All Stories

  1. Magnetic field induced exciton spin dynamics in indirect band gap (In,Al)As/AlAs quantum dots

    Article • Journal of Luminescence, December 2025, Elsevier

    Dr Anton Gutakovskii

  2. Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis

    Article • Materials Letters, October 2024, Elsevier

    Dr Anton Gutakovskii

  3. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

    Article • Thin Solid Films, February 2024, Elsevier

    Dr Anton Gutakovskii

  4. Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO2

    Article • Crystals, February 2023, MDPI AG

    Dr Anton Gutakovskii

  5. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

    Article • Nanomaterials, December 2022, MDPI AG

    Dr Anton Gutakovskii

  6. The Nature of Ferromagnetism in a System of Self-Ordered α-FeSi2 Nanorods on a Si(111)-4° Vicinal Surface: Experiment and Theory

    Article • Nanomaterials, October 2022, MDPI AG

    Dr Anton Gutakovskii

  7. Spin dynamics of charged excitons in ultrathin (In,Al)(Sb,As)/AlAs and Al(Sb,As)/AlAs quantum wells with an indirect band gap

    Article • Physical Review B, August 2022, American Physical Society (APS)

    Dr Anton Gutakovskii

  8. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

    Article • Journal of Applied Physics, February 2022, American Institute of Physics

    Dr Anton Gutakovskii

  9. Si-based light emitters synthesized with Ge+ ion bombardment

    Article • Journal of Applied Physics, October 2021, American Institute of Physics

    Dr Anton Gutakovskii

  10. Blister suppression in the CO+ molecule implanted SOI substrates with ultrathin buried oxides

    Article • Materials Today Communications, September 2021, Elsevier

    Dr Anton Gutakovskii

  11. Transformation of the InP(001) surface upon annealing in an arsenic flux

    Article • Surface Science, August 2021, Elsevier

    Dr Anton Gutakovskii

  12. Effect of the structure and the phase composition on the mechanical properties of Al–Cu–Li alloy laser welds

    Article • Materials Science and Engineering A, March 2021, Elsevier

    Dr Anton Gutakovskii

  13. Resistive switching on individual V2O5nanoparticles encapsulated in fluorinated graphene films

    Article • Physical Chemistry Chemical Physics, January 2021, Royal Society of Chemistry

    Dr Anton Gutakovskii

  14. Selective MOCVD synthesis of VO2 crystals on nanosharp Si structures

    Article • CrystEngComm, January 2021, Royal Society of Chemistry

    Dr Anton Gutakovskii

  15. Recombination and spin dynamics of excitons in thin (Ga,Al)(Sb,As)/AlAs quantum wells with an indirect band gap and type-I band alignment

    Article • Physical Review B, October 2020, American Physical Society (APS)

    Dr Anton Gutakovskii

  16. Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

    Article • AIP Advances, January 2020, American Institute of Physics

    Dr Anton Gutakovskii

  17. Resistive Switching Effect with ON/OFF Current Relation up to 10 9 in 2D Printed Composite Films of Fluorinated Graphene with V 2 O 5 Nanoparticles

    Article • Advanced Electronic Materials, August 2019, Wiley

    Dr Anton Gutakovskii

  18. An Influence of the Si(111)3-4o Vicinal Surface on the Solid Phase Epitaxy of α-FeSi2 Nanorods and their Crystal Parameters

    Article • Key Engineering Materials, June 2019, Trans Tech Publications

    Professor Nikolay G Galkin, Dr Anton Gutakovskii

  19. Silicide phase formation by Mg deposition on amorphous Si. Ab initio calculations, growth process and thermal stability

    Article • Journal of Alloys and Compounds, March 2019, Elsevier

    Dr Anton Gutakovskii

  20. Thermoelectric Properties of Nanostructured Material Based on Si and GaSb

    Article • Defect and Diffusion Forum, September 2018, Trans Tech Publications

    Dr Anton Gutakovskii

  21. On the structure and photoluminescence of dislocations in silicon

    Article • Journal of Applied Physics, August 2018, American Institute of Physics

    Dr Anton Gutakovskii

  22. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type

    Article • Journal of Applied Physics, March 2018, American Institute of Physics

    Dr Anton Gutakovskii

  23. A room-temperature-operated Si LED with β-FeSi2 nanocrystals in the active layer: μW emission power at 1.5 μm

    Article • Journal of Applied Physics, March 2017, American Institute of Physics

    Dr Anton Gutakovskii

  24. Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si(100)

    Article • Journal of Crystal Growth, January 2017, Elsevier

    Dr Anton Gutakovskii

  25. Unexpected travel of Lomer-type dislocations in Ge/Ge x Si 1-x /Si(001) heterostructures

    Article • Thin Solid Films, October 2016, Elsevier

    Dr Anton Gutakovskii

  26. Experimental observation of the dislocation walls in heterostructures with two interfaces: Ge/Ge0.5Si0.510 nm/Si(001) as an example

    Article • Philosophical Magazine Letters, August 2016, Taylor & Francis

    Dr Anton Gutakovskii

  27. Apoptosis-mediated endothelial toxicity but not direct calcification or functional changes in anti-calcification proteins defines pathogenic effects of calcium phosphate bions

    Article • Scientific Reports, June 2016, Nature

    Miss Anna Popova, Dr Anton Gutakovskii, Dr Alexey Golovkin

  28. Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures

    Article • JETP Letters, June 2016, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  29. Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors

    Article • Journal of Physics D Applied Physics, February 2016, Institute of Physics Publishing

    Dr Anton Gutakovskii

  30. Surface-enhanced Raman spectroscopy of semiconductor nanostructures

    Article • Physica E Low-dimensional Systems and Nanostructures, January 2016, Elsevier

    Professor Dietrich RT Zahn, Dr Anton Gutakovskii

  31. InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers

    Article • Journal of Physics Conference Series, November 2015, Institute of Physics Publishing

    Dr Anton Gutakovskii

  32. InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

    Article • Applied Physics Letters, October 2015, American Institute of Physics

    Dr Anton Gutakovskii

  33. Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites

    Article • Scientific Reports, October 2015, Nature

    Professor Nikolay G Galkin, Dr Anton Gutakovskii

  34. Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

    Article • Applied Physics Letters, September 2015, American Institute of Physics

    Dr Anton Gutakovskii

  35. Hemozoin “knobs” in Opisthorchis felineus infected liver

    Article • Parasites & Vectors, September 2015, Springer Science + Business Media

    Dr Anton Gutakovskii, Alexander M Demin

  36. Peculiarities of structure, morphology, and electrochemistry of the doped 5-V spinel cathode materials LiNi0.5-x Mn1.5-y M x+y O4 (M = Co, Cr, Ti; x+y = 0.05) prepared by mechanochemical way

    Article • Journal of Solid State Electrochemistry, September 2015, Springer Science + Business Media

    Dr Anton Gutakovskii

  37. Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

    Article • Semiconductors, June 2015, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  38. The convenient preparation of stable aryl-coated zerovalent iron nanoparticles

    Article • Beilstein Journal of Nanotechnology, May 2015, Beilstein Institut

    Dr Anton Gutakovskii

  39. Electroluminescent 1.5-μm light-emitting diodes based on p +-Si/NC β-FeSi2/n-Si structures

    Article • Semiconductors, April 2015, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  40. Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness

    Article • Physics of the Solid State, April 2015, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  41. Raman, AFM, and TEM profiling of QD multilayer structures

    Article • Materials Research Express, February 2015, Institute of Physics Publishing

    Professor Dietrich RT Zahn, Dr Anton Gutakovskii

  42. High-quality single-crystal diamond-graphite-diamond membranes and devices

    Article • International Journal of Nanotechnology, January 2015, Inderscience Publishers

    Dr Anton Gutakovskii

  43. Formation of Mg silicides on amorphous Si. Origin and role of high pressure in the film growth

    Article • Materials Chemistry and Physics, December 2014, Elsevier

    Dr Anton Gutakovskii

  44. Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

    Article • Applied Physics Letters, October 2014, American Institute of Physics

    Dr Anton Gutakovskii

  45. Synthesis and Characterization of CuxS (x = 1–2) Nanocrystals Formed by the Langmuir–Blodgett Technique

    Article • The Journal of Physical Chemistry C, September 2014, American Chemical Society (ACS)

    Professor Dietrich RT Zahn, Dr Anton Gutakovskii

  46. Structure and Optical Properties of Ca Silicide Films and Si/Ca3Si4/Si(111) Heterostructures

    Article • Solid State Phenomena, March 2014, Trans Tech Publications

    Professor Nikolay G Galkin, Dr Anton Gutakovskii

  47. Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots

    Article • JETP Letters, March 2014, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  48. Specific features of plastic relaxation of a metastable Ge x Si1 − x layer buried between a silicon substrate and a relaxed germanium layer

    Article • Physics of the Solid State, February 2014, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  49. Brief observe on iron silicide growth on amorphous silicon

    Article • physica status solidi c, November 2013, Wiley

    Dr Anton Gutakovskii

  50. Electroluminescence properties of p-Si/β-FeSi2NCs/…/n-Si mesa diodes with embedded multilayers ofβ-FeSi2nanocrystallites

    Article • physica status solidi c, November 2013, Wiley

    Dr Anton Gutakovskii

  51. LiVPO4F/Li3V2(PO4)3 nanostructured composite cathode materials prepared via mechanochemical way

    Article • Journal of Solid State Electrochemistry, August 2013, Springer Science + Business Media

    Dr Anton Gutakovskii

  52. The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

    Article • Microscopy and Microanalysis, August 2013, Oxford University Press (OUP)

    Se-Ahn Song, Dr Anton Gutakovskii

  53. Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface

    Article • Acta Materialia, August 2013, Elsevier

    Dr Anton Gutakovskii

  54. CdZnS quantum dots formed by the Langmuir–Blodgett technique

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, July 2013, American Vacuum Society

    Professor Dietrich RT Zahn, Dr Anton Gutakovskii

  55. High-precision nanoscale length measurement

    Article • Nanotechnologies in Russia, July 2013, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  56. Magnetic field-induced dissipation-free state in superconducting nanostructures

    Article • Nature Communications, February 2013, Springer Science + Business Media

    Dr Anton Gutakovskii

  57. Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films

    Article • Applied Physics Letters, January 2013, American Institute of Physics

    Dr Anton Gutakovskii

  58. Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(001) system and its role in the formation of the core structure of edge misfit dislocations

    Article • Acta Materialia, January 2013, Elsevier

    Dr Anton Gutakovskii

  59. Non-linear conduction in the critical region of the superconductor-insulator transition in TiN thin films

    Article • Journal of Physics Conference Series, December 2012, Institute of Physics Publishing

    Dr Anton Gutakovskii

  60. New system of self-assembled GaSb/GaP quantum dots

    Article • Semiconductors, December 2012, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  61. Formation of iron and iron silicides on silicon and iron surfaces. Role of the deposition rate and volumetric effects

    Article • Applied Physics A, November 2012, Springer Science + Business Media

    Dr Anton Gutakovskii

  62. Crystallization of Amorphous Si Nanoclusters in SiOx Films Using Femtosecond Laser Pulse Annealings

    Article • Journal of Nanoscience and Nanotechnology, November 2012, American Scientific Publishers

    Dr Anton Gutakovskii

  63. Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

    Article • Journal of Applied Physics, October 2012, American Institute of Physics

    Dr Anton Gutakovskii

  64. Evolution of silicon nanoclusters and hydrogen in SiNx:H films: Influence of high hydrostatic pressure under annealing

    Article • Thin Solid Films, July 2012, Elsevier

    Dr Anton Gutakovskii

  65. Novel self-assembled quantum dots in the GaSb/AlAs heterosystem

    Article • JETP Letters, July 2012, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  66. Preparation of thin films of platinum group metals by pulsed MOCVD. I. Deposition of Ir layers

    Article • Journal of Structural Chemistry, July 2012, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  67. Preparation of thin films of platinum group metals by pulsed MOCVD. II. Deposition of Ru layers

    Article • Journal of Structural Chemistry, July 2012, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  68. Influence of shape of GaN/AlN quantum dots on luminescence decay law

    Article • phys stat sol (a), March 2012, Wiley

    Dr Anton Gutakovskii

  69. Structural state of Ge/Si heterosystems with (001), (111), and (7 7 10) interfaces

    Article • Bulletin of the Russian Academy of Sciences Physics, March 2012, Allerton Press

    Dr Anton Gutakovskii

  70. Decomposition of a supersaturated solid solution of Fe in GaAs

    Article • Inorganic Materials, February 2012, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  71. Ge and GexSi1−x islands formation on GexSi1−x solid solution surface

    Article • Thin Solid Films, February 2012, Elsevier

    Dr Anton Gutakovskii

  72. Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

    Article • Journal of Crystal Growth, January 2012, Elsevier

    Dr Anton Gutakovskii

  73. Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE

    Article • Nanoscale Research Letters, January 2012, Springer Science + Business Media

    Dr Anton Gutakovskii

  74. High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

    Article • Journal of Crystal Growth, December 2011, Elsevier

    Dr Anton Gutakovskii

  75. Exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap and type-I band alignment

    Article • Physical Review B, October 2011, American Physical Society (APS)

    Dr Anton Gutakovskii

  76. Growth, structure and luminescence properties of multilayer Si/β-FeSi2NCs/Si/…/Si nanoheterostructures

    Article • Thin Solid Films, October 2011, Elsevier

    Professor Nikolay G Galkin, Dr Anton Gutakovskii

  77. Spontaneous composition modulation during Cd x Hg1−x Te(301) molecular beam epitaxy

    Article • JETP Letters, October 2011, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  78. Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

    Article • Physics of the Solid State, October 2011, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  79. Edge misfit dislocations in Ge x Si1 − x /Si(001) (x ∼ 1) heterostructures: role of buffer Ge y Si1 − y (y < x) interlayer in their formation

    Article • Physics of the Solid State, September 2011, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  80. On triple dislocation nodes observed by TEM in a Ge0.4Si0.6film grown on a slightly deviating (0 0 1)Si substrate

    Article • Philosophical Magazine Letters, August 2011, Taylor & Francis

    Dr Anton Gutakovskii

  81. Defects in the crystal structure of Cd x Hg1 − x Te layers grown on the Si (310) substrates

    Article • Semiconductors, July 2011, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  82. Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

    Article • Journal of Applied Physics, June 2011, American Institute of Physics

    Dr Anton Gutakovskii

  83. Role of cross-slipping in formation of edge dislocations in heteroepitaxial systems GeSi-on-Si(001) and Ge-on-InGaAs/GaAs

    Article • Philosophical Magazine Letters, May 2011, Taylor & Francis

    Dr Anton Gutakovskii

  84. Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy

    Article • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, May 2011, American Vacuum Society

    Dr Anton Gutakovskii

  85. Inclined misfit dislocations in a film/substrate system

    Article • phys stat sol (a), April 2011, Wiley

    Dr Anton Gutakovskii

  86. Nonradiative energy transfer between vertically coupled indirect and direct bandgap InAs quantum dots

    Article • Applied Physics Letters, December 2010, American Institute of Physics

    Dr Anton Gutakovskii

  87. Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4

    Article • Journal of Crystal Growth, October 2010, Elsevier

    Dr Anton Gutakovskii

  88. Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

    Article • JETP Letters, September 2010, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  89. High quality relaxed GaAs quantum dots in GaP matrix

    Article • Applied Physics Letters, July 2010, American Institute of Physics

    Dr Anton Gutakovskii

  90. Formation of edge misfit dislocations in GexSi1−x(x∼0.4–0.8) films grown on misoriented (001)→(111) Si substrates: Features before and after film annealing

    Article • Journal of Applied Physics, June 2010, American Institute of Physics

    Dr Anton Gutakovskii

  91. Precise surface measurements at the nanoscale

    Article • Measurement Science and Technology, March 2010, Institute of Physics Publishing

    Dr Anton Gutakovskii

  92. Heteroepitaxy of Ge x Si1 − x (x ∼ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction

    Article • Physics of the Solid State, January 2010, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  93. 10.1007/s11700-008-1018-9

    Article • January 2010, CrossRef Test Account

    Dr Anton Gutakovskii

  94. 10.1007/s11453-008-1001-5

    Article • January 2010, CrossRef Test Account

    Dr Anton Gutakovskii

  95. Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen

    Article • Semiconductors, September 2009, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  96. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    Article • Thin Solid Films, November 2008, Elsevier

    Dr Anton Gutakovskii

  97. The influence of elastic strains on the growth and properties of vertically ordered Ge “hut”-clusters

    Article • Thin Solid Films, November 2008, Elsevier

    Dr Anton Gutakovskii

  98. Formation of misfit edge dislocations in Ge x Si1 − x films (x ∼ 0.4–0.5) grown on tilted Si(001) → (111) substrates

    Article • Physics of the Solid State, October 2008, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  99. Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals

    Article • Semiconductors, September 2008, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  100. Atomic and energy structure of InAs/AlAs quantum dots

    Article • Physical Review B, August 2008, American Physical Society (APS)

    Dr Anton Gutakovskii

  101. Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (001)→(111) Si substrates

    Article • Journal of Crystal Growth, July 2008, Elsevier

    Dr Anton Gutakovskii

  102. Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x∕Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

    Article • Applied Physics Letters, March 2008, American Institute of Physics

    Dr Anton Gutakovskii

  103. Investigation of Multilayer Silicon Structures with Buried Iron Silicide Nanocrystallites: Growth, Structure, and Properties

    Article • Journal of Nanoscience and Nanotechnology, February 2008, American Scientific Publishers

    Dr Anton Gutakovskii, Vladimir Korobtsov

  104. Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

    Article • Semiconductors, January 2008, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  105. Application of high-resolution electron microscopy for visualization and quantitative analysis of strain fields in heterostructures

    Article • Bulletin of the Russian Academy of Sciences Physics, October 2007, Allerton Press

    Dr Anton Gutakovskii

  106. New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons

    Article • Advanced Materials Research, October 2007, Trans Tech Publications

    Dr Anton Gutakovskii

  107. Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant

    Article • Semiconductors, October 2007, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  108. Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates

    Article • Semiconductors, September 2007, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  109. Morphological transformations of vanadium oxide films during low-temperature reduction in hydrogen electron cyclotron resonance plasma

    Article • Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques, August 2007, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  110. Silicon layers atop iron silicide nanoislands on Si(100) substrate: Island formation, silicon growth, morphology and structure

    Article • Thin Solid Films, July 2007, Elsevier

    Dr Anton Gutakovskii

  111. Role of the dislocation screw component in the formation of the dislocation structure in Ge- and Si-based semiconductor heterosystems

    Article • Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques, June 2007, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  112. VARIATION OF IN-PLANE LATTICE CONSTANT OF Si/Ge/Si HETEROSTRUCTURES WITH Ge QUANTUM DOTS

    Article • International Journal of Nanoscience, June 2007, World Scientific Pub Co Pte Lt

    Dr Anton Gutakovskii

  113. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

    Article • Applied Physics Letters, March 2007, American Institute of Physics

    Dr Anton Gutakovskii

  114. Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition

    Article • Semiconductors, March 2007, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  115. Narrowing of ground energy level distribution in an array of InAs/AlAs QDs by post grown annealing

    Article • physica status solidi c, December 2006, Wiley

    Dr Anton Gutakovskii

  116. Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value

    Article • Journal of Crystal Growth, December 2006, Elsevier

    Dr Anton Gutakovskii

  117. Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy

    Article • Journal of Crystal Growth, August 2006, Elsevier

    Dr Anton Gutakovskii

  118. <title>Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si0<formula><inf><roman>2</roman></inf></formula> films</title>

    Article • May 2006, SPIE

    Dr Anton Gutakovskii

  119. <title>Ge nanoclusters in GeO<formula><inf><roman>2</roman></inf></formula>: formation and optical properties</title>

    Article • May 2006, SPIE

    Dr Anton Gutakovskii

  120. Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects: evidence for lateral inter-dot transport

    Article • Semiconductor Science and Technology, March 2006, Institute of Physics Publishing

    Dr Anton Gutakovskii

  121. Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy

    Article • Semiconductors, March 2006, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  122. Interface phonons in semiconductor nanostructures with quantum dots

    Article • Journal of Experimental and Theoretical Physics, September 2005, Pleiades Publishing Ltd

    Professor Dietrich RT Zahn, Dr Anton Gutakovskii

  123. Observation of antiphase domains in CdxHg1−x Te films on silicon by the phase contrast method in atomic force microscopy

    Article • JETP Letters, September 2005, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  124. Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

    Article • Surface and Coatings Technology, June 2005, Elsevier

    Dr Anton Gutakovskii

  125. Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation

    Article • Journal of Crystal Growth, June 2005, Elsevier

    Dr Anton Gutakovskii

  126. The formation of silicon nanocrystals in SiO2 layers by the implantation of Si ions with intermediate heat treatments

    Article • Semiconductors, May 2005, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  127. Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures

    Article • JETP Letters, February 2005, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  128. Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO[sub 2] Films

    Article • Semiconductors, January 2005, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  129. Formation of Ultrasmall Germanium Nanoislands with a High Density on an Atomically Clean Surface of Silicon Oxide

    Article • Physics of the Solid State, January 2005, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  130. Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix

    Article • JETP Letters, January 2005, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  131. Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

    Article • Applied Physics Letters, December 2004, American Institute of Physics

    Dr Anton Gutakovskii

  132. Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

    Article • Journal of Applied Physics, December 2004, American Institute of Physics

    Dr Anton Gutakovskii

  133. Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

    Article • Thin Solid Films, November 2004, Elsevier

    Dr Anton Gutakovskii

  134. Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

    Article • Applied Physics Letters, June 2004, American Institute of Physics

    Dr Anton Gutakovskii

  135. Surface morphology transitions induced by ion beam action during Ge/Si MBE

    Article • May 2004, SPIE

    Dr Anton Gutakovskii

  136. MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION

    Article • International Journal of Nanoscience, February 2004, World Scientific Pub Co Pte Lt

    Dr Anton Gutakovskii

  137. Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

    Article • Semiconductors, January 2004, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  138. Growth and structure of Ge nanoislands on an atomically clean silicon oxide surface

    Article • Physics of the Solid State, January 2004, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  139. Optimization of the plastic relaxation of misfit stresses in GexSi1−x /Si(001) (x≤0.61) heterostructures

    Article • Technical Physics Letters, January 2004, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  140. Defects in silicon heat-treated under uniform stress and irradiated with fast neutrons

    Article • phys stat sol (a), September 2003, Wiley

    Dr Anton Gutakovskii

  141. Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD

    Article • Surface and Coatings Technology, September 2003, Elsevier

    Dr Anton Gutakovskii

  142. TEM study of incommensurate phases in minerals: implication for materials science

    Article • Materials Chemistry and Physics, August 2003, Elsevier

    Dr Anton Gutakovskii

  143. InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth

    Article • Semiconductor Science and Technology, April 2003, Institute of Physics Publishing

    Dr Anton Gutakovskii

  144. Optical vibration modes in (Cd, Pb, Zn)S quantum dots in the Langmuir-Blodgett matrix

    Article • Physics of the Solid State, October 2002, Pleiades Publishing Ltd

    Professor Dietrich RT Zahn, Dr Anton Gutakovskii

  145. Formation of Si nanocrystals in a-Si films using excimer laser

    Article • May 2002, SPIE

    Dr Anton Gutakovskii

  146. X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation

    Article • Semiconductors, May 2002, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  147. Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si(100) buffer layer

    Article • Journal of Applied Physics, April 2002, American Institute of Physics

    Dr Anton Gutakovskii

  148. Influence of the misfit-dislocation screw component on the formation of threading dislocations in semiconductor heterostructures

    Article • Semiconductors, March 2002, Pleiades Publishing Ltd

    Dr Anton Gutakovskii

  149. Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

    Article • August 2001, SPIE

    Dr Anton Gutakovskii

  150. Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

    Article • Thin Solid Films, July 2001, Elsevier

    Dr Anton Gutakovskii

  151. In Situ HREM Irradiation Study of an Intrinsic Point Defects Clustering in FZ-Si

    Article • Crystal Research and Technology, July 2000, Wiley

    Dr Anton Gutakovskii

  152. Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

    Article • Materials Science and Engineering B, April 2000, Elsevier

    Dr Anton Gutakovskii

  153. GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon

    Article • Applied Physics Letters, December 1999, American Institute of Physics

    Dr Anton Gutakovskii

  154. Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

    Article • Microelectronic Engineering, September 1999, Elsevier

    Dr Anton Gutakovskii