All Stories

  1. An InGaN amber nano-light-emitting diode with external quantum efficiency of 10.1%

    Article • Applied Physics Letters, August 2026, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar

  2. A dual optimization strategy of nucleation layer and V/III ratio for defect suppression in a-plane gallium nitride (GaN) on r-plane sapphire

    Article • Materials Science in Semiconductor Processing, August 2026, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  3. The trade-off between electrical performance and structural quality in silicon (n-type) and magnesium (p-type)-doped a-plane gallium nitride (GaN) on r-plane sapphire

    Article • Journal of Materials Science Materials in Electronics, May 2026, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  4. Technological innovation system applicability in developing countries: Insights from Malaysia's gallium nitride technology development

    Article • Journal of Open Innovation Technology Market and Complexity, March 2026, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  5. Fixed angle lifting approach: A feasible and effective coating method for preparing long range order polystyrene monolayer with controllable optical property

    Article • Optical Materials, February 2026, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  6. Polarization-switchable passive harmonic mode-locking with microsecond-scale pulse envelopes in an ultralong-cavity erbium-doped fiber laser

    Article • January 2026, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  7. A Review of Emerging Trends of GaN Power Semiconductor Applications in Onboard Chargers

    Article • Journal of Circuits System and Computers, December 2025, World Scientific Pub Co Pte Lt

    Ahmad Shuhaimi Bin Abu Bakar

  8. Crystallinity enhancement of AlN thin films on Si via nucleation layer engineering and ceramic target sputtering

    Article • Journal of Materials Research and Technology, November 2025, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  9. Manipulation of Niobium Dopant concentrations on TiO2 nanotube arrays film via dual-steps electrochemical method for humidity sensor

    Article • Journal of Porous Materials, September 2025, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  10. Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system

    Article • Ceramics International, November 2024, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  11. Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

    Article • Crystals, April 2024, MDPI AG

    Ahmad Shuhaimi Bin Abu Bakar

  12. The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode

    Article • physica status solidi (b), April 2024, Wiley

    Ahmad Shuhaimi Bin Abu Bakar

  13. Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate

    Article • Materials Science in Semiconductor Processing, April 2024, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  14. Influence of argon/nitrogen sputtering gas and molybdenum/titanium seed layer on aluminium nitride ⟨100⟩ thin film growth using ceramic target

    Article • Journal of Materials Research and Technology, March 2024, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  15. Numerical study on the optimisation of AlGaN-based deep ultra-violet light emitting diodes single quantum wells

    Article • International Journal of Nanotechnology, January 2024, Inderscience Publishers

    Ahmad Shuhaimi Bin Abu Bakar

  16. Influence of Pulse Atomic-Layer Epitaxy (PALE) AlN Buffer Layer on Quality of MOCVD Grown GaN on Si(111) Substrate.

    Article • Surfaces and Interfaces, August 2023, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  17. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

    Article • Scientific Reports, May 2023, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  18. The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures

    Article • Materials Science and Engineering B, May 2023, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  19. Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films

    Article • Scripta Materialia, March 2023, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  20. Optical band gap and surface morphology of AlN thin-film sputtered by HiPIMS on glass substrate

    Article • January 2023, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar, Zulkifli Azman

  21. Rf Sputtering Growth of Zinc Oxide Nanocolumnar Current Spreading Layer for Ultraviolet Light Emitter Devices

    Article • January 2023, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  22. INFLUENCE OF ANATASE TITANIUM DIOXIDE NANOTUBE ARRAYS ON HUMIDITY SENSOR SYNTHESIZED BY ELECTROCHEMICAL ANODIZATION

    Article • Jurnal Teknologi (Sciences & Engineering), October 2022, Penerbit UTM Press

    Ahmad Shuhaimi Bin Abu Bakar

  23. Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)

    Article • Photonics, September 2022, MDPI AG

    Ahmad Shuhaimi Bin Abu Bakar

  24. Aluminium Thin Film Surface Modification via Low-Pressure and Atmospheric-Pressure Argon Plasma Exposure

    Article • Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques, June 2022, Pleiades Publishing Ltd

    Ahmad Shuhaimi Bin Abu Bakar

  25. Electrical and structural comparison of (100) and (002) oriented AlN thin films deposited by RF magnetron sputtering

    Article • Journal of Materials Science Materials in Electronics, April 2022, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  26. Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

    Article • Coatings, February 2022, MDPI AG

    Ahmad Shuhaimi Bin Abu Bakar

  27. Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112¯2) GaN: Crystal Quality and Surface Morphology Study

    Article • Crystals, February 2022, MDPI AG

    Ahmad Shuhaimi Bin Abu Bakar

  28. Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties

    Article • International Journal of Nanotechnology, January 2022, Inderscience Publishers

    Ahmad Shuhaimi Bin Abu Bakar

  29. Magnesium doped semipolar (11–22) p-type gallium nitride: Impact of dopant concentration variants towards grain size distributions and crystalline quality

    Article • Thin Solid Films, January 2022, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  30. Corrigendum to “Enhanced indium adsorption and surface evolution of semi-polar (11–22) LED via a strain periodic alternating superlattice (SPAS-L)” [Mater. Today Commun. 27 (2021) 102441]

    Article • Materials Today Communications, December 2021, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  31. Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure

    Article • Journal of Physical Science, November 2021, Penerbit Universiti Sains Malaysia

    Ahmad Shuhaimi Bin Abu Bakar

  32. Improvement of c-axis (002) AlN crystal plane by temperature assisted HiPIMS technique

    Article • Microelectronics International, August 2021, Emerald

    Ahmad Shuhaimi Bin Abu Bakar

  33. Author Correction: Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

    Article • Scientific Reports, August 2021, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  34. The optimization of n-type and p-type m-plane GaN grown on m-plane sapphire substrate by metal organic chemical vapor deposition

    Article • Materials Science in Semiconductor Processing, August 2021, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  35. Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED

    Article • Microelectronics International, July 2021, Emerald

    Ahmad Shuhaimi Bin Abu Bakar

  36. Structural and mechanical properties of a-axis AlN thin films growth using reactive RF magnetron sputtering plasma

    Article • Microelectronics International, June 2021, Emerald

    Ahmad Shuhaimi Bin Abu Bakar

  37. Enhanced indium adsorption and surface evolution of semi-polar (11–22) LED via a strain periodic alternating superlattice (SPAS-L)

    Article • Materials Today Communications, June 2021, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  38. Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN

    Article • Scientific Reports, May 2021, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  39. Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes

    Article • Optical Materials Express, March 2021, Optical Society of America (OSA)

    Ahmad Shuhaimi Bin Abu Bakar

  40. Impact of crystallinity towards the performance of semi-polar (11–22) GaN UV photodetector

    Article • Materials Letters, March 2021, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  41. Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

    Article • Journal of Electronic Materials, February 2021, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  42. Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties

    Article • Thin Solid Films, February 2021, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  43. Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

    Article • Applied Surface Science, February 2021, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  44. The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition

    Article • Journal of Materials Science Materials in Electronics, January 2021, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  45. Synthesis of Anatase Titanium Dioxide Nanotube Arrays via Electrochemical Anodization

    Article • January 2021, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  46. The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

    Article • Materials Science in Semiconductor Processing, January 2021, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  47. Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate

    Article • Superlattices and Microstructures, December 2020, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  48. Deposition of AlN Thin Film by High-Power Impulse Magnetron Sputtering with Tilted Sputter Target at Different Working Pressure

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  49. Structural properties and surface roughness of heterostructure GaN/AlN on Si (100) substrate

    Article • September 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  50. Characterization of Amorphous GaN Thin Films after Conventional Thermal Anneal

    Article • July 2020, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  51. MEH-PPV organic material as saturable absorber for Q-switching and mode-locking applications

    Article • Journal of Modern Optics, May 2020, Taylor & Francis

    Ahmad Shuhaimi Bin Abu Bakar

  52. Fabrication of Deep Green Light Emitting Diode on Bulk Gallium Nitride Substrate

    Article • Journal of Physics Conference Series, May 2020, Institute of Physics Publishing

    Ahmad Shuhaimi Bin Abu Bakar

  53. Indium Tin Oxide Coated D-Shape Fiber as a Saturable Absorber for Generating a Dark Pulse Mode-Locked Laser*

    Article • Chinese Physics Letters, May 2020, Institute of Physics Publishing

    Ahmad Shuhaimi Bin Abu Bakar

  54. Growth of semi-polar (112¯2) GaN on m-plane sapphire via In-Situ Multiple Ammonia Treatment (I-SMAT) method

    Article • Vacuum, April 2020, Elsevier

    Omar Al-Zuhairi, Ahmad Shuhaimi Bin Abu Bakar

  55. Indium tin oxide coated D-shape fiber as saturable absorber for passively Q-switched erbium-doped fiber laser

    Article • Optics & Laser Technology, April 2020, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  56. Crystal quality and surface structure tuning of semi-polar (11–22) GaN on m-plane sapphire via in-situ multiple ammonia treatment

    Article • Thin Solid Films, March 2020, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  57. Mode-locked erbium-doped fiber laser via evanescent field interaction with indium tin oxide

    Article • Optical Fiber Technology, March 2020, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  58. Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED

    Article • Materials Science in Semiconductor Processing, February 2020, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  59. Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) thin film as saturable absorber for passively Q-switched and mode-locked Erbium-doped fiber laser

    Article • Optical Fiber Technology, January 2020, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  60. Anodization voltage effect on physical properties of anodic TiO2 nanotube arrays film

    Article • January 2020, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar

  61. Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD

    Article • CrystEngComm, January 2020, Royal Society of Chemistry

    Ahmad Shuhaimi Bin Abu Bakar

  62. Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN

    Article • Materials Science in Semiconductor Processing, January 2020, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  63. Alq 3 saturable absorber for generating Q‐switched pulses in erbium‐doped fiber laser

    Article • Microwave and Optical Technology Letters, November 2019, Wiley

    Ahmad Shuhaimi Bin Abu Bakar

  64. Solution-Processable Vertical Organic Light-Emitting Transistors (VOLETs) with Directly Deposited Silver Nanowires Intermediate Source Electrode

    Article • Journal of Nanoscience and Nanotechnology, November 2019, American Scientific Publishers

    Ahmad Shuhaimi Bin Abu Bakar

  65. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template

    Article • Crystal Growth & Design, September 2019, American Chemical Society (ACS)

    Ahmad Shuhaimi Bin Abu Bakar

  66. Effect of the Bias Voltage on the Polycrystalline a-axis Oriented AlN Thin Films by RF Sputtering

    Article • July 2019, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  67. In-situ tuning of Sn doped In2O3 (ITO) films properties by controlling deposition Argon/Oxygen flow

    Article • Applied Surface Science, June 2019, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  68. Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition

    Article • Japanese Journal of Applied Physics, May 2019, Japan Society of Applied Physics

    Ahmad Shuhaimi Bin Abu Bakar

  69. Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate

    Article • Materials Research Express, May 2019, Institute of Physics Publishing

    Ahmad Shuhaimi Bin Abu Bakar

  70. Fabrication of InxGa1-xN/GaN Multi-Quantum well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

    Article • Solid State Phenomena, April 2019, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  71. Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template

    Article • Journal of Electronic Materials, March 2019, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  72. Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD

    Article • CrystEngComm, January 2019, Royal Society of Chemistry

    Ahmad Shuhaimi Bin Abu Bakar

  73. Enhancing the performance of vanadyl phthalocyanine-based humidity sensor by varying the thickness

    Article • Sensors and Actuators B Chemical, January 2019, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  74. Nanosecond pulse generation with a gallium nitride saturable absorber

    Article • OSA Continuum, December 2018, Optical Society of America (OSA)

    Ahmad Shuhaimi Bin Abu Bakar

  75. Metal organic chemical vapor deposition of m-plane GaN epi-layer using a three-step approach towards enhanced surface morphology

    Article • Thin Solid Films, December 2018, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar, Omar Al-Zuhairi

  76. Creating Energy-Efficient LEDs

    Article • Materials Science in Semiconductor Processing, November 2018, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar, Omar Al-Zuhairi

  77. Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current

    Article • Current Applied Physics, November 2018, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  78. Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD

    Article • Superlattices and Microstructures, August 2018, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  79. Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

    Article • Superlattices and Microstructures, July 2018, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  80. Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

    Article • Applied Surface Science, June 2018, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  81. Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

    Article • Superlattices and Microstructures, May 2018, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  82. Effect of working power and pressure on plasma properties during the deposition of TiN films in reactive magnetron sputtering plasma measured using Langmuir probe measurement

    Article • Journal of Physics Conference Series, April 2018, Institute of Physics Publishing

    Ahmad Shuhaimi Bin Abu Bakar

  83. Thermally Resistive Electrospun Composite Membranes for Low‐Grade Thermal Energy Harvesting

    Article • Macromolecular Materials and Engineering, January 2018, Wiley

    Ahmad Shuhaimi Bin Abu Bakar

  84. Fabrications of Nanocomposite Gold-Polymer Metamaterials Consisting of Periodic Microcavities with Tunable Optical Properties

    Article • Optik, December 2017, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  85. Correlation between indium content in monolithic InGaN/GaN multi quantum well structures on photoelectrochemical activity for water splitting

    Article • Journal of Alloys and Compounds, June 2017, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  86. Optimization of poly(vinylidene fluoride) membranes for enhanced power density of thermally driven electrochemical cells

    Article • Journal of Materials Science, May 2017, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  87. Development of atmospheric pressure plasma needle jet for sterilization applications

    Article • January 2017, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar

  88. Nitrogen emission in reactive magnetron sputtering plasmas during the deposition of titanium nitride thin film

    Article • January 2017, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar

  89. Synthesis and characterization of InN nanocrystals on glass substrate by plasma assisted reactive evaporation

    Article • January 2017, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar

  90. First-principles calculation of structural, optoelectronic properties of the cubic Al Ga In1 N quaternary alloys matching on AlN substrate, within modified Becke–Johnson (mBJ) exchange potential

    Article • Optik, December 2016, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  91. High figure of merit of the post-annealed Ti/Al/ITO transparent conductive contacts sputter deposited on n-GaN

    Article • Journal of Alloys and Compounds, October 2016, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  92. High Thermal Gradient in Thermo-electrochemical Cells by Insertion of a Poly(Vinylidene Fluoride) Membrane

    Article • Scientific Reports, July 2016, Nature

    Ahmad Shuhaimi Bin Abu Bakar

  93. Effect of nitridation surface treatment on silicon (1 1 1) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD

    Article • Applied Surface Science, January 2016, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  94. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Article • January 2016, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar

  95. Effect of Sn dopant concentration on structural and electrical properties of ZnO nanostructures based methane gas sensor

    Article • December 2015, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  96. Effect of Dopant Concentration on Electrical and Optical Properties of Sn-Doped ZnO Thin Films Deposited by Sol-Gel Immersion Method

    Article • Advanced Materials Research, June 2015, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  97. Effect of Various Tin Doping Percentages on the Electrical and Structural Properties of Nanostructured Zinc Oxide Thin Films Deposited Using Sol-Gel Immersion Method for Gas Sensing Application

    Article • Advanced Materials Research, June 2015, Trans Tech Publications

    Ishak Saurdi, Ahmad Shuhaimi Bin Abu Bakar

  98. Electrical and Structural Properties of Nanostructured Tin Doped Zinc Oxide Deposited by Sol-Gel Immersion Method

    Article • Advanced Materials Research, June 2015, Trans Tech Publications

    Ishak Saurdi, Ahmad Shuhaimi Bin Abu Bakar

  99. Structural Properties of Sn-Doped ZnO Thin Films Deposited on Glass Substrate Using Sol-Gel Immersion Method

    Article • Advanced Materials Research, June 2015, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  100. Effect of using two-step thermal annealing with different ambient gas on Mg activation and crystalline quality in GaN

    Article • Superlattices and Microstructures, June 2015, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  101. Structural ordering, morphology and optical properties of amorphous AlxIn1−xN thin films grown by plasma-assisted dual source reactive evaporation

    Article • Journal of Alloys and Compounds, May 2015, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  102. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Dr Alagarsamy Pandikumar, Ahmad Shuhaimi Bin Abu Bakar

  103. One-pot sol–gel synthesis of reduced graphene oxide uniformly decorated zinc oxide nanoparticles in starch environment for highly efficient photodegradation of Methylene Blue

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Dr Ramin Yousefi, Ahmad Shuhaimi Bin Abu Bakar

  104. Crystalline quality assessment, photocurrent response and optical properties of reduced graphene oxide uniformly decorated zinc oxide nanoparticles based on the graphene oxide concentration

    Article • RSC Advances, January 2015, Royal Society of Chemistry

    Ahmad Shuhaimi Bin Abu Bakar

  105. Nanocolumnar zinc oxide as a transparent conductive oxide film for a blue InGaN-based light emitting diode

    Article • Ceramics International, January 2015, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  106. Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer

    Article • Applied Surface Science, October 2014, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  107. Effects of graphene oxide concentration on optical properties of ZnO/RGO nanocomposites and their application to photocurrent generation

    Article • Journal of Applied Physics, August 2014, American Institute of Physics

    Dr Ramin Yousefi, Ahmad Shuhaimi Bin Abu Bakar

  108. Plasma-assisted hot filament chemical vapor deposition of AlN thin films on ZnO buffer layer: toward highly c-axis-oriented, uniform, insulative films

    Article • Applied Physics A, August 2014, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  109. Numerical estimation of self-sputtering effect in ionized physical vapor deposition system

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  110. Characterization of ITO/Ag and ITO/Ni Bi-Layer Transparent Conductive Electrodes

    Article • Advanced Materials Research, August 2014, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  111. Synthesis and characterization of ZnO NPs/reduced graphene oxide nanocomposite prepared in gelatin medium as highly efficient photo-degradation of MB

    Article • Ceramics International, August 2014, Elsevier

    Dr Ramin Yousefi, Ahmad Shuhaimi Bin Abu Bakar

  112. The effect of sputtering pressure on structural, optical and electrical properties of indium tin oxide nanocolumns prepared by radio frequency (RF) magnetron sputtering

    Article • Superlattices and Microstructures, August 2014, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  113. Nanostructured Al-doped ZnO-based gas sensor prepared using sol-gel spin-coating method

    Article • August 2014, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  114. Effect of annealing on structural, optical, and electrical properties of nickel (Ni)/indium tin oxide (ITO) nanostructures prepared by RF magnetron sputtering

    Article • Superlattices and Microstructures, June 2014, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  115. Post-Annealing Effects on ITO Thin Films RF Sputtered at Different Thicknesses on Si and Glass

    Article • Advanced Materials Research, April 2014, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  116. Effect of Substrate Temperature on Structural and Morphological Properties of Indium Tin Oxide Nanocolumns Using RF Magnetron Sputtering

    Article • Advanced Materials Research, February 2014, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  117. Effects of Growth Temperature on the Structural Properties of Zinc Oxide Nanograins Deposited by RF Magnetron Sputtering

    Article • Advanced Materials Research, February 2014, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  118. Structural and Optical Properties of Nickel (Ni)/indium Tin Oxide (ITO) Thin-Films Deposited by RF Magnetron Sputtering

    Article • Advanced Materials Research, February 2014, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  119. Structural and Optical Properties of Nickel-Doped Zinc Oxide Thin Film on Nickel Seed Layer Deposited by RF Magnetron Sputtering Technique

    Article • Advanced Materials Research, February 2014, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  120. Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber

    Article • Microsystem Technologies, January 2014, Springer Science + Business Media

    Ahmad Shuhaimi Bin Abu Bakar

  121. Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

    Article • Applied Surface Science, January 2014, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  122. Effect of Annealing on Surface of Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Measured by Atomic Force Microscopy (AFM)

    Article • Advanced Materials Research, November 2013, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  123. Effects of Oxygen Gas Composition on Nanocolumnar Zinc Oxide Properties Deposited by RF Magnetron Sputtering

    Article • Advanced Materials Research, November 2013, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  124. Effects of Pressure Dependence on Nanocolumnar Zinc Oxide Deposited by RF Magnetron Sputtering

    Article • Advanced Materials Research, November 2013, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  125. Influence of RF Magnetron Sputtering Pressure on the Structural, Optical, and Morphological Properties of Indium Tin Oxide Nanocolumns

    Article • Advanced Materials Research, November 2013, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  126. Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

    Article • Advanced Materials Research, November 2013, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  127. Study of Annealed Nickel (Ni)/Indium Tin Oxide (ITO) Nanostructures Prepared by RF Magnetron Sputtering

    Article • Advanced Materials Research, November 2013, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  128. InGaN-based multi-quantum well light-emitting diode structure with the insertion of superlattices under-layer

    Article • Superlattices and Microstructures, August 2013, Elsevier

    Ahmad Shuhaimi Bin Abu Bakar

  129. A Study on the Seebeck Effect of 3,4,9,10-Perylenetetracarboxylic Dianhydride (PTCDA) as a Novel N-Type Material in a Thermoelectric Device

    Article • Advanced Materials Research, March 2013, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  130. Compositional and Structural Characterization of Heterostructure InGaN-Based Light-Emitting Diode by High Resolution X-Ray Diffraction

    Article • Advanced Materials Research, December 2012, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  131. Electrical and Optical Characterization of Mg Doping in GaN

    Article • Advanced Materials Research, December 2012, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  132. Investigation of the Geometry Modeling of Metal Organic Halide Vapor Phase Epitaxy (MOHVPE) Reactor

    Article • Advanced Materials Research, December 2012, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  133. Electronic properties and electrical characteristics of modified PEDOT:PSS as a buffer layer in organic solar cell

    Article • November 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  134. Structural properties of InGaN-based light-emitting diode epitaxial growth on Si (111) with AlN/InGaN buffer layer

    Article • October 2012, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  135. PEDOT:PSS Thin Film as Transparent Electrode in ITO-Free Organic Solar Cell

    Article • Advanced Materials Research, April 2012, Trans Tech Publications

    Ahmad Shuhaimi Bin Abu Bakar

  136. InGaN-based blue LED grown on Si(111) substrate

    Article • September 2011, Institute of Electrical & Electronics Engineers (IEEE)

    Ahmad Shuhaimi Bin Abu Bakar

  137. Effect of AlGaN∕GaN Strained-Layer Superlattices Underlayer to InGaN-based Multi-Quantum Wells Grown on Si(111) Substrate by MOCVD

    Article • January 2011, American Institute of Physics

    Ahmad Shuhaimi Bin Abu Bakar

  138. High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

    Article • Journal of Physics D Applied Physics, August 2010, Institute of Physics Publishing

    Ahmad Shuhaimi Bin Abu Bakar

  139. Effect of Al0.06Ga0.94N/GaN Strained-Layer Superlattices Cladding Underlayer to InGaN-Based Multi-Quantum Well Grown on Si(111) Substrate with AlN/GaN Intermediate Layer

    Article • Japanese Journal of Applied Physics, February 2010, Japan Society of Applied Physics

    Ahmad Shuhaimi Bin Abu Bakar

  140. Growth of InGaN-based laser diode structure on silicon (111) substrate

    Article • Journal of Physics Conference Series, March 2009, Institute of Physics Publishing

    Ahmad Shuhaimi Bin Abu Bakar