All Stories

  1. Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the ballistic regime

    Article • Materials Science in Semiconductor Processing, June 2018, Elsevier

    Mr Amir Hossein Bayani

  2. Simulation of Filed Effect Sensor Based on Graphene Nanoribbon to Detect Toxic NO Gas

    Article • Silicon, April 2018, Springer Science + Business Media

    Mr Amir Hossein Bayani

  3. Effective mass approximation versus full atomistic model to calculate the output characteristics of a gate-all-around germanium nanowire field effect transistor (GAA-GeNW-FET)

    Article • Superlattices and Microstructures, January 2018, Elsevier

    Mr Amir Hossein Bayani

  4. Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas

    Article • Superlattices and Microstructures, May 2017, Elsevier

    Mr Amir Hossein Bayani

  5. Benchmarking Performance of a Gate-All-Around Germanium Nanotube Field Effect Transistor (GAA-GeNTFET) against GAA-CNTFET

    Article • ECS Journal of Solid State Science and Technology, January 2017, The Electrochemical Society

    Mr Amir Hossein Bayani

  6. Simulation Investigation of Siligene Nanoribbon as a Novel Gas Sensor with Strain Engineering: Sensitivity and Selectivity of Current-Voltage Characteristic

    Article • ECS Journal of Solid State Science and Technology, January 2017, The Electrochemical Society

    Mr Amir Hossein Bayani

  7. The effect of concentration of H 2 physisorption on the current–voltage characteristic of armchair BN nanotubes in CNT–BNNT–CNT set

    Article • Pramana, September 2016, Springer Science + Business Media

    Mr Amir Hossein Bayani

  8. Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor

    Article • Superlattices and Microstructures, September 2016, Elsevier

    Mr Amir Hossein Bayani

  9. Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects

    Article • Semiconductor Science and Technology, March 2016, Institute of Physics Publishing

    Mr Amir Hossein Bayani

  10. Influence of the Hydrogen Adsorption to the Optical Properties of Boron Nitride Nanotubes

    Article • Acta Physica Polonica A, March 2016, Institute of Physics, Polish Academy of Sciences

    Mr Amir Hossein Bayani

  11. Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene

    Article • Journal of Computational Electronics, February 2016, Springer Science + Business Media

    Mr Amir Hossein Bayani

  12. CO gas opto-electronic sensor using semiconductor graphene nanoribbons: A first-principles study

    Article • physica status solidi (b), November 2015, Wiley

    Mr Amir Hossein Bayani

  13. The study of the effect of increasing adsorbed hydrogen's atomic percentage on electronic properties of boron-nitride nanotube

    Article • Physica E Low-dimensional Systems and Nanostructures, September 2013, Elsevier

    Mr Amir Hossein Bayani