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  1. Non-stoichiometric GaAs - prospective material for compact THz emitters

    Article • Electronics Letters, October 2016, the Institution of Engineering and Technology (the IET)

    Arunas Krotkus, Renata Butkutė, Virginijus Bukauskas, Ramūnas Adomavičius

  2. Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth

    Article • Electronics Letters, July 2014, the Institution of Engineering and Technology (the IET)

    Renata Butkutė