All Stories

  1. Extended wavelength photodiodes in the B-III–V material system

    Article • Applied Physics Letters, October 2025, American Institute of Physics

    Andrew Jones

  2. Cold sintering of hexagonal boron nitride micro flakes

    Article • Surfaces and Interfaces, September 2025, Elsevier

    Andrew Jones

  3. Thermal metrology can be used as a diagnostic technique

    Article • Review of Scientific Instruments, February 2025, American Institute of Physics

    Andrew Jones

  4. Separate absorption, charge, and multiplication staircase avalanche photodiodes

    Article • Applied Physics Letters, February 2024, American Institute of Physics

    Andrew Jones

  5. Near-unity excess noise factor of staircase avalanche photodiodes

    Article • Optica, October 2023, Optical Society of America (OSA)

    Andrew Jones

  6. Demonstration of the AlInAsSb cascaded multiplier avalanche photodiode

    Article • Applied Physics Letters, July 2023, American Institute of Physics

    Joshua Andrew McArthur, Andrew Jones

  7. Author Correction: Multistep staircase avalanche photodiodes with extremely low noise and deterministic amplification

    Article • Nature Precedings, June 2023, Springer Science + Business Media

    Andrew Jones

  8. Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications

    Article • Nature Precedings, May 2023, Springer Science + Business Media

    Andrew Jones

  9. Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

    Article • Journal of Lightwave Technology, September 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  10. AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection

    Article • IEEE Journal of Quantum Electronics, August 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  11. Linear Mode Avalanche Photodiodes With Antimonide Multipliers on InP Substrates

    Article • IEEE Journal of Quantum Electronics, August 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  12. Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range

    Article • Journal of Lightwave Technology, July 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  13. Digital Alloy Staircase Avalanche Photodetectors With Tunneling-Enhanced Gain

    Article • IEEE Journal of Selected Topics in Quantum Electronics, March 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  14. Al0.3InAsSb/Al0.7InAsSb Digital Alloy nBn Photodetectors

    Article • Journal of Lightwave Technology, January 2022, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  15. Room-temperature bandwidth of 2-μm AlInAsSb avalanche photodiodes

    Article • Optics Express, November 2021, Optical Society of America (OSA)

    Andrew Jones

  16. Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26

    Article • Applied Physics Letters, October 2021, American Institute of Physics

    Andrew Jones

  17. Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system

    Article • Applied Physics Letters, July 2021, American Institute of Physics

    Andrew Jones

  18. Comparison and analysis of Al0.7InAsSb avalanche photodiodes with different background doping polarities

    Article • Applied Physics Letters, July 2021, American Institute of Physics

    Andrew Jones

  19. Multistep staircase avalanche photodiodes with extremely low noise and deterministic amplification

    Article • Nature Precedings, May 2021, Springer Science + Business Media

    Andrew Jones

  20. Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates

    Article • Applied Physics Letters, February 2021, American Institute of Physics

    Andrew Jones

  21. Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

    Article • Scientific Reports, October 2020, Springer Science + Business Media

    Andrew Jones

  22. Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications

    Article • Optics Express, August 2020, Optical Society of America (OSA)

    Andrew Jones

  23. Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-μm applications

    Article • Nature Precedings, May 2020, Springer Science + Business Media

    Andrew Jones

  24. Defect characterization of AlInAsSb digital alloy avalanche photodetectors with low frequency noise spectroscopy

    Article • Optics Express, April 2020, Optical Society of America (OSA)

    Andrew Jones

  25. Full band Monte Carlo simulation of AlInAsSb digital alloys

    Article • InfoMat, March 2020, Wiley

    Andrew Jones

  26. Determination of background doping polarity of unintentionally doped semiconductor layers

    Article • Applied Physics Letters, February 2020, American Institute of Physics

    Andrew Jones

  27. Near ultraviolet enhanced 4H-SiC Schottky diode

    Article • Applied Physics Letters, December 2019, American Institute of Physics

    Andrew Jones

  28. High Gain, Low Dark Current Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes

    Article • IEEE Photonics Technology Letters, December 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  29. High-Speed Avalanche Photodiodes With Wide Dynamic Range Performance

    Article • Journal of Lightwave Technology, December 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  30. Investigation of carrier localization in InAs/AlSb type-II superlattice material system

    Article • Applied Physics Letters, November 2019, American Institute of Physics

    Andrew Jones

  31. Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition

    Article • Applied Physics Letters, September 2019, American Institute of Physics

    Andrew Jones

  32. Comparison of Different Period Digital Alloy Al${}_{\text{0.7}}$InAsSb Avalanche Photodiodes

    Article • Journal of Lightwave Technology, July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  33. III-V on silicon avalanche photodiodes by heteroepitaxy

    Article • Optics Letters, July 2019, Optical Society of America (OSA)

    Professor John Edward Bowers, Andrew Jones

  34. Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys

    Article • physica status solidi (RRL) - Rapid Research Letters, June 2019, Wiley

    Andrew Jones

  35. Toward deterministic construction of low noise avalanche photodetector materials

    Article • Applied Physics Letters, September 2018, American Institute of Physics

    Andrew Jones

  36. Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes

    Article • IEEE Photonics Technology Letters, June 2018, Institute of Electrical & Electronics Engineers (IEEE)

    Andrew Jones

  37. Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

    Article • Optics Express, September 2017, Optical Society of America (OSA)

    Andrew Jones

  38. Role of aluminum in red-to-blue color changes in Hydrangea macrophylla sepals

    Article • BioMetals, May 2011, Springer Science + Business Media

    Andrew Jones