All Stories

  1. Technological innovation system applicability in developing countries: Insights from Malaysia's gallium nitride technology development
  2. Fixed angle lifting approach: A feasible and effective coating method for preparing long range order polystyrene monolayer with controllable optical property
  3. A Review of Emerging Trends of GaN Power Semiconductor Applications in Onboard Chargers
  4. Crystallinity enhancement of AlN thin films on Si via nucleation layer engineering and ceramic target sputtering
  5. Manipulation of Niobium Dopant concentrations on TiO2 nanotube arrays film via dual-steps electrochemical method for humidity sensor
  6. Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system
  7. Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition
  8. The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode
  9. Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate
  10. Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target
  11. Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells
  12. Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.
  13. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
  14. The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures
  15. Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films
  16. Optical band gap and surface morphology of AlN thin-film sputtered by HiPIMS on glass substrate
  17. INFLUENCE OF ANATASE TITANIUM DIOXIDE NANOTUBE ARRAYS ON HUMIDITY SENSOR SYNTHESIZED BY ELECTROCHEMICAL ANODIZATION
  18. Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)
  19. Aluminium Thin Film Surface Modification via Low-Pressure and Atmospheric-Pressure Argon Plasma Exposure
  20. Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering
  21. Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review
  22. Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112¯2) GaN: Crystal Quality and Surface Morphology Study
  23. Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
  24. Magnesium doped semipolar (11–22) p-type gallium nitride: Impact of dopant concentration variants towards grain size distributions and crystalline quality
  25. Corrigendum to “Enhanced indium adsorption and surface evolution of semi-polar (11–22) LED via a strain periodic alternating superlattice (SPAS-L)” [Mater. Today Commun. 27 (2021) 102441]
  26. Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure
  27. Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique
  28. Author Correction: Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
  29. The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition
  30. Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED
  31. Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma
  32. Enhanced indium adsorption and surface evolution of semi-polar (11–22) LED via a strain periodic alternating superlattice (SPAS-L)
  33. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
  34. Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes
  35. Impact of crystallinity towards the performance of semi-polar (11–22) GaN UV photodetector
  36. Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD
  37. Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties
  38. Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN
  39. The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition
  40. Synthesis of Anatase Titanium Dioxide Nanotube Arrays via Electrochemical Anodization
  41. The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance
  42. Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate
  43. Deposition of AlN Thin Film by High-Power Impulse Magnetron Sputtering with Tilted Sputter Target at Different Working Pressure
  44. Structural properties and surface roughness of heterostructure GaN/AlN on Si (100) substrate
  45. Characterization of Amorphous GaN Thin Films after Conventional Thermal Anneal
  46. MEH-PPV organic material as saturable absorber for Q-switching and mode-locking applications
  47. Fabrication of Deep Green Light Emitting Diode on Bulk Gallium Nitride Substrate
  48. Indium Tin Oxide Coated D-Shape Fiber as a Saturable Absorber for Generating a Dark Pulse Mode-Locked Laser*
  49. Growth of semi-polar (112¯2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method
  50. Indium tin oxide coated D-shape fiber as saturable absorber for passively Q-switched erbium-doped fiber laser
  51. Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment
  52. Mode-locked erbium-doped fiber laser via evanescent field interaction with indium tin oxide
  53. Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED
  54. Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser
  55. Anodization voltage effect on physical properties of anodic TiO2 nanotube arrays film
  56. Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD
  57. Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
  58. Alq 3 saturable absorber for generating Q‐switched pulses in erbium‐doped fiber laser
  59. Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode
  60. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template
  61. Effect of the Bias Voltage on the Polycrystalline a-axis Oriented AlN Thin Films by RF Sputtering
  62. In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow
  63. Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition
  64. Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
  65. Fabrication of InxGa1-xN/GaN Multi-Quantum well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
  66. Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template
  67. Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD
  68. Enhancing the performance of vanadyl phthalocyanine-based humidity sensor by varying the thickness
  69. Nanosecond pulse generation with a gallium nitride saturable absorber
  70. Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology
  71. Creating Energy-Efficient LEDs
  72. Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current
  73. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD
  74. Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD
  75. Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si
  76. Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD
  77. Effect of working power and pressure on plasma properties during the deposition of TiN films in reactive magnetron sputtering plasma measured using Langmuir probe measurement
  78. Thermally Resistive Electrospun Composite Membranes for Low‐Grade Thermal Energy Harvesting
  79. Fabrications of Nanocomposite Gold-Polymer Metamaterials Consisting of Periodic Microcavities with Tunable Optical Properties
  80. Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting
  81. Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells
  82. Development of atmospheric pressure plasma needle jet for sterilization applications
  83. Nitrogen emission in reactive magnetron sputtering plasmas during the deposition of titanium nitride thin film
  84. Synthesis and characterization of InN nanocrystals on glass substrate by plasma assisted reactive evaporation
  85. First-principles calculation of structural, optoelectronic properties of the cubic Al Ga In1 N quaternary alloys matching on AlN substrate, within modified Becke–Johnson (mBJ) exchange potential
  86. High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN
  87. High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly(Vinylidene Fluoride) Membrane
  88. Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD
  89. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications
  90. Effect of Sn dopant concentration on structural and electrical properties of ZnO nanostructures based methane gas sensor
  91. Effect of Dopant Concentration on Electrical and Optical Properties of Sn-Doped ZnO Thin Films Deposited by Sol-Gel Immersion Method
  92. Effect of Various Tin Doping Percentages on the Electrical and Structural Properties of Nanostructured Zinc Oxide Thin Films Deposited Using Sol-Gel Immersion Method for Gas Sensing Application
  93. Electrical and Structural Properties of Nanostructured Tin Doped Zinc Oxide Deposited by Sol-Gel Immersion Method
  94. Structural Properties of Sn-Doped ZnO Thin Films Deposited on Glass Substrate Using Sol-Gel Immersion Method
  95. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN
  96. Structural ordering, morphology and optical properties of amorphous AlxIn1−xN thin films grown by plasma-assisted dual source reactive evaporation
  97. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation
  98. One-pot sol–gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue
  99. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration
  100. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode
  101. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer
  102. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation
  103. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films
  104. Numerical estimation of self-sputtering effect in ionized physical vapor deposition system
  105. Characterization of ITO/Ag and ITO/Ni Bi-Layer Transparent Conductive Electrodes
  106. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB
  107. The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering
  108. Nanostructured Al-doped ZnO-based gas sensor prepared using sol-gel spin-coating method
  109. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering
  110. Post-Annealing Effects on ITO Thin Films RF Sputtered at Different Thicknesses on Si and Glass
  111. Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering
  112. Effects of Growth Temperature on the Structural Properties of Zinc Oxide Nanograins Deposited by RF Magnetron Sputtering
  113. Structural and Optical Properties of Nickel (Ni)/indium Tin Oxide (ITO) Thin-Films Deposited by RF Magnetron Sputtering
  114. Structural and Optical Properties of Nickel-Doped Zinc Oxide Thin Film on Nickel Seed Layer Deposited by RF Magnetron Sputtering Technique
  115. Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber
  116. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes
  117. Effect of Annealing on Surface of Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Measured by Atomic Force Microscopy (AFM)
  118. Effects of Oxygen Gas Composition on Nanocolumnar Zinc Oxide Properties Deposited by RF Magnetron Sputtering
  119. Effects of Pressure Dependence on Nanocolumnar Zinc Oxide Deposited by RF Magnetron Sputtering
  120. Influence of RF Magnetron Sputtering Pressure on the Structural, Optical, and Morphological Properties of Indium Tin Oxide Nanocolumns
  121. Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering
  122. Study of Annealed Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Prepared by RF Magnetron Sputtering
  123. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer
  124. A Study on the Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic Dianhydride (PTCDA) as a Novel N-Type Material in a Thermoelectric Device
  125. Compositional and Structural Characterization of Heterostructure InGaN-Based Light-Emitting Diode by High Resolution X-Ray Diffraction
  126. Electrical and Optical Characterization of Mg Doping in GaN
  127. Investigation of the Geometry Modeling of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) Reactor
  128. Electronic properties and electrical characteristics of modified PEDOT:PSS as a buffer layer in organic solar cell
  129. Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer
  130. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell
  131. InGaN-based blue LED grown on Si(111) substrate
  132. Effect of AlGaN∕GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD
  133. High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD
  134. Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer
  135. Growth of InGaN-based laser diode structure on silicon (111) substrate