All Stories

  1. Carrier Transport Mechanisms in Ion Implanted and Highly-Doped p-Type 4H-SiC(Al)

    Article • Materials Science Forum, July 2019, Trans Tech Publications

    Prof. Antonella A. Parisini, dr Roberta Nipoti

  2. Si and Sn doping of ε-Ga2O3 layers

    Article • APL Materials, March 2019, American Institute of Physics

    Prof. Antonella A. Parisini

  3. The electronic structure of ε-Ga2O3

    Article • APL Materials, February 2019, American Institute of Physics

    Prof. Antonella A. Parisini

  4. 1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini, Giovanni Alfieri

  5. High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

    Article • Materials Science Forum, May 2016, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  6. Analysis of the scattering mechanisms controlling electron mobility in β -Ga 2 O 3 crystals

    Article • Semiconductor Science and Technology, February 2016, Institute of Physics Publishing

    Prof. Antonella A. Parisini

  7. Al+ Ion Implanted On-Axis <0001> Semi-Insulating 4H-SiC

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  8. About the Hole Transport Analysis in Heavy Doped p-Type 4H-SiC(Al)

    Article • Materials Science Forum, June 2015, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  9. Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication

    Article • Materials Science Forum, February 2014, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  10. Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication

    Article • Journal of Electronic Materials, January 2014, Springer Science + Business Media

    Prof. Antonella A. Parisini

  11. Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation

    Article • Journal of Applied Physics, December 2013, American Institute of Physics

    Prof. Antonella A. Parisini

  12. Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

    Article • Journal of Applied Physics, October 2013, American Institute of Physics

    Prof. Antonella A. Parisini

  13. Al+ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

    Article • Materials Science Forum, January 2013, Trans Tech Publications

    dr Roberta Nipoti, Prof. Antonella A. Parisini

  14. Electrical characterization of GaSb buried p-n junctions

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Prof. Antonella A. Parisini

  15. On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy

    Article • Thin Solid Films, August 2012, Elsevier

    Prof. Antonella A. Parisini

  16. Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC

    Article • Journal of Materials Research, July 2012, Cambridge University Press

    Prof. Antonella A. Parisini

  17. Vertical transport through GaAs/InGaP multi-quantum-wells p-i-n diode with evidence of tunneling effects

    Article • Journal of Applied Physics, November 2011, American Institute of Physics

    Prof. Antonella A. Parisini

  18. Anomalies in the Temperature Dependence of the Photoelectrical Response of GaAs/InGaP Superlattices

    Article • Japanese Journal of Applied Physics, December 2010, Japan Society of Applied Physics

    Prof. Antonella A. Parisini

  19. Modulation frequency dependence of the photoelectrical response of GaAs/InGaP superlattices

    Article • Journal of Applied Physics, December 2009, American Institute of Physics

    Prof. Antonella A. Parisini

  20. Investigation of GaAs/InGaP superlattices for quantum well solar cells

    Article • Thin Solid Films, August 2008, Elsevier

    Prof. Antonella A. Parisini

  21. Determination of the valence band offset of MOVPE-grown In 0.48 Ga 0.52 P ∕ Ga As multiple quantum wells by admittance spectroscopy

    Article • Physical Review B, March 2008, American Physical Society (APS)

    Prof. Antonella A. Parisini

  22. Admittance spectroscopy of GaAs/InGaP MQW structures

    Article • Materials Science and Engineering B, February 2008, Elsevier

    Prof. Antonella A. Parisini

  23. Negative magnetoresistance effects in metallic n-type GaSb

    Article • Journal of Applied Physics, September 2007, American Institute of Physics

    Prof. Antonella A. Parisini

  24. Metal–insulator transition induced by the magnetic field in n-type GaSb

    Article • Solid State Communications, October 2005, Elsevier

    Prof. Antonella A. Parisini

  25. Magneto-oscillations of the Hall coefficient in n-type GaSb at the extreme quantum limit

    Article • Solid State Communications, June 2004, Elsevier

    Prof. Antonella A. Parisini

  26. Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers

    Article • Materials Science and Engineering B, September 2001, Elsevier

    Prof. Antonella A. Parisini

  27. Optical properties of G a S b / A l 0.4 Ga 0.6 Sb multiple quantum wells

    Article • July 2000, American Physical Society (APS)

    Prof. Antonella A. Parisini

  28. Optical absorption near the fundamental absorption edge in GaSb

    Article • July 1995, American Physical Society (APS)

    Prof. Antonella A. Parisini

  29. Hall and photo-Hall effect measurements on sulphur-doped GaSb

    Article • Semiconductor Science and Technology, April 1995, Institute of Physics Publishing

    Prof. Antonella A. Parisini

  30. Influence of the DX Center on the Transport Properties of Si-Doped AlxGa1-xAs

    Article • Defect and Diffusion Forum, January 1995, Trans Tech Publications

    Prof. Antonella A. Parisini

  31. Electron scattering by spatially correlated DX charges

    Article • July 1994, American Physical Society (APS)

    Prof. Antonella A. Parisini

  32. A study of the electrical properties controlled by residual acceptors in gallium antimonide

    Article • Semiconductor Science and Technology, November 1993, Institute of Physics Publishing

    Prof. Antonella A. Parisini

  33. Investigation of the charge state of the DX centre through analysis of electron mobility data in Al x Ga 1-x As

    Article • Semiconductor Science and Technology, March 1993, Institute of Physics Publishing

    Prof. Antonella A. Parisini

  34. Spatial correlations of DX charges and electron mobility in Al x Ga 1-x As

    Article • Semiconductor Science and Technology, January 1993, Institute of Physics Publishing

    Prof. Antonella A. Parisini

  35. Photovoltage and photocurrent spectroscopy ofp+‐i‐n+GaAs/AlGaAs quantum well heterostructures

    Article • Journal of Applied Physics, October 1992, American Institute of Physics

    Prof. Antonella A. Parisini

  36. Low-temperature mobility of photoexcited electrons in Al x Ga 1 − x As containing DX centers

    Article • October 1991, American Physical Society (APS)

    Prof. Antonella A. Parisini

  37. Hall measurements under weak persistent photoexcitation in Si-doped Al x Ga 1-x As

    Article • Semiconductor Science and Technology, October 1991, Institute of Physics Publishing

    Prof. Antonella A. Parisini

  38. Exciton transitions and photovoltaic spectra in GaAs/AlGaAs multiple quantum wells

    Article • Materials Science and Engineering B, July 1991, Elsevier

    Prof. Antonella A. Parisini

  39. Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1−xAs

    Article • Applied Surface Science, June 1991, Elsevier

    Prof. Antonella A. Parisini

  40. Computer-assisted Hall effect measurements as a function of temperature

    Article • European Journal of Physics, October 1989, Institute of Physics Publishing

    Prof. Antonella A. Parisini

  41. CdIn2S2Se2: A new semiconducting compound

    Article • Journal of Solid State Chemistry, November 1986, Elsevier

    Prof. Antonella A. Parisini

  42. Resonance effects in the Raman spectrum of CdGa2Se4

    Article • physica status solidi (b), March 1986, Wiley

    Prof. Antonella A. Parisini

  43. A MREI Model for Zincblence-Like Phonons in CdGa2(SxSe1−x)4 Mixed Crystals

    Article • physica status solidi (b), June 1985, Wiley

    Prof. Antonella A. Parisini

  44. Effective ionic charges in CdGa2Se4 and CdGa2S4

    Article • Solid State Communications, September 1984, Elsevier

    Prof. Antonella A. Parisini

  45. Comments on the Optic Vibrational Modes in Defect Chalcopyrites

    Article • physica status solidi (b), September 1984, Wiley

    Prof. Antonella A. Parisini

  46. EXAFS study of mixed crystals of the AIIBIII2XVI4 family

    Article • Progress in Crystal Growth and Characterization, August 1984, Elsevier

    Prof. Antonella A. Parisini

  47. Raman investigation of lattice dynamics of pseudoternary mixed crystals

    Article • Progress in Crystal Growth and Characterization, August 1984, Elsevier

    Prof. Antonella A. Parisini