of P-Type Junctionless Lateral Gate Transistors

    Article • PLoS ONE, April 2014, PLOS

    Dr Arash Dehzangi

  64. Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

    Article • Micro & Nano Letters, March 2014, the Institution of Engineering and Technology (the IET)

    Dr Arash Dehzangi

  65. A comprehensive overview on the structure and comparison of magnetic properties of nanocrystalline synthesized by a thermal treatment method

    Article • Journal of Physics and Chemistry of Solids, March 2014, Elsevier

    Dr Arash Dehzangi

  66. Electrical properties and conduction mechanisms in La2/3Ca1/3MnO3 thin films prepared by pulsed laser deposition on different substrates

    Article • Applied Physics A, February 2014, Springer Science + Business Media

    Dr Arash Dehzangi

  67. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

    Article • PLoS ONE, December 2013, PLOS

    Dr Arash Dehzangi

  68. Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices

    Article • Micro & Nano Letters, November 2013, the Institution of Engineering and Technology (the IET)

    Dr Arash Dehzangi

  69. Numerical study of side gate junction-less transistor in on state

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  70. Numerical investigation of channel width variation in junctionless transistors performance

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi, Dr P Susthitha Menon

  71. Annealing effects on structural and electrical properties of micro heater conductor element

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  72. A simulation study of thickness effect in performance of double lateral gate junctionless transistors

    Article • September 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  73. Effect of SiO2 particles on dispersion of montmorillonite (MMT) in polyimide nanocomposite during thermal imidization

    Article • Research on Chemical Intermediates, July 2013, Springer Science + Business Media

    Dr Arash Dehzangi

  74. Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope

    Article • physica status solidi (a), June 2013, Wiley

    Dr Arash Dehzangi

  75. Impact of Parameter Variation in Fabrication of Nanostructure by Atomic Force Microscopy Nanolithography

    Article • PLoS ONE, June 2013, PLOS

    Dr Arash Dehzangi

  76. Optical Properties of CdS/PVA Nanocomposite Films Synthesized using the Gamma-Irradiation-Induced Method

    Article • Chinese Physics Letters, May 2013, Institute of Physics Publishing

    Dr Arash Dehzangi

  77. Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

    Article • Beilstein Journal of Nanotechnology, December 2012, Beilstein Institut

    Dr Arash Dehzangi

  78. Numerical investigation and comparison with experimental characterisation of side gate p-type junctionless silicon transistor in pinch-off state

    Article • Micro & Nano Letters, September 2012, the Institution of Engineering and Technology (the IET)

    Dr Arash Dehzangi, Dr SAEID KAKOOEI

  79. Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography

    Article • Nanoscale Research Letters, July 2012, Springer Science + Business Media

    Dr Arash Dehzangi

  80. Preparation, Characterization and Thermal Degradation of Polyimide (4-APS/BTDA)/SiO2 Composite Films

    Article • International Journal of Molecular Sciences, April 2012, MDPI AG

    Professor S.M. Sapuan, Professor MOHD ZOBIR HUSSEIN, Dr Arash Dehzangi

  81. Study the Characteristic of P-Type Junction-Less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography

    Article • American Journal of Applied Sciences, September 2011, Science Publications

    Dr Arash Dehzangi

  82. Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography

    Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Dr Arash Dehzangi

  83. Fold Prediction Problem: The Application of New Physical and Physicochemical- Based Features

    Article • Protein and Peptide Letters, February 2011, Bentham Science Publishers

    Dr Arash Dehzangi