All Stories

  1. Codelivery Material System of Polymer Microfiber Structures for Synergistic Localized Therapy of Glioblastoma

    Article • ACS Biomaterials Science & Engineering, May 2026, American Chemical Society (ACS)

    Professor Andrew J Steckl

  2. Combined Delivery of CuO Nanoparticles and HIF‐1α Inhibitor Acriflavine for Synergistic Local Treatment of Glioblastoma

    Article • Advanced NanoBiomed Research, October 2025, Wiley

    Professor Andrew J Steckl

  3. Point-Of-Care Sensors for Salivary Endotoxin Detection

    Article • October 2025, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  4. Picogram-level detection of endotoxin in human saliva using ultrasensitive surface enhanced Raman scattering in lateral flow assay devices

    Article • RSC Advances, January 2025, Royal Society of Chemistry

    Professor Andrew J Steckl

  5. Skin‐Compatible Carbopol Electrospun Fiber Membranes with pH‐Dependent Rheological Properties for Biomedical Applications

    Article • Macromolecular Materials and Engineering, November 2024, Wiley

    Professor Andrew J Steckl

  6. Flow-Cell Sensor for Bacteria Detection Using Gate-Modified Organic Electrochemical Transistor

    Article • IEEE Sensors Journal, March 2024, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  7. Improved point-of-care detection of P. gingivalis using optimized surface-enhanced Raman scattering in lateral flow assays

    Article • Sensors & Diagnostics, January 2024, Royal Society of Chemistry

    Professor Andrew J Steckl

  8. Salivary endotoxin detection using combined mono/polyclonal antibody-based sandwich-type lateral flow immunoassay device

    Article • Sensors & Diagnostics, January 2023, Royal Society of Chemistry

    Professor Andrew J Steckl

  9. The effect of nutrient broth media on PEDOT:PSS gated OECTs for whole-cell bacteria detection

    Article • Biosensors and Bioelectronics X, December 2022, Elsevier

    Professor Andrew J Steckl

  10. (Electronics and Photonics Division Award) Let There be Light; Research at the Intersection of Electronics and Photonics

    Article • ECS Meeting Abstracts, July 2022, The Electrochemical Society

    Professor Andrew J Steckl

  11. (Invited) Salivary Lipopolysaccharide (LPS) Detection Using Lateral Flow Sandwich-Based Immunoassay Point-of-Care Devices

    Article • ECS Meeting Abstracts, July 2022, The Electrochemical Society

    Professor Andrew J Steckl

  12. Electrospinning of cyanoacrylate tissue adhesives for human dural repair in endonasal surgery

    Article • Journal of Biomedical Materials Research Part B Applied Biomaterials, October 2021, Wiley

    Professor Andrew J Steckl

  13. (Keynote) Blood, Sweat and Tears... – Sensing of Human Performance Biomarkers in Bodily Fluids Using Point-of-Use Devices

    Article • ECS Meeting Abstracts, May 2021, The Electrochemical Society

    Professor Andrew J Steckl

  14. Development of Point-of-Care Lateral Flow Assay Devices for Salivary Endotoxin Detection

    Article • ECS Meeting Abstracts, May 2021, The Electrochemical Society

    Professor Andrew J Steckl

  15. Universal Bacterial Detection Utilizing PEDOT:PSS-Based Organic Electrochemical Transistors

    Article • ECS Meeting Abstracts, May 2021, The Electrochemical Society

    Professor Andrew J Steckl

  16. Aptamer-Based Lateral Flow Biosensor for Rapid Detection of Salivary Cortisol

    Article • ACS Omega, December 2020, American Chemical Society (ACS)

    Professor Andrew J Steckl

  17. In vitro and in vivo evaluation of microneedles coated with electrosprayed micro/nanoparticles for medical skin treatments

    Article • Journal of Microencapsulation, August 2020, Taylor & Francis

    Professor Andrew J Steckl

  18. Lateral flow assay using aptamer-based sensing for on-site detection of dopamine in urine

    Article • Analytical Biochemistry, May 2020, Elsevier

    Professor Andrew J Steckl

  19. Self-inflating floating nanofiber membranes for controlled drug delivery

    Article • International Journal of Pharmaceutics, April 2020, Elsevier

    Professor Andrew J Steckl

  20. Multi-layered core-sheath fiber membranes for controlled drug release in the local treatment of brain tumor

    Article • Scientific Reports, November 2019, Springer Science + Business Media

    Professor Andrew J Steckl

  21. Cover Feature: Coaxial Electrospinning Formation of Complex Polymer Fibers and their Applications (ChemPlusChem 10/2019)

    Article • ChemPlusChem, August 2019, Wiley

    Professor Andrew J Steckl

  22. Coaxial Electrospinning Formation of Complex Polymer Fibers and their Applications

    Article • ChemPlusChem, July 2019, Wiley

    Professor Andrew J Steckl

  23. Label-Free Optical Detection of Multiple Biomarkers in Sweat, Plasma, Urine, and Saliva

    Article • ACS Sensors, March 2019, American Chemical Society (ACS)

    Professor Andrew J Steckl

  24. Aptamer-based lateral flow assay for point of care cortisol detection in sweat

    Article • Sensors and Actuators B Chemical, March 2019, Elsevier

    Professor Andrew J Steckl

  25. Stress Biomarkers in Biological Fluids and Their Point-of-Use Detection

    Article • ACS Sensors, September 2018, American Chemical Society (ACS)

    Professor Andrew J Steckl

  26. Paper Microfluidics for Point-of-Care Blood-Based Analysis and Diagnostics

    Article • Analytical Chemistry, September 2018, American Chemical Society (ACS)

    Professor Andrew J Steckl

  27. Absorption of Ethylene on Membranes Containing Potassium Permanganate Loaded into Alumina-Nanoparticle-Incorporated Alumina/Carbon Nanofibers

    Article • Journal of Agricultural and Food Chemistry, May 2018, American Chemical Society (ACS)

    Professor Andrew J Steckl

  28. Engineering a simple lateral flow device for animal blood coagulation monitoring

    Article • Biomicrofluidics, January 2018, American Institute of Physics

    Professor Andrew J Steckl

  29. Correcting the effect of hematocrit in whole blood coagulation analysis on paper-based lateral flow device

    Article • Analytical Methods, January 2018, Royal Society of Chemistry

    Professor Andrew J Steckl

  30. Quantitative Detection in Lateral Flow Immunoassay Using Integrated Organic Optoelectronics

    Article • IEEE Sensors Journal, December 2017, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  31. Selective pH-Responsive Core–Sheath Nanofiber Membranes for Chem/Bio/Med Applications: Targeted Delivery of Functional Molecules

    Article • ACS Applied Materials & Interfaces, November 2017, American Chemical Society (ACS)

    Professor Andrew J Steckl

  32. Stimuli-Responsive Self-Immolative Polymer Nanofiber Membranes Formed by Coaxial Electrospinning

    Article • ACS Applied Materials & Interfaces, March 2017, American Chemical Society (ACS)

    Professor Andrew J Steckl

  33. Flow reproducibility of whole blood and other bodily fluids in simplified no reaction lateral flow assay devices

    Article • Biomicrofluidics, March 2017, American Institute of Physics

    Professor Andrew J Steckl

  34. Improved Performance of OLEDs on Cellulose/Epoxy Substrate Using Adenine as a Hole Injection Layer

    Article • ACS Photonics, February 2015, American Chemical Society (ACS)

    Professor Andrew J Steckl

  35. Exploring the Potential of Nucleic Acid Bases in Organic Light Emitting Diodes

    Article • Advanced Materials, December 2014, Wiley

    Professor Andrew J Steckl

  36. Microbial Power‐Generating Capabilities on Micro‐/Nano‐Structured Anodes in Micro‐Sized Microbial Fuel Cells

    Article • Fuel Cells, September 2014, Wiley

    Professor Andrew J Steckl

  37. Magnetic Particles as Liquid Carriers in the Microfluidic Lab-in-Tube Approach To Detect Phase Change

    Article • ACS Applied Materials & Interfaces, May 2014, American Chemical Society (ACS)

    Professor Andrew J Steckl

  38. Latest advances in biomaterials: from deoxyribonucleic acid to nucleobases

    Article • March 2014, SPIE

    Professor Andrew J Steckl

  39. High brightness phosphorescent organic light emitting diodes on transparent and flexible cellulose films

    Article • Nanotechnology, February 2014, Institute of Physics Publishing

    Professor Andrew J Steckl

  40. Pentacene organic thin-film transistors on flexible paper and glass substrates

    Article • Nanotechnology, February 2014, Institute of Physics Publishing

    Professor Andrew J Steckl

  41. p-type GaN grown by phase shift epitaxy

    Article • Applied Physics Letters, January 2014, American Institute of Physics

    Professor Andrew J Steckl

  42. Blood coagulation screening using a paper-based microfluidic lateral flow device

    Article • Lab on a Chip, January 2014, Royal Society of Chemistry

    Professor Andrew J Steckl

  43. Investigation of DNA nucleobases-thin films for potential application in electronics and photonics

    Article • October 2013, SPIE

    Professor Andrew J Steckl

  44. Electrowetting on non‐fluorinated hydrophobic surfaces

    Article • Journal of the Society for Information Display, October 2013, Wiley

    Professor Andrew J Steckl

  45. Versatile electrowetting arrays for smart window applications-from small to large pixels on fixed and flexible substrates

    Article • Solar Energy Materials and Solar Cells, October 2013, Elsevier

    Professor Andrew J Steckl

  46. Triaxial Electrospun Nanofiber Membranes for Controlled Dual Release of Functional Molecules

    Article • ACS Applied Materials & Interfaces, August 2013, American Chemical Society (ACS)

    Professor Andrew J Steckl

  47. Lightweight electrowetting display on ultra‐thin glass substrate

    Article • Journal of the Society for Information Display, May 2013, Wiley

    Professor Andrew J Steckl

  48. Enhanced Performance of Micro‐Electro‐Mechanical‐Systems (MEMS) Microbial Fuel Cells Using Electrospun Microfibrous Anode and Optimizing Operation

    Article • Fuel Cells, April 2013, Wiley

    Professor Andrew J Steckl

  49. Circuits on cellulose

    Article • IEEE Spectrum, February 2013, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  50. Electrowetting on Flexible Substrates

    Article • Journal of Adhesion Science and Technology, May 2012, Taylor & Francis

    Professor Andrew J Steckl

  51. Triggered Release of Molecules across Droplet Interface Bilayer Lipid Membranes Using Photopolymerizable Lipids

    Article • Langmuir, May 2012, American Chemical Society (ACS)

    Professor Andrew J Steckl

  52. Nanofiber‐Based Bulk‐Heterojunction Organic Solar Cells Using Coaxial Electrospinning

    Article • Advanced Energy Materials, May 2012, Wiley

    Professor Andrew J Steckl

  53. Photocatalytic cellulosic electrospun fibers for the degradation of potent cyanobacteria toxin microcystin-LR

    Article • Journal of Materials Chemistry, January 2012, Royal Society of Chemistry

    Professor Andrew J Steckl

  54. Deactivating Chemical Agents Using Enzyme-Coated Nanofibers Formed by Electrospinning

    Article • ACS Applied Materials & Interfaces, December 2011, American Chemical Society (ACS)

    Professor Andrew J Steckl

  55. Fabrication of natural DNA-containing organic light emitting diodes

    Article • September 2011, SPIE

    Professor Andrew J Steckl

  56. Flexible electrowetting and electrowetting on flexible substrates

    Article • February 2011, SPIE

    Professor Andrew J Steckl

  57. Immobilization of Stable Thylakoid Vesicles in Conductive Nanofibers by Electrospinning

    Article • Biomacromolecules, January 2011, American Chemical Society (ACS)

    Professor Andrew J Steckl

  58. Voltage Control of Droplet Interface Bilayer Lipid Membrane Dimensions

    Article • Langmuir, December 2010, American Chemical Society (ACS)

    Professor Andrew J Steckl

  59. Eu-Doped GaN Films Grown by Phase Shift Epitaxy

    Article • Applied Physics Express, December 2010, Institute of Physics Publishing

    Professor Andrew J Steckl

  60. Electrowetting on Paper for Electronic Paper Display

    Article • ACS Applied Materials & Interfaces, October 2010, American Chemical Society (ACS)

    Professor Andrew J Steckl

  61. Dose effects in electron beam irradiation of DNA-complex thin films

    Article • Applied Physics Letters, August 2010, American Institute of Physics

    Professor Andrew J Steckl

  62. Photocatalytic Self Cleaning Textile Fibers by Coaxial Electrospinning

    Article • ACS Applied Materials & Interfaces, August 2010, American Chemical Society (ACS)

    Professor Andrew J Steckl

  63. Three-color electrowetting display device for electronic paper

    Article • Applied Physics Letters, July 2010, American Institute of Physics

    Professor Andrew J Steckl

  64. Complementary Electrowetting Devices on Plasma-Treated Fluoropolymer Surfaces

    Article • Langmuir, March 2010, American Chemical Society (ACS)

    Professor Andrew J Steckl

  65. Effect of growth conditions on Eu3+ luminescence in GaN

    Article • Journal of Crystal Growth, February 2010, Elsevier

    Professor Andrew J Steckl

  66. Electrical and magnetic properties of GaN codoped with Eu and Si

    Article • Journal of Applied Physics, January 2010, American Institute of Physics

    Professor Andrew J Steckl

  67. Immunoassay on Free-Standing Electrospun Membranes

    Article • ACS Applied Materials & Interfaces, December 2009, American Chemical Society (ACS)

    Professor Andrew J Steckl

  68. Role of Surfactants in the Interaction of Dye Molecules in Natural DNA Polymers

    Article • Langmuir, August 2009, American Chemical Society (ACS)

    Professor Andrew J Steckl

  69. Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy

    Article • Applied Physics B Photophysics and Laser Chemistry, June 2009, Springer Science + Business Media

    Professor Andrew J Steckl

  70. Superhydrophobic and Oleophobic Fibers by Coaxial Electrospinning

    Article • Langmuir, April 2009, American Chemical Society (ACS)

    Professor Andrew J Steckl

  71. Direct and indirect photoluminescence excitation and ultraviolet emission from Tm-doped AlxGa1−xN

    Article • Journal of Applied Physics, April 2009, American Institute of Physics

    Dr. Henry O Everitt, Professor Andrew J Steckl

  72. Effect ofTm3+-induced defe...

    Article • Physical Review B, March 2009, American Physical Society (APS)

    Dr. Henry O Everitt, Professor Andrew J Steckl

  73. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys

    Article • Applied Physics Letters, March 2009, American Institute of Physics

    Professor Andrew J Steckl

  74. Effect of Si codoping on Eu3+ luminescence in GaN

    Article • Journal of Applied Physics, February 2009, American Institute of Physics

    Professor Andrew J Steckl

  75. Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots

    Article • Journal of Applied Physics, February 2009, American Institute of Physics

    Professor Andrew J Steckl

  76. High speed nanofluidic protein accumulator

    Article • Lab on a Chip, January 2009, Royal Society of Chemistry

    Professor Andrew J Steckl

  77. Optical and structural characterization of blue-emitting Mg2+- and Zn2+-doped GaN nanoparticles

    Article • Journal of Materials Chemistry, January 2009, Royal Society of Chemistry

    Professor Andrew J Steckl

  78. Chirality of sulforhodamine dye molecules incorporated in DNA thin films

    Article • Applied Physics Letters, November 2008, American Institute of Physics

    Professor Andrew J Steckl

  79. Direct write electron beam patterning of DNA complex thin films

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, November 2008, American Vacuum Society

    Professor Andrew J Steckl

  80. Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation

    Article • Applied Physics Letters, August 2008, American Institute of Physics

    Professor Andrew J Steckl

  81. Electrospun Biopolymer-Based Micro/Nanofibers

    Article • July 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  82. I-V and Gain Characteristics of Electrowetting-Based Liquid Field Effect Transistor

    Article • July 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  83. NanoBioMaterials - From BioLEDs to Tissue Engineering

    Article • July 2008, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  84. A nearly ideal phosphor-converted white light-emitting diode

    Article • Applied Physics Letters, April 2008, American Institute of Physics

    Professor Andrew J Steckl

  85. Mg2+‐Doped GaN Nanoparticles as Blue‐Light Emitters: A Method to Avoid Sintering at High Temperatures

    Article • Small, January 2008, Wiley

    Professor Andrew J Steckl

  86. Effect of process conditions on gain and loss in GaN:Eu cavities on different substrates

    Article • phys stat sol (a), January 2008, Wiley

    Professor Andrew J Steckl

  87. Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys

    Article • Applied Physics Letters, November 2007, American Institute of Physics

    Professor Andrew J Steckl

  88. Spectroscopic and energy transfer studies of Eu3+ centers in GaN

    Article • Journal of Applied Physics, October 2007, American Institute of Physics

    Dr. Henry O Everitt, Professor Andrew J Steckl

  89. A comparative study of electrode effects on the electrical and luminescent characteristics of Alq3/TPD OLED: Improvements due to conductive polymer (PEDOT) anode

    Article • Journal of Luminescence, September 2007, Elsevier

    Professor Andrew J Steckl

  90. Prospects for rare earth doped GaN lasers on Si

    Article • Materials Today, July 2007, Elsevier

    Professor Andrew J Steckl

  91. ELiXIR-Solid-State Luminaire With Enhanced Light Extraction by Internal Reflection

    Article • Journal of Display Technology, June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  92. Guest Editorial

    Article • Journal of Display Technology, June 2007, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  93. Color tunable organic light emitting diodes using Eu complex doping

    Article • Solid-State Electronics, March 2007, Elsevier

    Professor Andrew J Steckl

  94. Identification of defect‐trap‐related europium sites in gallium nitride

    Article • physica status solidi c, March 2007, Wiley

    Professor Andrew J Steckl

  95. Photoluminescence and lasing from deoxyribonucleic acid (DNA) thin films doped with sulforhodamine

    Article • Applied Optics, March 2007, Optical Society of America (OSA)

    Professor Andrew J Steckl

  96. Stimulated emission of sulforhodamine 640 doped DNA distributed feedback (DFB) laser devices

    Article • February 2007, SPIE

    Professor Andrew J Steckl

  97. Liquid-state field-effect transistors using electrowetting

    Article • Applied Physics Letters, January 2007, American Institute of Physics

    Professor Andrew J Steckl

  98. DNA – a new material for photonics?

    Article • Nature Precedings, January 2007, Springer Science + Business Media

    Professor Andrew J Steckl

  99. Optical and magnetic properties of Eu-doped GaN

    Article • Applied Physics Letters, September 2006, American Institute of Physics

    Professor Andrew J Steckl

  100. Organic light emitting diode with a DNA biopolymer electron blocking layer

    Article • August 2006, SPIE

    Professor Andrew J Steckl

  101. Maximizing<tex>$hbox Alq_3$</tex>OLED Internal and External Efficiencies: Charge Balanced Device Structure and Color Conversion Outcoupling Lenses

    Article • Journal of Display Technology, June 2006, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  102. Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

    Article • Optical Materials, May 2006, Elsevier

    Professor Andrew J Steckl

  103. Visible lasing from GaN:Eu optical cavities on sapphire substrates

    Article • Optical Materials, May 2006, Elsevier

    Professor Andrew J Steckl

  104. Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as an electron blocking layer

    Article • Applied Physics Letters, April 2006, American Institute of Physics

    Professor Andrew J Steckl

  105. Red photoluminescence emission of laser dye doped DNA and PMMA

    Article • February 2006, SPIE

    Professor Andrew J Steckl

  106. Red/blue electroluminescence from europium-doped organic light emitting diodes

    Article • February 2006, SPIE

    Professor Andrew J Steckl

  107. GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

    Article • Thin Solid Films, February 2006, Elsevier

    Professor Andrew J Steckl

  108. Site specific Eu3+ stimulated emission in GaN host

    Article • Applied Physics Letters, January 2006, American Institute of Physics

    Professor Andrew J Steckl

  109. Growth temperature dependence of optical modal gain and loss in GaN:Eu active medium on Si

    Article • Optics Express, January 2006, Optical Society of America (OSA)

    Professor Andrew J Steckl

  110. Demonstration of a visible laser on silicon using Eu-doped GaN thin films

    Article • Journal of Applied Physics, September 2005, American Institute of Physics

    Professor Andrew J Steckl

  111. Light Wave Coupled Flat Panel Displays and Solid-State Lighting Using Hybrid Inorganic/Organic Materials

    Article • Journal of Display Technology, September 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  112. DNA-based materials for electro-optic applications: current status

    Article • August 2005, SPIE

    Professor Andrew J Steckl

  113. Molecular binding and enhanced photoluminescence of bromocresol purple in marine derived DNA

    Article • August 2005, SPIE

    Professor Andrew J Steckl

  114. P‐117: Electrowetting‐Based Pixelation for Light Wave Coupling Displays

    Article • SID Symposium Digest of Technical Papers, May 2005, Wiley

    Professor Andrew J Steckl

  115. Cathodoluminescence and its temperature dependence in Tm‐doped Al x Ga 1– x N thin films

    Article • physica status solidi c, April 2005, Wiley

    Professor Andrew J Steckl

  116. Spectroscopic studies of the infrared emission from Tm doped Al x Ga 1– x N thin films

    Article • physica status solidi c, April 2005, Wiley

    Professor Andrew J Steckl

  117. Transmission electron microscopy of GaN layers in‐situ doped with Er during plasma assisted MBE

    Article • physica status solidi c, April 2005, Wiley

    Professor Andrew J Steckl

  118. High-transmission electrowetting light valves

    Article • Applied Physics Letters, April 2005, American Institute of Physics

    Professor Andrew J Steckl

  119. Optical properties of Er in Er-doped Zn/sub 2/Si/sub 0.5/Ge/sub 0.5/O/sub 4/ waveguide amplifiers

    Article • Journal of Lightwave Technology, March 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  120. High Brightness ZnS and GaN Electroluminescent Devices Using PZT Thick Dielectric Layers

    Article • IEEE Transactions on Electron Devices, February 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  121. Effect of optical excitation energy on the red luminescence of Eu3+ in GaN

    Article • Applied Physics Letters, January 2005, American Institute of Physics

    Dr. Henry O Everitt, Professor Andrew J Steckl

  122. Light emission from rare earth lumophores in inorganic and organic hosts

    Article • January 2005, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  123. Intense switchable fluorescence in light wave coupled electrowetting devices

    Article • Applied Physics Letters, December 2004, American Institute of Physics

    Professor Andrew J Steckl

  124. Laser action in Eu-doped GaN thin-film cavity at room temperature

    Article • Applied Physics Letters, November 2004, American Institute of Physics

    Professor Andrew J Steckl

  125. Photoluminescence and excitation spectroscopy of the 1.5  μm Er-related band in MBE-grown GaN layers

    Article • Superlattices and Microstructures, October 2004, Elsevier

    Professor Andrew J Steckl

  126. Temperature dependence of energy transfer mechanisms in Eu-doped GaN

    Article • Journal of Applied Physics, June 2004, American Institute of Physics

    Dr. Henry O Everitt, Professor Andrew J Steckl

  127. Fabrication and performance characteristics of black‐dielectric electroluminescent 160 × 80‐pixel displays

    Article • Journal of the Society for Information Display, March 2004, Wiley

    Professor Andrew J Steckl

  128. Optical amplification and electroluminescence at 1.54 μm in Er-doped zinc silicate germanate on silicon

    Article • Applied Physics Letters, March 2004, American Institute of Physics

    Professor Andrew J Steckl

  129. Effect of trimethylsilane flow rate on the growth of SiC thin-films for fiber-optic temperature sensors

    Article • Journal of Microelectromechanical Systems, December 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  130. New spectroscopic data of erbium ions in GaN thin films

    Article • Materials Science and Engineering B, December 2003, Elsevier

    Professor Andrew J Steckl

  131. Photoluminescence properties of in situ Tm-doped AlxGa1−xN

    Article • Applied Physics Letters, December 2003, American Institute of Physics

    Professor Andrew J Steckl

  132. Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN

    Article • Materials Science and Engineering B, December 2003, Elsevier

    Professor Andrew J Steckl

  133. SiC thin-film Fabry-Perot interferometer for fiber-optic temperature sensor

    Article • IEEE Transactions on Electron Devices, October 2003, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  134. Enhanced blue emission from Tm-doped AlxGa1−xN electroluminescent thin films

    Article • Applied Physics Letters, September 2003, American Institute of Physics

    Professor Andrew J Steckl

  135. Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition

    Article • Applied Physics Letters, July 2003, American Institute of Physics

    Professor Andrew J Steckl

  136. Spectral and time-resolved photoluminescence studies of Eu-doped GaN

    Article • Applied Physics Letters, March 2003, American Institute of Physics

    Professor Andrew J Steckl

  137. Three-color integration on rare-earth-doped GaN electroluminescent thin films

    Article • Applied Physics Letters, January 2003, American Institute of Physics

    Professor Andrew J Steckl

  138. Selective enhancement of blue electroluminescence from GaN:Tm

    Article • Applied Physics Letters, January 2003, American Institute of Physics

    Professor Andrew J Steckl

  139. Focused ion beam fabricated microgratings for integrated optics applications

    Article • IEEE Journal of Selected Topics in Quantum Electronics, November 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  140. Photoluminescent and electroluminescent Zn/sub 2/Si/sub 0.5/Ge/sub 0.5/O/sub 4/:Mn thin films for integrated optic devices

    Article • IEEE Journal of Selected Topics in Quantum Electronics, November 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  141. Enhanced blue and green emission in rare-earth-doped GaN electroluminescent devices by optical photopumping

    Article • Applied Physics Letters, September 2002, American Institute of Physics

    Professor Andrew J Steckl

  142. Rare-earth-doped GaN switchable color electroluminescent devices

    Article • IEEE Transactions on Electron Devices, September 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  143. Contrast-enhancement in black dielectric electroluminescent devices

    Article • IEEE Transactions on Electron Devices, August 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  144. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

    Article • IEEE Journal of Selected Topics in Quantum Electronics, July 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  145. Thermal quenching of photoluminescence from Er-doped GaN thin films

    Article • Journal of Alloys and Compounds, July 2002, Elsevier

    Professor Andrew J Steckl

  146. Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielectric layer

    Article • IEEE Transactions on Electron Devices, April 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  147. In-situ Er-doped GaN optical storage devices using high-resolution focused ion beam milling

    Article • Optical Engineering, April 2002, SPIE

    Professor Andrew J Steckl

  148. Lateral color integration on rare-earth-doped GaN electroluminescent thin films

    Article • Applied Physics Letters, March 2002, American Institute of Physics

    Professor Andrew J Steckl

  149. Ga flux dependence of Er-doped GaN luminescent thin films

    Article • Applied Physics Letters, February 2002, American Institute of Physics

    Professor Andrew J Steckl

  150. Growth-temperature dependence of Er-doped GaN luminescent thin films

    Article • Applied Physics Letters, January 2002, American Institute of Physics

    Professor Andrew J Steckl

  151. Temperature behavior of visible and infrared electroluminescent devices fabricated on erbium-doped GaN

    Article • IEEE Transactions on Electron Devices, January 2002, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  152. GaN focused ion beam micromachining with gas-assisted etching

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, November 2001, American Vacuum Society

    Professor Andrew J Steckl

  153. Mg–Ga liquid metal ion source for implantation doping of GaN

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, November 2001, American Vacuum Society

    Professor Andrew J Steckl

  154. Room-temperature-grown rare-earth-doped GaN luminescent thin films

    Article • Applied Physics Letters, September 2001, American Institute of Physics

    Professor Andrew J Steckl

  155. Optimum Er concentration for in situ doped GaN visible and infrared luminescence

    Article • Applied Physics Letters, August 2001, American Institute of Physics

    Professor Andrew J Steckl

  156. Multiple color capability from rare earth-doped gallium nitride

    Article • Materials Science and Engineering B, April 2001, Elsevier

    Professor Andrew J Steckl

  157. Rare earth doped semiconductors III

    Article • Materials Science and Engineering B, April 2001, Elsevier

    Professor Andrew J Steckl

  158. Spectroscopic studies of the visible and infrared luminescence from Er doped GaN

    Article • Materials Science and Engineering B, April 2001, Elsevier

    Professor Andrew J Steckl

  159. Digital thin-film color optical memory

    Article • Applied Physics Letters, January 2001, American Institute of Physics

    Professor Andrew J Steckl

  160. CMOS-based photoreceiver arrays for page-oriented optical storage access

    Article • IEEE Photonics Technology Letters, September 2000, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  161. RBS/Channeling study of Er doped GaN films grown by MBE on Si(111) substrates

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, March 2000, Elsevier

    Professor Andrew J Steckl

  162. Formation of SiC SOI Structures by Direct Growth on Insulating Layers

    Article • Journal of The Electrochemical Society, January 2000, The Electrochemical Society

    Professor Andrew J Steckl

  163. In Situ N[sub 2]-Doping of SiC Films Grown on Si(111) by Chemical Vapor Deposition from Organosilanes

    Article • Journal of The Electrochemical Society, January 2000, The Electrochemical Society

    Professor Andrew J Steckl

  164. Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane

    Article • Journal of The Electrochemical Society, March 1999, The Electrochemical Society

    Professor Andrew J Steckl

  165. High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

    Article • IEEE Transactions on Electron Devices, March 1999, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  166. Green electroluminescence from Er-doped GaN Schottky barrier diodes

    Article • Applied Physics Letters, October 1998, American Institute of Physics

    Professor Andrew J Steckl

  167. Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates

    Article • Applied Physics Letters, October 1998, American Institute of Physics

    Professor Andrew J Steckl

  168. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

    Article • Applied Physics Letters, September 1998, American Institute of Physics

    Professor Andrew J Steckl

  169. Chapter 3 Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions

    Article • January 1998, Elsevier

    Professor Andrew J Steckl

  170. Review of focused ion beam implantation mixing for the fabrication of GaAs-based optoelectronic devices

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, November 1995, American Vacuum Society

    Professor Andrew J Steckl

  171. Reduced temperature growth of crystalline 3C-SiC films on 6H-SiC by chemical vapor deposition from silacyclobutane

    Article • Journal of Applied Physics, July 1995, American Institute of Physics

    Professor Andrew J Steckl

  172. GaAs quantum well distributed Bragg reflection laser with AlGaAs/GaAs superlattice gratings fabricated by focused ion beam mixing

    Article • Applied Physics Letters, July 1995, American Institute of Physics

    Professor Andrew J Steckl

  173. Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation

    Article • Journal of Applied Physics, June 1995, American Institute of Physics

    Professor Andrew J Steckl

  174. Stain-etched porous silicon visible light emitting diodes

    Article • Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, May 1995, American Vacuum Society

    Professor Andrew J Steckl

  175. Visible electroluminescence from stain-etched porous Si diodes

    Article • IEEE Electron Device Letters, December 1994, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  176. Characterization of optical channel waveguides formed by FIB induced compositional mixing in AlGaAs MQWs

    Article • Superlattices and Microstructures, June 1994, Elsevier

    Professor Andrew J Steckl

  177. Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutane

    Article • Applied Physics Letters, May 1994, American Institute of Physics

    Professor Andrew J Steckl

  178. SiC Devices for Space Electronics: Phase I - High Voltage, Temperature Hard Contacts

    Article • April 1994, SAE International

    Professor Andrew J Steckl

  179. Selective-area room temperature visible photoluminescence from SiC/Si heterostructures

    Article • Applied Physics Letters, March 1994, American Institute of Physics

    Professor Andrew J Steckl

  180. Measurement of complete Auger electron emission angular distributions from β-SiC films on Si(100)

    Article • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, March 1994, American Vacuum Society

    Professor Andrew J Steckl

  181. SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

    Article • IEEE Transactions on Electron Devices, March 1994, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  182. Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane

    Article • Applied Physics Letters, December 1993, American Institute of Physics

    Professor Andrew J Steckl

  183. Shallow Si p+-n junctions fabricated by focused ion beam Ga+ implantation through thin Ti and TiSi2 layers

    Article • Journal of Applied Physics, August 1993, American Institute of Physics

    Professor Andrew J Steckl

  184. Structural characterization of nanometer SiC films grown on Si

    Article • Applied Physics Letters, June 1993, American Institute of Physics

    Professor Andrew J Steckl

  185. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

    Article • Applied Physics Letters, May 1993, American Institute of Physics

    Professor Andrew J Steckl

  186. Photoluminescence from stain-etched polycrystalline Si thin films

    Article • Applied Physics Letters, April 1993, American Institute of Physics

    Professor Andrew J Steckl

  187. Doping-induced selective area photoluminescence in porous silicon

    Article • Applied Physics Letters, April 1993, American Institute of Physics

    Professor Andrew J Steckl

  188. Optical channel waveguides in AlGaAs multiple-quantum-well structures formed by focused ion-beam-induced compositional mixing

    Article • IEEE Photonics Technology Letters, April 1993, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  189. Rapid thermal annealing effects on Si p/sup +/-n junctions fabricated by low-energy FIB Ga/sup +/ implantation

    Article • IEEE Electron Device Letters, March 1993, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  190. Electrical properties of Si p/sup +/-n junctions for sub-0.25 mu m CMOS fabricated by Ga FIB implantation

    Article • IEEE Transactions on Electron Devices, January 1993, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  191. Electrochemical capacitance-voltage depth profiling of nanometer-scale layers fabricated by Ga+ focused ion beam implantation into silicon

    Article • Applied Physics Letters, August 1992, American Institute of Physics

    Professor Andrew J Steckl

  192. Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon

    Article • Thin Solid Films, August 1992, Elsevier

    Professor Andrew J Steckl

  193. Uniform β-SiC thin-film growth on Si by low pressure rapid thermal chemical vapor deposition

    Article • Applied Physics Letters, April 1992, American Institute of Physics

    Professor Andrew J Steckl

  194. Residue-free reactive ion etching of β-SiC in CHF3/O2 with H2 additive

    Article • Applied Physics Letters, April 1992, American Institute of Physics

    Professor Andrew J Steckl

  195. Localized fabrication of Si nanostructures by focused ion beam implantation

    Article • Applied Physics Letters, April 1992, American Institute of Physics

    Professor Andrew J Steckl

  196. Atomic probe imaging of β-SiC thin films grown on (100) Si

    Article • Applied Physics Letters, March 1992, American Institute of Physics

    Professor Andrew J Steckl

  197. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/

    Article • IEEE Transactions on Electron Devices, January 1992, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  198. Fabrication of sub-micrometer PMOSFETs with sub-100 nm p+-n shallow junctions using group III dual ion implantation

    Article • Solid-State Electronics, April 1990, Elsevier

    Professor Andrew J Steckl

  199. Sub-100-nm p+-n shallow junctions fabricated by group III dual ion implantation and rapid thermal annealing

    Article • Applied Physics Letters, May 1989, American Institute of Physics

    Professor Andrew J Steckl

  200. Si p+-n shallow junction fabrication using on-axis Ga+ implantation

    Article • Applied Physics Letters, June 1988, American Institute of Physics

    Professor Andrew J Steckl

  201. Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt58B42) liquid-metal ion source

    Article • Journal of Applied Physics, February 1988, American Institute of Physics

    Professor Andrew J Steckl

  202. Impact of edge effects on charge-packet-splitting accuracy

    Article • Solid-State Electronics, March 1987, Elsevier

    Professor Andrew J Steckl

  203. Ultralow dose effects in ion-beam induced grafting of polymethylmethacrylate (PMMA)

    Article • Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, January 1987, Elsevier

    Professor Andrew J Steckl

  204. Micromachining of polyimide films with focused ion beams

    Article • Microelectronic Engineering, December 1986, Elsevier

    Professor Andrew J Steckl

  205. Simulation of graded-base bipolar transistor characteristics fabricated with a focused ion beam

    Article • Microelectronic Engineering, December 1986, Elsevier

    Professor Andrew J Steckl

  206. Comparison of N P N transistors fabricated with broad beam and spatial profiling using focused beam ion implantation

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1986, American Vacuum Society

    Professor Andrew J Steckl

  207. The flip-and-shift signal enhancement application for a predictive electron-beam pattern registration model

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1986, American Vacuum Society

    Professor Andrew J Steckl

  208. Optimization of solvent development in radiation induced graft lithography of poly(methylmethacrylate)

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1986, American Vacuum Society

    Professor Andrew J Steckl

  209. Particle-beam fabrication and in situ processing of integrated circuits

    Article • Proceedings of the IEEE, January 1986, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  210. Reactive ion etching of SiC thin films using fluorinated gases

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1986, American Vacuum Society

    Professor Andrew J Steckl

  211. Focused Ga+ beam direct implantation for Si device fabrication

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1985, American Vacuum Society

    Professor Andrew J Steckl

  212. Two-dimensional Haar thinning for data base compaction in Fourier proximity correction for electron beam lithography

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, January 1985, American Vacuum Society

    Professor Andrew J Steckl

  213. Polymethyl methacrylate resist sensitivity enhancement in x-ray lithography by i n s i t u polymerization

    Article • Applied Physics Letters, May 1984, American Institute of Physics

    Professor Andrew J Steckl

  214. An image processing approach to fast, efficient proximity correction for electron beam lithography

    Article • Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena, October 1983, American Vacuum Society

    Professor Andrew J Steckl

  215. Correlation of photoluminescence and symmetry studies with photoexcitation and decay processes of infrared active defects in Si

    Article • Journal of Applied Physics, July 1983, American Institute of Physics

    Professor Andrew J Steckl

  216. Thermal oxidation of niobium silicide thin films

    Article • Journal of Applied Physics, May 1983, American Institute of Physics

    Professor Andrew J Steckl

  217. Characterization of NbSi2 thin films

    Article • Journal of Applied Physics, August 1982, American Institute of Physics

    Professor Andrew J Steckl

  218. Plasma etching of sputtered Mo and MoSi2 thin films in NF3 gas mixtures

    Article • Journal of Applied Physics, August 1982, American Institute of Physics

    Professor Andrew J Steckl

  219. Photoexcitation properties of infrared active defects induced by neutron irradiation in silicon

    Article • Journal of Nuclear Materials, July 1982, Elsevier

    Professor Andrew J Steckl

  220. The effect of annealing on the properties of silicidized molybdenum thin films

    Article • Journal of Applied Physics, October 1981, American Institute of Physics

    Professor Andrew J Steckl

  221. Low temperature recombination lifetime in Si metal oxide semiconductor field effect transistors

    Article • Applied Physics Letters, July 1981, American Institute of Physics

    Professor Andrew J Steckl

  222. Silane silicidation of Mo thin films

    Article • Journal of Applied Physics, November 1980, American Institute of Physics

    Professor Andrew J Steckl

  223. Plasma etching characteristics of sputtered MoSi2 films

    Article • Applied Physics Letters, September 1980, American Institute of Physics

    Professor Andrew J Steckl

  224. The effect of ambient atmosphere in the annealing of indium tin oxide films

    Article • Journal of Applied Physics, July 1980, American Institute of Physics

    Professor Andrew J Steckl

  225. Auger analysis of the PbS-Si heterojunction

    Article • Journal of Electronic Materials, May 1980, Springer Science + Business Media

    Professor Andrew J Steckl

  226. Size effects in MoSi2-gate MOSFET’s

    Article • Applied Physics Letters, February 1980, American Institute of Physics

    Professor Andrew J Steckl

  227. Effect of substrate orientation on the properties of the Si/PbS heterojunction

    Article • Solar Cells, February 1980, Elsevier

    Professor Andrew J Steckl

  228. Structural and compositional properties of the PbS-Si heterojunction

    Article • Journal of Applied Physics, January 1980, American Institute of Physics

    Professor Andrew J Steckl

  229. Direct injection readout of the p-n PbS-Si heterojunction detector

    Article • Applied Physics Letters, October 1979, American Institute of Physics

    Professor Andrew J Steckl

  230. Infrared charge coupled devices

    Article • Infrared Physics, January 1976, Elsevier

    Professor Andrew J Steckl

  231. Infrared optical properties of sputtered In2−x Snx O3−y films

    Article • Infrared Physics, January 1976, Elsevier

    Professor Andrew J Steckl

  232. Application of charge-coupled devices to infrared detection and imaging

    Article • Proceedings of the IEEE, January 1975, Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl

  233. CURRENT OSCILLATIONS IN CADMIUM SULPHIDE WITH OPTICALLY POLISHED PARALLEL SURFACES

    Article • Applied Physics Letters, February 1970, American Institute of Physics

    Professor Andrew J Steckl

  234. Combined excitation emission spectroscopy of Eu-doped GaN

    Article • Institute of Electrical & Electronics Engineers (IEEE)

    Professor Andrew J Steckl