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  1. Round-robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

    Article • Surface and Interface Analysis, July 2017, Wiley

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  2. Development of a Certified Reference Material with Delta-Doped Boron Nitride Layers for Surface Depth-Profile Analysis

    Article • e-Journal of Surface Science and Nanotechnology, January 2016, Surface Science Society Japan

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  3. Final report on VAMAS round-robin study to evaluate a correction method for saturation effects in DSIMS

    Article • Surface and Interface Analysis, April 2015, Wiley

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  4. VAMAS round-robin study to evaluate a correction method for saturation effects in D-SIMS

    Article • Surface and Interface Analysis, May 2014, Wiley

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  5. Comparison of a new dead-time correction method and conventional models for SIMS analysis

    Article • Surface and Interface Analysis, April 2012, Wiley

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  6. AFM Tip Characterizer fabricated by Si/SiO2 multilayers

    Article • e-Journal of Surface Science and Nanotechnology, January 2011, Surface Science Society Japan

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  7. Development of Si/SiO2 Multilayer Type AFM Tip Characterizers

    Article • Journal of Surface Analysis, January 2011, Surface Analysis Society of Japan

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  8. Evaluation of the dead time of the detector on SIMS

    Article • Applied Surface Science, December 2008, Elsevier

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  9. Silicon isotope superlattices: Ideal SIMS standards for shallow junction characterization

    Article • Applied Surface Science, December 2008, Elsevier

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  10. Evaluation of sputtering rate change in the silicon transient region under medium energy O2+ sputtering

    Article • Applied Surface Science, December 2008, Elsevier

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  11. Film thickness determining method of the silicon isotope superlattices by SIMS

    Article • Applied Surface Science, December 2008, Elsevier

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  12. Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices

    Article • Applied Physics Express, January 2008, Institute of Physics Publishing

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  13. Simultaneous observation of the behavior of impurities and silicon atoms in silicon isotope superlattices

    Article • Physica B Condensed Matter, December 2007, Elsevier

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  14. Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test

    Article • Applied Surface Science, June 2004, Elsevier

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  15. SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beams

    Article • Applied Surface Science, January 2003, Elsevier

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  16. Evaluation of SIMS depth resolution using delta-doped multilayers and mixing–roughness-information depth model

    Article • Applied Surface Science, January 2003, Elsevier

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  17. Evaluation of the sputtering rate variation in SIMS ultra-shallow depth profiling using multiple short-period delta layers

    Article • Surface and Interface Analysis, January 2003, Wiley

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  18. Observation of ripple formation on O2+-irradiated GaN surfaces using atomic force microscopy

    Article • Applied Surface Science, January 2003, Elsevier

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  19. Oxygen-ion-induced ripple formation on silicon: evidence for phase separation and tentative model

    Article • Applied Surface Science, January 2003, Elsevier

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  20. Evaluation of SIMS Depth Profiles Using a Depth Resolution Function.

    Article • Journal of The Surface Finishing Society of Japan, January 2002, The Surface Finishing Society of Japan

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  21. Observation of the oxygen-ion image on AIN ceramics by SIMS.

    Article • BUNSEKI KAGAKU, January 1991, Japan Society for Analytical Chemistry

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  22. Investigation on SIMS Quantification of Major Elements of CdxHg1-xTe(CMT).

    Article • Hyomen Kagaku, January 1991, Surface Science Society Japan

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  23. Effect of a field-limiting method in a micro-area analysis by SIMS.

    Article • BUNSEKI KAGAKU, January 1991, Japan Society for Analytical Chemistry

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